Order this document by MRF557/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. * Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60% (Typ) 1.5 W, 870 MHz RF LOW POWER TRANSISTOR NPN SILICON * Cost Effective PowerMacro Package * Electroless Tin Plated Leads for Improved Solderability * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 16 Vdc Collector-Base Voltage VCBO 36 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector Current -- Continuous IC 400 mAdc Total Device Dissipation @ TC = 75C (1, 2) Derate above 75C PD 3.0 40 Watts mW/C Storage Temperature Range Tstg - 55 to +150 C CASE 317D-02, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 25 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 16 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 36 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 4.0 -- -- Vdc ICES -- -- 0.1 mAdc hFE 50 90 200 -- Cob -- 3.5 5.0 pF Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25C) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) NOTES: (continued) 1. TC, Case temperature measured on collector lead immediately adjacent to body of package. 2. The MRF557 PowerMacro must be properly mounted for reliable operation. AN938, "Mounting Techniques in PowerMacro Transistor," discusses methods of mounting and heatsinking. REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF557 1 ELECTRICAL CHARACTERISTICS -- continued (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 1.5 W, f = 870 MHz) Figures 1, 2 Gpe 8.0 9.0 -- dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 1.5 W, f = 870 MHz) Figures 1, 2 c 55 60 -- % Load Mismatch Stress (VCC = 15.5 Vdc, Pin = 225 mW, f = 870 MHz, VSWR 10:1 all phase angles) Figures 1, 2 No Degradation in Output Power L5 + C8 B B + C9 VCC C10 - L1 L4 C6 L3 Z3 RF POWER INPUT Z4 L2 RF POWER OUTPUT Z2 Z1 C3 C1 C4 D.U.T. C5 C7 C2 C1, C2, C5, C7 -- 0.8 - 8.0 pF Johanson Gigatrim* C3, C4 -- 15 pF Clamped Mica, Mini-Underwood C6 -- 27 pF Clamped Mica, Mini-Underwood C8 -- 91 pF Clamped Mica, Mini-Underwood C9 -- 68 pF Clamped Mica, Mini-Underwood C10 -- 1.0 F, 25 V Tantalum B -- Bead, Ferroxcube 56-590-65/3B PCB -- 1/16 Glass Teflon, r = 2.56 L1, L4 -- 5 Turns #21 AWG, 5/32 ID L2, L3 -- 60 x 125 x 250 Mils Copper Tab on L2, L3 -- 27 Mil Thick Alumina Substrate L5 -- 7 Turns #21 AWG, 5/32 ID Z1 -- 1.65 x 0.163 Microstrip, Zo = 50 Z2 -- 0.85 x 0.163 Microstrip, Zo = 50 Z3 -- 0.625 x 0.163 Microstrip, Zo = 50 Z4 -- 1.35 x 0.163 Microstrip, Zo = 50 *Fixed tuned for broadband response. Figure 1. 800 - 880 MHz Broadband Circuit MRF557 2 MOTOROLA RF DEVICE DATA 80 70 c 12 IRL, INPUT RETURN LOSS (dB) G pe , POWER GAIN (dB) 14 Gpe 10 8 6 4 IRL 2 0 800 820 840 860 f, FREQUENCY (MHz) 60 50 5 40 10 30 15 20 20 10 c , COLLECTOR EFFICIENCY (%) 16 0 900 880 Figure 2. Performance in Broadband Circuit Zin Ohms VCC = 7.5 V ZOL* Ohms VCC = 12.5 V VCC = 7.5 V VCC = 12.5 V Pout 806 MHz = 2.1 W Pout 870 MHz = 1.8 W Pout 960 MHz = 1.1 W f Frequency MHz Pin = 300 mW Pin = 200 mW Pout 806 MHz = 1.7 W Pout 870 MHz = 1.4 W Pout 960 MHz = 1.0 W 806 2.4 + j3.9 2.4 + j3.1 14.7 - j4.4 13.6 - j12.8 870 2.5 + j4.6 2.7 + j3.7 17.2 - j8.6 16 - j13.2 960 6.1 + j7.4 6.8 + j8.3 40 - j8.3 38 - j10.5 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Table 1. Zin and ZOL versus Collector Voltage, Input Power and Output Power MOTOROLA RF DEVICE DATA MRF557 3 2.5 Pout , POWER OUTPUT (WATTS) Pout , POWER OUTPUT (WATTS) 2.5 VCC = 12.5 Vdc 2 1.5 7.5 Vdc 1 0.5 VCC = 7.5 Vdc 2 Pin = 300 mW 1.5 200 mW 1 100 mW 0.5 f = 870 MHz 0 0 100 200 Pin, POWER INPUT (mW) 300 0 800 400 Figure 3. Power Output versus Power Input 820 840 860 880 900 f, FREQUENCY (MHz) 920 940 960 Figure 4. Power Output versus Frequency 2.5 4 Pout , POWER OUTPUT (WATTS) Pout , POWER OUTPUT (WATTS) Pin = 300 mW 2 200 mW 1.5 100 mW 1 0.5 f = 806 MHz 3 Pin = 300 mW 200 mW 2 100 mW 1 VCC = 12.5 Vdc 0 0 800 820 840 860 880 900 f, FREQUENCY (MHz) 920 940 960 6 Figure 5. Power Output versus Frequency 10 12 VCC, SUPPLY VOLTAGE (VOLTS) 14 16 Figure 6. Power Output versus Supply Voltage 4 Pout , POWER OUTPUT (WATTS) 4 Pout , POWER OUTPUT (WATTS) 8 f = 870 MHz 3 Pin = 300 mW 200 mW 2 100 mW 1 0 f = 960 MHz 3 Pin = 300 mW 2 200 mW 1 100 mW 0 6 8 10 12 VCC, SUPPLY VOLTAGE (VOLTS) 14 Figure 7. Power Output versus Supply Voltage MRF557 4 16 6 8 10 12 14 VCC, SUPPLY VOLTAGE (VOLTS) 16 Figure 8. Power Output versus Supply Voltage MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F H R 1 A 4 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION N AND R. 3 D K N T SEATING PLANE C DIM A C D F H J K N R T INCHES MIN MAX 0.175 0.205 0.075 0.100 0.033 0.039 0.097 0.104 0.348 0.383 0.008 0.012 0.285 0.320 --- 0.065 --- 0.128 0.025 0.040 MILLIMETERS MIN MAX 4.45 5.20 1.91 2.54 0.84 0.99 2.46 2.64 8.84 9.72 0.24 0.30 7.24 8.12 --- 1.65 --- 3.25 0.64 1.01 J STYLE 2: PIN 1. 2. 3. 4. COLLECTOR EMITTER BASE EMITTER CASE 317D-02 ISSUE C MOTOROLA RF DEVICE DATA MRF557 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF557 6 *MRF557/D* MRF557/D MOTOROLA RF DEVICE DATA