IRKU/V71, 91 Series
2
Bulletin I27135 rev. F 10/02
www.irf.com
VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
IRKU/V71, 91 08 80 0 900 800 15
12 1200 1300 1200
16 1600 1700 1600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IT(AV) Max. average on-state 75 95 180o conduction, half sine wave,
current TC = 85oC
IT(RMS)Max. RMS on-state 115 150 DC
current @TC80 75 °C
ITSM Max. peak, one cycle 1665 1785 t=10ms No voltage
non-repetitive on-state 1740 1870 t=8.3ms reapplied
current 1400 1500 t=10ms 100% VRRM
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms TJ = 25oC,
1940 2100 t=8.3ms no voltage reapplied
I2t Max. I2t for fusing 13.86 15.91 t=10ms No voltage
12.56 14.52 t=8.3ms reapplied
9.80 11.25 t=10ms 100% VRRM
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms TJ = 25oC,
15.60 18.30 t=8.3ms no voltage reapplied
I2√t Max. I2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied
VT(TO) Max. value of threshold 0.82 0.80 Low level (3)
voltage (2) 0.85 0.85 High level (4)
rtMax. value of on-state 3.00 2.40 Low level (3)
slope resistance (2) 2.90 2.25 High level (4)
VTM Max. peak on-state ITM = π x IT(AV)
voltage IFM = π x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,
of rise of turned on ITM =π x IT(AV), Ig = 500mA,
current tr < 0.5 µs, tp > 6 µs
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
ILMax. latching current 400 TJ = 25oC, anode supply = 6V,resistive load
TJ = TJ max
TJ = TJ max
(1) I2t for time tx = I2√t x √tx. (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x π x IAV < I < π x IAV (4) I > π x IAV
IHMax. holding current 200
Initial TJ = TJ max.
150 A/µs
KA2s
V
mΩ
mA
Sinusoidal
half wave,
Initial TJ = TJ max.
Parameters IRKU/V71 IRKU/V91 Units Conditions
On-state Conduction
A
A
1.59 1.58 VTJ = 25°C