BC856W ... BC859W
BC856W ... BC85 9W
PNP Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransisto ren für di e Oberflächenmontage PNP
Version 2006-06-27
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Power dissipation – Verlustleistung 200 mW
Plastic case
Kunststoffgehäuse
SOT-323
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
BC856W BC857W BC858W
BC859W
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCBO 65 V 45 V 30 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCEO 80 V 50 V 30 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 200 mW 1)
Collector current – Kollektorstrom (dc) - IC100 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Peak Emitter current – Emitter-Spitzenstrom IEM 200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA Group A
Group B
Group C
hFE
hFE
hFE
–
–
–
140
250
480
–
–
–
- VCE = 5 V, - IC = 2 mA Group A
Group B
Group C
hFE
hFE
hFE
125
220
420
180
290
520
250
475
800
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- VCEsat
- VCEsat
–
–
75 mV
250 mV
300 mV
650 mV
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
1.3
0.3
1.25
±0.1
1
±0.1
2
±0.1
2.1
±0.1
Type
Code
3
21
BC856W ... BC859W
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- VBEsat
- VBEsat
–
–
700 mV
850 mV
–
–
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA
- VBE
- VBE
600 mV
–
650 mV
–
750 mV
820 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCE = 30 V, Tj = 125°C, (E open)
- ICB0
- ICB0
–
–
–
–
15 nA
5 µA
Emitter-Base cutoff current
- VEB = 5 V, (C open) - IEB0 – – 100 nA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz fT100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – – 4.5 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 – 10 pF 15 pF
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC856W ... BC858W
BC859W
F
F
–
–
–
1 dB
10 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 620 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BC846W ... BC849W
Marking of available current gain
groups per type
Stempelung der lieferbare Stromverstärkungs-
gruppen pro Typ
BC856AW = 3A
BC857AW = 3E
BC858AW = 3J
BC856BW = 3B
BC857BW = 3F
BC858BW = 3K
BC859BW = 4B
BC857CW = 3G
BC858CW = 3L
BC859CW = 4C
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
