Order this document by MRF1507/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment. * Specified Performance @ 520 MHz, 7.5 Volts Output Power -- 8 Watts Power Gain -- 10 dB Efficiency -- 65% * Characterized with Series Equivalent Large-Signal D Impedance Parameters * Excellent Thermal Stability * Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request G * RF Power Plastic Surface Mount Package * Available in Tape and Reel by Adding T1 Suffix to Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. 8 W, 520 MHz, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD 1.5) S MAXIMUM RATINGS Rating Drain-Source Voltage (1) Symbol Value Unit VDSS 25 Vdc VGS 20 Vdc Drain Current -- Continuous ID 4 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 62.5 0.50 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Tj 150 C Symbol Max Unit RJC 2 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Not designed for 12.5 volt applications. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 1998 MRF1507 MRF1507T1 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2.5 3.4 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) 0.3 0.44 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs 1.30 1.80 -- S Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 48 -- pF Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 40.5 -- pF Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 5.2 -- pF Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) Gps 10 11 -- dB Drain Efficiency (VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) 50 65 -- % Pout (VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) Pout 8 9.9 -- W OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF1507 MRF1507T1 2 MOTOROLA RF DEVICE DATA B1 R2 VGG C1 + C2 + R1 C3 R3 C6 VDD C4 C5 L1 Z7 N1 RF INPUT Z1 Z2 Z3 Z4 R4 Z5 Z6 Z8 C8 B1 C1, C5 C2, C4 C3, C6, C8, C14 C7, C9, C13 C10 C11 C12 L1 N1, N2 R1 R2 R3 Z10 DUT N2 Z11 RF OUTPUT C14 C12 C7 Z9 C13 C10 C9 C11 20 , 1/4 W Carbon 0.459 x 0.083 Microstrip 0.135 x 0.083 Microstrip 1.104 x 0.083 Microstrip 0.114 x 0.083 Microstrip 0.154 x 0.083 Microstrip 0.259 x 0.213 Microstrip 0.217 x 0.213 Microstrip 0.175 x 0.083 Microstrip 0.747 x 0.083 Microstrip 0.608 x 0.083 Microstrip 0.594 x 0.083 Microstrip Glass Teflon, 31 mils R4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Board Fair Rite Products Long Ferrite Bead 0.1 F, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 130 pF, 100 mil Chip Capacitor 0.3-20 pF Trimmer Capacitor 82 pF, 100 mil Chip Capacitor 39 pF, 100 mil Chip Capacitor 32 pF, 100 mil Chip Capacitor 4 Turns, #20 AWG Enamel, 0.1 ID Type N Connectors 1.1 M, 1/4 W Carbon 2 k, 1/2 W Carbon 100 , 1/4 W Carbon Figure 1. 500 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS 11 12 11 440 MHz Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 10 9 8 470 MHz 7 6 400 MHz 5 4 3 VDD = 7.5 V IDQ = 200 mA 2 1 0.10 0.30 0.71 1.10 0.50 0.90 Pin, INPUT POWER (WATTS) 1.31 Figure 2. Output Power versus Input Power MOTOROLA RF DEVICE DATA IDQ = 200 mA 700 mW 10 9 500 mW 8 7 6 Pin = 300 mW 5 1.51 4 6 7 8 VDD, SUPPLY VOLTAGE (V) 9 10 Figure 3. Output Power versus Supply Voltage @ 400 MHz MRF1507 MRF1507T1 3 TYPICAL CHARACTERISTICS 13 13 12 IDQ = 200 mA 11 Pout , OUTPUT POWER (WATTS) 700 mW 10 500 mW 9 8 7 Pin = 300 mW 6 5 IDQ = 200 mA 700 mW 11 10 500 mW 9 8 7 Pin = 300 