NTE464 (P−Ch) & NTE465 (N−Ch)
Silicon Complementary MOSFET Transistors
Enhancement Mode for Switching Applications
TO72 Type Package
Absolute Maximum Ratings:
Drain−Source Voltage, VDS 25V..........................................................
Drain−Gate Voltage, VDG 30V............................................................
Gate−Source Voltage, VGS +30V.........................................................
Gate Current, IG30mA..................................................................
Total Device Dissipation (TA = +255C), PD300mW.........................................
Derate Above 255C 1.7mW/5C.....................................................
Total Device Dissipation (TC = +255C), PD800mW.........................................
Derate Above 255C 4.56mW/5C....................................................
Operating Junction Temperature, TJ+1755C...............................................
Storage Temperature Range, Tstg −555 to +1755C..........................................
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Drain−Source Breakdown Voltage V(BR)DSX ID = −105A, VGS = 0 −25 − − V
Zero−Gate−Voltage Drain Current IDSS VDS = −10V, VGS = 0, TA = +255C− − −10 nA
VDS = −10V, VGS = 0, TA = +1505C− − −10 5A
Gate Reverse Current IGSS VGS = +30V, VDS = 0 − − +10 pA
ON Characteristics
Gate Threshold Voltage VGS(Th) VDS = −10V, ID = −105A−1− −5 V
Drain−Source On−Voltage VDS(on) ID = −2mA, VGS = −10V − − −1 V
On−State Drain Current ID(on) VGS = −10V, VDS = −10V −3− − mA
Rev. 10−13
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small−Signal Characteristics
Drain−Source Resistance
NTE464 rds(on) VGS = −10V, ID = 0, f = 1kHz − − 600 +
NTE465 − − 300 +
Forward Transfer Admittance |yfs| VDS = −10V, ID = 2mA, f = 1kHz 1000 − − 5mhos
Input Capacitance Ciss VDS = −10V, VGS = 0, f = 140kHz − − 5 pF
Reverse Transfer Capacitance Crss VDS = 0, VGS = 0, f = 140kHz − − 1.3 pF
Drain−Substrate Capacitance
NTE464 Cd(sub) VD(SUB) = −10V, f = 140kHz − − 4pF
NTE465 − − 5 pF
Switching Characteristics
Turn−On Delay td1 ID = −2mA, VDS = −10V, VGS = −10V − − 45 ns
Rise Time tr− − 65 ns
Turn−Off Delay td2 − − 60 ns
Fall Time tf− − 100 ns
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.040 (1.02)
.018 (0.45) Dia
455
Source
Gate
Drain
Case
.190
(4.82)
.500
(12.7)
Min
NTE464
NTE465
GS
D
Case
GS
D
Case
