Ordering number:EN3961A FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions * Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting. * The FP102 is formed with 2chips, one being equivalent to the 2SB1396 and the other the SB07-03C, placed in one package. unit:mm 2088A [FP102] 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO -15 V Collector-to-Emitter Voltage VCEO -11 V Emitter-to-Base Voltage VEBO IC -7 V -3 A Collector Current (Pulse) ICP -5 A Base Current IB PC Tj Collector Current Collector Dissipation Junction Temperature -600 Mounted on ceramic board (250mm2x0.8mm) mA 1.3 W 150 C VRRM VRSM 30 V 35 V IO 700 mA [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current IFSM Junction Temperature Tj Storage Temperature Tstg 50Hz sine wave, 1cycle 5 A -55 to +125 C -55 to +125 C Continued on next page. Marking:102 Electrical Connection 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/62094MT (KOTO) AX-8060 No.3961-1/4 FP102 Continued from preceding page. Electrical Characteristics at Ta=25C Parameter Symbol Conditons Ratings min typ max Unit [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE1 hFE2 Gain-Bandwidth Product Output Capacitance fT Cob VCB=-12V, IE=0 VEB=-6V, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-3A VCE=-2V, IC=-0.3A 140 -0.1 A -0.1 A 560 70 400 VCB=-10V, f=1MHz MHz 26 pF C-E Saturation Voltage VCE(sat) IC=-1.5A, IB=-30mA -0.22 -0.4 V B-E Saturation Voltage VBE(sat) IC=-1.5A, IB=-30mA -0.9 -1.2 V C-B Breakdown Voltage V(BR)CBO IC=-10A, IE=0 -15 V C-E Breakdown Voltage V(BR)CEO IC=-1mA, RBE= V(BR)EBO IE=-10A, IC=0 -11 V E-B Breakdown Voltage -7 V Turn-ON Time ton See specified Test Circuit 25 ns Storage Time tstg See specified Test Circuit 200 ns tf See specified Test Circuit 10 ns Fall Time [SBD] VR VF IR=300A Forward Voltage Reverse Voltage Reverse Current IR VR=15V Interterminal Capacitance C Reverse Recovery Time trr VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit Thermal Resistance Rthj-a 30 V IF=700mA Mounted on ceramic board (250mm2x0.8mm) 0.55 V 80 A 28 pF 10 120 ns C/W Switching Time Test Circuit (TR) (SBD) No.3961-2/4 FP102 No.3961-3/4 FP102 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3961-4/4