IRGB/S/SL4B60KD1PbF
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Note to are on page 16
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Volta
—0.28—V/°C
VGE = 0V, IC = 1mA (25°C-150°C)
—2.12.5 IC = 4.0A, VGE = 15V, TJ = 25°C 5,6,7
VCE(on) Collector-to-Emitter Voltage — 2.5 2.8 V IC = 4.0A, VGE = 15V, TJ = 150°C 9,10,11
—2.62.9 IC = 4.0A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 9,10,11
∆VGE(th)/∆TJThreshold Voltage temp. coefficient — -8.1 — mV/°
VCE = VGE, IC = 1mA (25°C-150°C) 12
gfe Forward Transconductance — 1.7 — S VCE = 50V, IC = 4.0A, PW = 80µs
—1.0150 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current — 136 600 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 722 2400 VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.4 2.0 V IF = 4.0A 8
—1.31.8 IF = 4.0A, TJ = 150°C
—1.21.7 IF = 4.0A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
QgTotal Gate Charge (turn-on) — 12 — IC = 4.0A 23
Qge Gate-to-Emitter Charge (turn-on) — 1.7 — nC VCC = 400V CT1
Qgc Gate-to-Collector Charge (turn-on) — 6.5 — VGE = 15V
Eon Turn-On Switching Loss — 73 80 IC = 4.0A, VCC = 400V CT4
Eoff Turn-Off Switching Loss — 47 53 µJ VGE = 15V, RG = 100Ω, L = 2.5mH
Etot Total Switching Loss — 120 130 TJ = 25°C
e
td(on) Turn-On delay time — 22 28 IC = 4.0A, VCC = 400V
trRise time — 18 23 ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4
td(off) Turn-Off delay time — 100 110 TJ = 25°C
tfFall time — 66 80
Eon Turn-On Switching Loss — 130 150 IC = 4.0A, VCC = 400V CT4
Eoff Turn-Off Switching Loss — 83 140 µJ VGE = 15V, RG = 100Ω, L = 2.5mH 13,15
Etot Total Switching Loss — 220 280 TJ = 150°C
e
WF1,WF2
td(on) Turn-On delay time — 22 27 IC = 4.0A, VCC = 400V 14,16
trRise time — 18 22 ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4
td(off) Turn-Off delay time — 120 130 TJ = 150°C WF1
tfFall time — 79 89 WF2
Cies Input Capacitance — 190 — VGE = 0V
Coes Output Capacitance — 25 — pF VCC = 30V 22
Cres Reverse Transfer Capacitance — 6.2 — f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 22A, Vp = 600V 4
VCC=500V,VGE = +15V to 0V,RG = 100Ω CT2
SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 100Ω CT3
VCC=360V,VGE = +15V to 0V WF4
Erec Reverse Recovery Energy of the Diode — 81 100 µJ TJ = 150°C 17,18,19
trr Diode Reverse Recovery Time — 93 — ns VCC = 400V, IF = 4.0A, L = 2.5mH 20,21
Irr Peak Reverse Recovery Current — 6.3 7.9 A VGE = 15V, RG = 100ΩCT4,WF3