MBR870L thru MBR8100L Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C(TAB) A=Anode, C=Cathode, TAB=Cathode MBR870L MBR880L MBR890L MBR8100L VRRM V 70 80 90 100 VRMS V 49 56 63 70 Symbol VDC V 70 80 90 100 Characteristics 8 A 230 A 10000 V/us IF=8A @TJ=25oC IF=8A @TJ=125oC 0.72 0.58 V @TJ=25oC @TJ=125oC 0.55 7 mA @TC=125oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) IR Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) 2.0 CJ Typical Junction Capacitance (Note 3) 280 TJ Operating Temperature Range ROJC TSTG Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Unit Maximum Average Forward Rectified Current VF Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Maximum Ratings I(AV) dv/dt Dim. Storage Temperature Range o C/W pF -55 to +150 o -55 to +175 o NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES MECHANICAL DATA * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any C C MBR870L thru MBR8100L Wide Temperature Range and High Tjm Schottky Barrier Rectifiers 8 6 4 2 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 10 300 250 200 150 100 50 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 175 1 2 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 10 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 1000 INSTANTANEOUS FORWARD CURRENT ,(A) 100 100 10 TJ = 125 C 1.0 TJ = 75 C 0.1 10 1.0 TJ = 25 C PULSE WIDTH 300us 300ua 2% Duty cycle TJ = 25 C 0.01 0.1 0 20 40 60 80 100 140 120 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 1000 TJ = 25 C, f= 1MHz 100 0.1 1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 5 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.0