mW 6 5 6 7 8 VDD, SUPPLY VOLTAGE (V) 9 4 10 6 7 Figure 4. Output Power versus Supply Voltage @ 470 MHz 8.5 80 16 8 GAIN (dB), Pout (WATTS) Pout , OUTPUT POWER (WATTS) 10 20 f = 470 MHz f = 440 MHz 70 DRAIN EFFICIENCY 12 7.5 f = 400 MHz 7 60 GAIN 8 50 Pout f = 520 MHz IDQ = 150 mA Pin = 0.7 W 4 6.5 VCC = 7.5 V Pin = 0.6 W 0 0 50 100 150 200 250 300 350 IDQ, GATE CURRENT (mA) 400 450 4 500 6 7 8 VDD, DRAIN VOLTAGE (V) 5 Figure 6. Output Power versus Gate Current 9 40 30 10 Figure 7. Gain, Pout, Efficiency versus Drain Voltage 12 15 70 GAIN GAIN GAIN (dB), Pout (WATTS) Gp (dB),Pout , OUTPUT POWER (WATTS) 9 Figure 5. Output Power versus Supply Voltage @ 440 MHz 9 6 8 VDD, SUPPLY VOLTAGE (V) 60 10 Pout 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IDQ (A) Figure 8. Pout versus IDQ MRF1507 MRF1507T1 4 0.8 0.9 50 DRAIN EFFICIENCY 40 PPout out 5 f = 520 MHz VDD = 7.5 V IDQ = 150 mA f = 520 MHz VDD = 7.5 V Pin = 0.7 W 8 DRAIN EFFICIENCY (%) 4 1.0 0 15 17 DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 12 30 19 21 23 25 27 20 29 INPUT POWER (dBm) Figure 9. Pout, Gain, Drain Efficiency versus Pin MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 12 f = 500 MHz VDD = 7.5 V 10 700 mW Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 12 500 mW 8 6 Pin = 250 mW 4 2 0 4 5 7 8 VDS, DRAIN VOLTAGE (V) 9 6 10 700 mW 10 500 mW 8 6 Pin = 250 mW 4 2 f = 500 MHz VDD = 7.5 V 0 0 100 Figure 10. Pout versus Drain Voltage f = 520 MHz VDD = 7.5 V 10 700 mW 500 mW 8 6 Pin = 250 mW 4 2 900 1000 700 mW 500 mW 8 6 Pin = 250 mW 4 f = 520 MHz VDD = 7.5 V 2 0 4 5 6 7 8 VDS, DRAIN VOLTAGE (V) 9 10 0 100 200 300 400 500 600 IDQ, (mA) 700 800 900 1000 Figure 13. Pout versus IDQ 12 17 VDD = 9 V 11 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 800 10 Figure 12. Pout versus Drain Voltage 10 9 VDD = 7.5 V 8 7 f = 135 MHz IDQ = 800 mA 6 5 700 12 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 400 500 600 IDQ, (mA) Figure 11. Pout versus IDQ 12 0 300 200 20 21 22 23 Pin, (dBm) Figure 14. Pout versus Pin MOTOROLA RF DEVICE DATA 24 25 VDD = 9 V 15 13 VDD = 7.5 V 11 9 f = 155 MHz IDQ = 800 mA 7 5 20 21 22 23 24 25 Pin, (dBm) Figure 15. Pout versus Pin MRF1507 MRF1507T1 5 TYPICAL CHARACTERISTICS 4 15 VDS = 10 V VDD = 9 V ID , DRAIN CURRENT (AMPS) Pout , OUTPUT POWER (WATTS) 17 13 VDD = 7.5 V 11 9 f = 175 MHz IDQ = 800 mA 7 5 20 21 22 23 24 3 2 1 0 25 TYPICAL DEVICE SHOWN 0 Pin, (dBm) Figure 16. Pout versus Pin 5 6 5 ID , DRAIN CURRENT (AMPS) VGS = 0 V f = 1 MHz C, CAPACITANCE (pF) 3 2 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 17. Drain Current versus Gate Voltage (Typical Device Shown) 80 60 Ciss 40 Coss 20 0 1 Crss 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 18. Capacitance versus Voltage MRF1507 MRF1507T1 6 20 4 3 TC = 25C 2 1 0 0 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 19. Maximum Rated Forward Biased Safe Operating Area MOTOROLA RF DEVICE DATA 520 f = 400 MHz 175 ZOL* ZOL* f = 135 MHz Zo = 10 f = 400 MHz Zin 520 Zin f = 135 MHz 175 VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz Zin Zin VDD = 7.5 V, IDQ = 800 mA, Pout = 8 W ZOL* f MHz Zin ZOL* 400 3.6 - j3.1 2.5 - j0.5 135 6.2 - j15.1 2.3 - j1.8 440 4.0 - j3.7 2.7 - j0.6 155 8.29 - j16.9 2.5 - j0.8 470 3.1 - j4.4 2.5 - j1.2 175 5.33 - j17.0 2.6 - j0.6 500 2.0 - j2.71 2.05 - j0.65 520 1.9 - j3.5 2.1 - j0.4 = Conjugate of source impedance with parallel 20 resistor and 82 pF capacitor in series with gate. ZOL* = Conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin = Conjugate of source impedance with parallel 10 resistor and 1000 pF capacitor in series with gate. ZOL* = Conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. MOTOROLA RF DEVICE DATA MRF1507 MRF1507T1 7 Table 1. Common Source Scattering Parameters (VDS = 7.5 Vdc) ID = 150 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.76 -138 15.18 100 0.04 12 0.71 -141 100 0.77 -155 7.68 84 0.04 -3 0.72 -156 200 0.81 -162 3.53 65 0.03 -18 0.78 -162 300 0.85 -165 2.08 53 0.03 -27 0.83 -164 400 0.89 -167 1.37 44 0.03 -33 0.87 -166 500 0.91 -169 0.96 37 0.02 -36 0.90 -168 700 0.95 -171 0.54 27 0.01 -35 0.94 -170 850 0.96 -173 0.38 22 0.01 -30 0.95 -172 1000 0.97 -174 0.29 19 0.01 -19 0.96 -173 1200 0.98 -175 0.20 16 0.01 3 0.97 -174 9 |S22| 0.79 -161 ID = 800 mA f MHz S11 S21 S22 -152 98 |S12| 0.03 0.81 -165 8.37 88 0.03 1 0.80 -169 0.82 -170 4.08 76 0.02 -8 0.81 -172 300 0.84 -172 2.60 68 0.02 -13 0.83 -173 400 0.85 -172 1.84 61 0.02 -17 0.84 -173 500 0.87 -172 1.38 54 0.02 -20 0.86 -173 700 0.90 -173 0.86 44 0.02 -21 0.89 -174 850 0.91 -174 0.64 38 0.01 -19 0.90 -174 1000 0.92 -175 0.49 33 0.01 -12 0.92 -175 1200 0.94 -176 0.36 29 0.01 2 0.93 -176 -164 50 100 200 S12 |S21| 16.58 |S11| 0.82 ID = 1.5 A f MHz S11 S21 S22 -156 97 |S12| 0.02 9 |S22| 0.80 -167 8.29 88 0.02 1 0.81 -171 0.83 -172 4.06 77 0.02 -6 0.82 -174 300 0.84 -173 2.61 70 0.02 -10 0.83 -174 400 0.86 -173 1.86 63 0.02 -13 0.85 -174 500 0.87 -174 1.41 57 0.02 -15 0.86 -174 700 0.89 -174 0.89 47 0.01 -16 0.88 -175 850 0.91 -175 0.67 41 0.01 -13 0.90 -175 1000 0.92 -175 0.52 36 0.01 -6 0.91 -175 1200 0.93 -176 0.38 31 0.01 8 0.92 -176 50 100 0.83 200 MRF1507 MRF1507T1 8 S12 |S21| 16.45 |S11| 0.83 MOTOROLA RF DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS The MRF1507 is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in MOTOROLA RF DEVICE DATA the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. MRF1507 MRF1507T1 9 DC BIAS Since the MRF1507 is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. The MRF1507 was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF1507 may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal MRF1507 MRF1507T1 10 of the thermal design should be to minimize the temperature at the back side of the package. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for the MRF1507. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large- signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of the MRF1507 yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Tw o-port stabi l i ty anal y s is w i th the M RF1507 S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS L R C 2 A F Z O N E 4 3 EEEE EEEE EEEE EEEE EEEE EEEE EEE EEE 10_DRAFT P N K U X G Q ZONE V H 1 D B S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. J E 0.89 (0.035) X 45 _ Z O N E "5 _ RESIN BLEED/FLASH ALLOWABLE STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE DIM A B C D E W F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 CASE 466-02 ISSUE B (PLD 1.5) MOTOROLA RF DEVICE DATA MRF1507 MRF1507T1 11 Motorola reserves the right to make changes without further notice to any products herein. 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