October 2008 Rev 5 1/12
12
STP22NF03L
N-channel 30 V, 0.0038 , 22 A, TO-220
STripFET™ II Power MOSFET
Features
Exceptional dv/dt capability
Low gate charge at 100°C
Application oriented characterization
100% avalanche tested
Application
Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Figure 1. Internal schematic diagram
Type VDSS RDS(on) max ID
STP22NF03L 30 V < 0.05 22 A
123
TO-220
Table 1. Device summary
Order code Marking Package Packaging
STP22NF03L P22NF03L@ TO-220 Tube
www.st.com
Contents STP22NF03L
2/12
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP22NF03L Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VDGR Drain-gate voltage (RGS = 20 k)30V
VGS Gate- source voltage ± 15 V
IDDrain current (continuous) at TC = 25 °C 22 A
ID(1) Drain current (continuous) at TC = 100 °C 16 A
IDM(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 88 A
Ptot Total dissipation at TC = 25 °C 45 W
Derating factor 0.3 W/°C
dv/dt(2)
2. ISD 22 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
Peak diode recovery voltage slope 6 V/ns
EAS (3)
3. Starting Tj = 25 °C, ID = 11 A, VDD = 15 V
Single pulse avalanche energy 200 mJ
Tstg Storage temperature -55 to 175 °C
TjMax. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 3.33 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
TJMaximum lead temperature for soldering purpose 300 °C
Electrical characteristics STP22NF03L
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2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 250 µA, VGS =0 30 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max ratings
VDS = max ratings,
TC = 125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 11 A
VGS = 5 V, ID = 11 A
0.038
0.045
0.05
0.06
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward
transconductance VDS= 15 V , ID=11 A 7 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
330
90
40
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15 V, ID = 11 A
RG=4.7 VGS = 5 V
(see Figure 13)
13
4
12
5
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 24 V, ID = 22 A,
VGS = 5 V
(see Figure 14)
6.5
3.6
2
9nC
nC
nC
STP22NF03L Electrical characteristics
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Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
22
88
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 22 A, VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A,
di/dt = 100 A/µs,
VDD = 15 V, Tj = 150 °C
(see Figure 15)
30
18
1.2
ns
nC
A
Electrical characteristics STP22NF03L
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
100µs
1ms
10ms
AM01526v1
STP22NF03L Electrical characteristics
7/12
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized on resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
Test circuit STP22NF03L
8/12
3 Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47k1k
47k
2.7k
1k
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STP22NF03L Package mechanical data
9/12
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Package mechanical data STP22NF03L
10/12
TO-220 mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.480.70 0.0190.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.231.32 0.0480.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L1314 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
P3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
STP22NF03L Revision history
11/12
5 Revision history
Table 7. Document revision history
Date Revision Changes
09-Sep-2004 1 Datasheet according to PCN DSG-TRA/04/532
09-Aug-2006 2 New template, no content change
20-Feb-2007 3 Typo mistake on page 1
03-Sep-2007 4 Figure 2: Safe operating area has been update.
08-Oct-2008 5 Figure 2: Safe operating area has been update.
STP22NF03L
12/12
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