wa MBRB1530CTMBRB1545CT VISHAY Vishay Lite-On Power Semiconductor 15A Surface Mount Schottky Barrier Rectifiers Features Schottky barrier chip @ Guard ring die constuction for transient protection Low power loss, high efficiency High surge capability High current capability and low forward voltage drop Surge overload rating to 150A peak For use in low voltage, high frequency inverters, free wheeling, and polarity protection application @ Plastic material - UL Recognition flammability classification 94V-0 14455 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage MBRB1530CT VRRM 30 Vv =Working peak reverse voltage MBRB1535CT | =Vrwmu 35 Vv =DC Blocking voltage MBRB1540CT =VR AO V MBRB1545CT 45 Vv Peak forward surge current lego 150 A Average forward current Tce=105C lEay 15 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage lp=7.5A Ve 0.7 Vv Reverse current Ta=25C IR 0.1 mA Ta=100C IR 15 mA Maximum recovery time | |-=0.5A, IR=1.0A, |,,-=0.25A tr 30 ns Diode capacitance VrR=4V, f=1MHz Cp 250 pF Thermal resistance on PC board with 5mm? RihJt 3.0 K/W junction to terminal (0.013mm thick) copper pad as heat sink Voltage rate of change |300us pulse width, 2% duty cycle dV/dt 10000 | V/us ( Rated Vp ) Rev. A2, 24-Jun-98 1 (4)MBRB1530CTMBRB1545CT Vishay Lite-On Power Semiconductor VISHAY Characteristics (Tj = 25C unless otherwise specified) _ 20 < 5 16 5 6 To gz 12 = oO LL o 8 Dp g c 4 > i 0 15280 50 100 150 Tamb Ambient Temperature ( C ) Figure 1. Max. Average Forward Current vs. 100 10 1.0 |. Forward Current (A) 01 0.2 15281 Ambient Temperature Tj = 25C IF Pulse Width = 300 ps 2% Duty Cycle 0.4 0.6 0.8 Ve Forward Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage J 300 o 250 5 o 2, 200 a no ZS 150 oO = 100 x oO c 50 = i? 0 15282 TT TT iy T T T TTT. 8.3 ms single half-sine-wave JEDEC method eee hn 10 100 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 1 iL a Oo c Oo w a w Oo o 2 a I a Oo 0.1 1.0 10 100 15283 Vr Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 ~~ 10 = 2 5 Oo o 1, 2 > oc ic 0.1 Tj= 25C 0.01 0 40 80 120 15284 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Rev. A2, 24-Jun-98MBRB1530CTMBRB1545CT VISHAY Dimensions in mm . r+ PIN | O-- LS Vishay Lite-On Power Semiconductor I-C) PIN 2 and 4 PIN 3 O- pI Case: D2 PAK molded plastic Polarity: see diagram Approx. weight: 1.7 grams Mounting position: any Marking: type number <6 technical drawings according fo DIN specifications 14457 [2 PAK Dim Min Max A 9.65 10.69 B 14.60 15.88 C 0.51 1.14 D 2.29 2.19 E 43] 4.83 G 1.14 1.40 H 1.14 1.40 J 8.25 9.25 K 0.30 0.64 L 2.03 2.92 M 2.29 2.19 ALL Dimensions in mm Rev. A2, 24-Jun-98MBRB1530CTMBRB1545CT Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98