CMSD7000 SUPER-MINI DUAL SILICON SWITCHING DIODE SERIES CONNECTION mini % SOT-323 CASE MAXIMUM RATINGS (T,=25C) Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Central . Semiconductor Corp. DESCRIPTION The CENTRAL SEMICONDUCTOR CMSD7000 type is a ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded super-mini surface mount package, connected in a series configuration, designed for high speed switching applications. Marking Code is 5CC. SYMBOL UNITS VRRM 100 Vv lo 200 mA \FM 500 mA Pp 250 mw OA 500 C/W ELECTRICAL CHARACTERISTICS (T,=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS BYR IR=100LA 100 Vv IR VR=50V 300 nA IR VR=50V, Ta=125C 100 pA IR Vp=100V 500 nA Ve Ip=1.0mA 0.55 0.70 Vv VE Ip=10mA 0.67 0.82 Vv Ve ip=100mA 0.75 1.10 Vv CT VR=0, f=1 MHz 1.5 pF ter IR=lF=10mA, R_=100Q, Rec. to 1.0mA 2.0 4.0 ns 286All Dimensions in Inches (mm). TOP VIEW ,071(1.80) 087(2.20) .004(0.10) 7 .047(1.20) -008(0.20) .004(0.10) .055(1.40 | 1*008(0.20) * ) | 026(0.65) _ + ,004(0.10) 2 1 MINIMUM 079(2.00) ,045(1.15) 087(2.20) 053(1.35) .004(0.10) 13 H MAXIMUM oaOaD Z (, :031(0.80) _ .016(0.40) .043(1.10) Lead Code: 1) Anode 2 2) Cathode 1 3) Anode 1, Cathode 2 287