2N4352 Transistors P-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)25 V(BR)GSS (V)30 I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (oC) IDM Max (@25oC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (oC) Maximum Operating Temp (oC)200 Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (oC) (Test Condition) I(GSS) Max. (A)10p