PBLS4005Y,115 - NEXPERIA - Datasheet.Directory

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1. Product proﬁle

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-

Equipped Transistor (RET) in one package.

1.2 Features

nLow VCEsat (BISS) and resistor-equipped transistor in one package

nLow threshold voltage (<1 V) compared to MOSFET

nLow drive power required

nSpace-saving solution

nReduction of component count

1.3 Applications

nSupply line switches

nBattery charger switches

nHigh-side switches for LEDs, drivers and backlights

nPortable equipment

1.4 Quick reference data

PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

Rev. 03 — 16 February 2009 Product data sheet

Table 1. Product overview

Type number Package

NXP JEITA

PBLS4005Y SOT363 SC-88

PBLS4005V SOT666 -

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP low VCEsat transistor

VCEO collector-emitter voltage open base - - −40 V

ICcollector current - - −500 mA

RCEsat collector-emitter saturation

resistance IC=−500 mA;

IB=−50 mA [1] - 440 700 mΩ

TR2; NPN resistor-equipped transistor

VCEO collector-emitter voltage open base - - 50 V

Product data sheet Rev. 03 — 16 February 2009 2 of 11

NXP Semiconductors PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

[1] Pulse test: tp≤300 µs; δ≤0.02.

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

IOoutput current - - 100 mA

R1 bias resistor 1 (input) 33 47 61 kΩ

R2/R1 bias resistor ratio 0.8 1 1.2

Table 2. Quick reference data

…continued

Symbol Parameter Conditions Min Typ Max Unit

Table 3. Pinning

Pin Description Simpliﬁed outline Graphic symbol

1 emitter TR1

2 base TR1

3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2

6 collector TR1

001aab555

6 45

1 32

65 4

123

TR1 TR2

sym036

Table 4. Ordering information

Type number Package

Name Description Version

PBLS4005Y SC-88 plastic surface-mounted package; 6 leads SOT363

PBLS4005V - plastic surface-mounted package; 6 leads SOT666

Table 5. Marking codes

Type number Marking code[1]

PBLS4005Y S5*

PBLS4005V K5

Product data sheet Rev. 03 — 16 February 2009 3 of 11

NXP Semiconductors PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

TR1; PNP low VCEsat transistor

VCBO collector-base voltage open emitter - −40 V

VCEO collector-emitter voltage open base - −40 V

VEBO emitter-base voltage open collector - −6V

ICcollector current - −500 mA

ICM peak collector current single pulse; tp≤1ms - −1A

IBbase current - −50 mA

IBM peak base current single pulse; tp≤1ms - −100 mA

Ptot total power dissipation Tamb ≤25 °C[1] - 200 mW

TR2; NPN resistor-equipped transistor

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 10 V

VIinput voltage

positive - +40 V

negative - −10 V

IOoutput current - 100 mA

ICM peak collector current single pulse; tp≤1 ms - 100 mA

Ptot total power dissipation Tamb ≤25 °C[1] - 200 mW

Per device

Ptot total power dissipation Tamb ≤25 °C - 300 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air

SOT363 [1] - - 416 K/W

SOT666 [1][2] - - 416 K/W

Product data sheet Rev. 03 — 16 February 2009 4 of 11

NXP Semiconductors PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

7. Characteristics

[1] Pulse test: tp≤300 µs; δ≤0.02.

Table 8. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP low VCEsat transistor

ICBO collector-base cut-off

current VCB =−40 V; IE=0A - - −100 nA

VCB =−40 V; IE=0A;

Tj= 150 °C--−50 µA

IEBO emitter-base cut-off

current VEB =−5 V; IC=0A - - −100 nA

hFE DC current gain VCE =−2 V; IC=−10 mA 200 - -

VCE =−2 V; IC=−100 mA [1] 150 - -

VCE =−2 V; IC=−500 mA [1] 40 - -

VCEsat collector-emitter

saturation voltage IC=−10 mA; IB=−0.5 mA - - −50 mV

IC=−100 mA; IB=−5mA - - −130 mV

IC=−200 mA; IB=−10 mA - - −200 mV

IC=−500 mA; IB=−50 mA [1] --−350 mV

RCEsat collector-emitter

saturation resistance IC=−500 mA; IB=−50 mA [1] - 440 700 mΩ

VBEsat base-emitter

saturation voltage IC=−500 mA; IB=−50 mA [1] --−1.2 V

VBEon base-emitter

turn-on voltage VCE =−2 V; IC=−100 mA [1] --−1.1 V

fTtransition frequency IC=−100 mA; VCE =−5V;

f = 100 MHz 100 300 - MHz

Cccollector capacitance VCB =−10 V; IE=i

e=0A;

f=1MHz --10pF

TR2; NPN resistor-equipped transistor

ICBO collector-base cut-off

current VCB =50V; I

E= 0 A - - 100 nA

ICEO collector-emitter

cut-off current VCE =30V; I

B=0A --1µA

VCE =30V; I

B=0A;

