APTC90H12SCTG
APTC90H12SCTG – Rev 1 September, 2009
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6
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.4
0.8
1.2
1.6
2
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
5
10
15
20
00.511.522.533.5
V
F
Forward Voltage (V)
I
F
Forward Current (A)
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
25
50
75
100
400 600 800 1000 1200 1400 1600
V
R
Reverse Vo l t ag e (V )
I
R
Reverse Current (µA)
Capacita n ce vs.Reverse V o ltage
0
100
200
300
400
500
600
700
1 10 100 1000
V
R
Reverse Voltage
C, Capacitance (pF)
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