NPN POWER TRANSISTORS These general-purpose medium-power transistors are in- tended for a wide variety of medium-power switching and amplifier applications, such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. Features: Low saturation voltages Thermal-cycling ratings Maximum safe-area-of-operation curves specified for dc operation. maximum ratings (T, = 25C) (unless otherwise specified) 2N6292 70 VOLTS 7 AMP, 40 WATTS NPN COLLECTOR BASE EMITTER CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 116(2.95, 404(10.26) 378) ! 1190(4.83)| 380(0.65) | 708.32 fa 056( 1.39, c 4 moe iat t a- co .265(6,73) t "245(6.22) . CASE TEMPERATURE ; REFERENCE /- POINT .355(9.02) a 145(3.68) 5) + 1325(8.25) -141(3.58) r .220(5.59) , .006(0.15 | H 3013.3) Holle 20810 ) TERM.1 .600(12.7)MIN. TERM.2 9551.99 x 1. TERM.3 ___._____ 033 (0.84) } ~,105(2.67 Ly | -107(2.72) .027(0.68) :095(2.41} 087{2.21} 055(1,39)__ ro 2210(5.33 2110.53) 045(7.74) -190(4.82} 075(0-38) [tee |ternm.1 | TERM.2 | TERM3 | TAB | (To-220-aB | BASE | COLLECTOR | emrTTeR | COLLECTOR | RATING SYMBOL 2N6292 UNITS Collector-Emitter Voltage VCEO 70 Volts Collector-Base Voltage VoBo 80 Volts Emitter Base Voltage VeBo 5 Volts Collector Current Continuous Io 7 A Peak lom Base Current Continuous Ip 3 A Total Power Dissipation @ Ta = 25C Pp 1.8 Watts @To=25C 40 w/c Operating and Storage Junction Temperature Range Ty, Tsta -65 to +150 C thermal characteristics Thermal Resistance, Junction to Ambient Rasa . 70 C/W Thermal Resistance, Junction to Case Rasc 3.125 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 235 C 811electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX | UNIT | off characteristics Coilector-Emitter Sustaining Voltage (I = .1MA) VCEO(sus) 70 _ _ Volts Collector-Emitter Sustaining Voltage _ (Ic = .1mA, Ig = 1.5V) VCER(sus) 80 Volts Collector Cutoff Current (VcE = 60V) Collector Cutoff Current | _ (VcE = 75V, Vep = 1.5V) Cex Emitter Cutoff Current leRo (VeB = 5V) IcEo _ _ 1 mA second breakdown | Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 2 j on characteristics DC Current Gain (Ig = 2A, Voce = 4V) hee 30 150 (I = 7A, VCE = 4V) 2.3 Collector-Emitter Saturation Voltage VCE(sat (I = 2.5A, Ig = .25A) (sa) a 1 V (ig = 7A, Ip = 3A) 3.5 Vv Base-Emitter Voltage VBE(on) (Ic = 2A, Voge = 4V) _ _ 1.5 V (Ic = 7A, Voge = 4V) _ 3 ma I COLLECTOR-TO-EMITTER VOLTAGE (VCE) = 4V CASE TEMPERATURE (Tc) = 25C CASE TEMPERATURE (Tc) = 25C 8 Ig MAX an aN Ne {s/b ~ LIMITED 2 \ VCEO MAX. = 25V Voce! MAX. = 50V VCEO MAX. = 70V GAIN-BANDWIDTH PRODUCT (fy) - MHz a COLLECTOR CURRENT (ic) - A 0.0 2 4 6 8 OF 2 468 1 2 4 1 2 4 681 249 40 80 100 200 400 1000 COLLECTOR CURRENT (Ic}-A COLLECTOR-TO-EMITTER VOLTAGE (VcE) - V FIG. 1 TYPICAL GAIN-BANDWIDTH FIG. 2 MAXIMUM OPERATING AREA 812OC FORWARD-CURRENT TRANSFER RATIO (hFe) BASE CURRENT (Is) - mA 400 @ 88 20 0. 250 GOLLECTOR-TO-EMITTER VOLTAGE (VCE) = 4V . woes ' CASE TEMPERATURE (Tc) = 125C COLLECTOR CURRENT (Ic) -A .01 0.02 0.04 0.1 0.2 0.4 06 08% 2 4 6 8 10 COLLECTOR CURRENT MT (Ig) - A FIG.3 TYPICAL CHARACTERISTICS Ic MAX. (CONTINUOUS) - CASE TEMPERATURE (TG) = 100C VCEO MAX. = TOV (2N6292 & 2N6293) 01 1 2 4 6 8 10 20 40 60 80100 COLLECTOR TO EMITTER VOLTAGE (Ve) - V FIG.4 MAXIMUM OPERATING AREA | I | I COLLECTOR-TO-EMITTER VOLTAGE (VcE) = 4V a a wo CASE TEMPERATURE (T) = 125 ~ ny L LP oN Y 7 COLLECTOR CURRENT (Ic) - A ZL LZ Y . 4A Qo 0.2 0.4 0.6 08 1 1.2 1.4 16 BASETO-EMITTER VOLTAGE (VBE) - V FIG.5 TYPICAL TRANSFER CHARACTERISTICS T T T T T COLLECTOR-TO-EMITTER VOLTAGE (Ve) - 4V CASE TEMPERATURE (Tc) = 125C COLLECTOR CURRENT (Ic) - A a | | P| -40C | / 0.1 0s 1 15 2 BASE-TO-EMITTER VOLTAGE. (VBE) - V FIG. 6 TYPICAL INPUT CHARACTERISTICS 813 CASE TEMPERATURE (TC) = 25C BASE CURRENT (Ig) = 250 s 200 mA 150 mA 100 mA 0 2 4 6 8 10 12 14 16 COLLECTOR-TO-EMITTER VOLTAGE (VCE) - V FIG.7 TYPICAL OUTPUT CHARACTERISTICS