Tj= 150 °C--50µA

IEBO emitter-base cut-off

current VEB =5V; I

C=0A --90µA

hFE DC current gain VCE =5V; I

C= 5 mA 80 - -

VCEsat collector-emitter

saturation voltage IC= 10 mA; IB= 0.5 mA - - 150 mV

VI(off) off-state input voltage VCE =5V; I

C= 100 µA - 1.2 0.8 V

VI(on) on-state input voltage VCE = 0.3 V; IC=5mA 3 1.6 - V

R1 bias resistor 1 (input) 33 47 61 kΩ

R2/R1 bias resistor ratio 0.8 1 1.2

Cccollector capacitance VCB =10V; I

E=i

e=0A;

f=1MHz - - 2.5 pF

Product data sheet Rev. 03 — 16 February 2009 5 of 11

NXP Semiconductors PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

VCE =−2V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

Fig 1. TR1 (PNP): DC current gain as a function of

collector current; typical values Fig 2. TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

VCE =−2V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 3. TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values Fig 4. TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

006aaa388

200

400

600

hFE

IC (mA)

−10−1−103

−102

−1−10

(1)

(2)

(3)

VCE (V)

0−5−4−2−3−1

006aaa394

−0.4

−0.6

−0.2

−0.8

−1

(A)

IB (mA) = −30

−3

−6

−9

−12

−15

−27

−24

−21

−18

006aaa389

−0.5

−0.7

−0.3

−0.9

−1.1

VBE

(V)

− 0.1

IC (mA)

−10−1−103

−102

−1−10

(1)

(2)

(3)

006aaa392

−0.5

−0.7

−0.3

−0.9

−1.1

VBEsat

(V)

−0.1

IC (mA)

−10−1−103

−102

−1−10

(1)

(2)

(3)

Product data sheet Rev. 03 — 16 February 2009 6 of 11

NXP Semiconductors PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 5. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 6. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 7. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

Fig 8. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

006aaa390

IC (mA)

−10−1−103

−102

−1−10

−10−1

−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

006aaa391

IC (mA)

−10−1−103

−102

−1−10

−10−1

−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

006aaa393

IC (mA)

−10−1−103

−102

−1−10

102

103

RCEsat

(Ω)

10−1

(1)

(2)

(3)

006aaa395

IC (mA)

−10−1−103

−102

−1−10

102

103

RCEsat

(Ω)

10−1

(1)

(2)

(3)

Product data sheet Rev. 03 — 16 February 2009 7 of 11

NXP Semiconductors PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

Fig 9. TR2 (NPN): DC current gain as a function of

collector current; typical values Fig 10. TR2 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

VCE = 0.3 V

(1) Tamb =−40 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

VCE =5V

(1) Tamb =−40 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 11. TR2 (NPN): On-state input voltage as a

function of collector current; typical values Fig 12. TR2 (NPN): Off-state input voltage as a

function of collector current; typical values

IC (mA)

10−1102

101

006aaa042

102

103

hFE

(1)

(2)

(3)

006aaa043

IC (mA)

110

10−1

VCEsat

(V)

10−2

(1)

(2)

(3)

006aaa044

IC (mA)

10−1102

101

VI(on)

(V)

10−1

(1)

(2)

(3)

006aaa045

IC (mA)

10−210110−1

VI(off)

(V)

10−1

(1)

(2)

(3)

Product data sheet Rev. 03 — 16 February 2009 8 of 11

NXP Semiconductors PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 12.

[2] T1: normal taping

[3] T2: reverse taping

Fig 13. Package outline SOT363 (SC-88) Fig 14. Package outline SOT666

06-03-16Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0 1.35

1.15

2.2

1.8 1.1

0.8

0.45

0.15

132

465

Dimensions in mm 04-11-08

1.7

1.5

1.7

1.5

1.3

1.1

0.18

0.08

0.27

0.17

0.5

pin 1 index

123

456

0.6

0.5

0.3

0.1

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 4000 8000 10000

PBLS4005Y SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165

PBLS4005V SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

Product data sheet Rev. 03 — 16 February 2009 9 of 11

NXP Semiconductors PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBLS4005Y_PBLS4005V_3 20090216 Product data sheet - PBLS4005Y_PBLS4005V_2

Modiﬁcations: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Figure 5: y-axis value unit amended

•Figure 6: y-axis value unit amended

•Section 11 “Legal information”: updated

PBLS4005Y_PBLS4005V_2 20050713 Product data sheet - PBLS4005Y_PBLS4005V_1

PBLS4005Y_PBLS4005V_1 20041206 Product data sheet - -

Product data sheet Rev. 03 — 16 February 2009 10 of 11

NXP Semiconductors PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PBLS4005Y; PBLS4005V

40 V PNP BISS loadswitch

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 16 February 2009

Document identifier: PBLS4005Y_PBLS4005V_3

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

11.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Contact information. . . . . . . . . . . . . . . . . . . . . 10

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11