LESHAN RADIO COMPANY, LTD. Silicon PIN diode FEATURES * High voltage, current controlled * RF resistor for RF switches * Low diode capacitance * Low diode forward resistance (low loss) * Very low series inductance. 1 APPLICATIONS CATHODE * RF attenuators and switches * Bandswitch for TV tuners * Series diode for mobile communication transmit/receive switch. DESCRIPTION Planar PIN diode in a SOD523 ultra small SMD plastic package. BAP65 - 02 1 2 ANODE 2 SOD523 SC-79 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134). I SYMBOL PARAMETER VR IF continuous reverse voltage continuous forward current CONDITIONS P tot T stg total power dissipation storage temperature Tj junction temperature T s < 90C MIN. MAX. UNIT - - 30 100 V mA - -65 715 +150 mW C -65 +150 C ELECTRICAL CHARACTERISTICS T j = 25C unless otherwise specified. SYMBOL VF PARAMETER forward voltage IR Cd reverse current diode capacitance r D diode forward resistance |s 21| 2 |s 21| 2 |s 21| 2 |s 21| 2 |s 21| 2 isolation insertion loss insertion loss insertion loss insertion loss CONDITIONS I F =50 mA TYP. 0.9 MAX. 1.1 UNIT V V R =20 V V R = 0; f = 1 MHz - 0.65 20 - nA pF V R = 1 V; f = 1 MHz V R = 3 V; f = 1 MHz 0.55 0.5 0.9 0.8 pF pF V R = 20 V; f = 1 MHz I F = 1 mA; f = 100 MHz; 0.375 1 - - pF I F = 5 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 0.65 0.56 0.95 0.9 I F = 100 mA; f = 100 MHz; V R = 0; f = 900 MHz 0.35 10 - - dB V R = 0; f = 1800 MHz V R = 0; f = 2450 MHz 5.8 4.4 - - dB dB I F = 1 mA; f = 900 MHz I F = 1 mA; f = 1800 MHz 0.11 0.13 - - dB dB I F = 1 mA; f = 2450 MHz I F = 5 mA; f = 900 MHz 0.16 0.08 - - dB dB I F = 5 mA; f = 1800 MHz I F = 5 mA; f = 2450 MHz 0.11 0.13 - - dB dB I F = 10 mA; f = 900 MHz I F = 10 mA; f = 1800 MHz 0.07 0.1 - - dB dB I F = 10 mA; f = 2450 MHz I F = 100 mA; f = 900 MHz 0.13 0.07 - - dB dB I F = 100 mA; f = 1800 MHz I F = 100 mA; f = 2450 MHz 0.1 0.128 - - dB dB S27-1/2 LESHAN RADIO COMPANY, LTD. BAP65-02 ELECTRICAL CHARACTERISTICS T j = 25C unless otherwise specified. (Continue) SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT L charge carrier life time when switched from I F =10 mA to I R = 6 mA; R L = 100 ; 0.17 - s 0.6 - nH L measured at I R =3 mA I F =10 mA ; f =100MHz series inductance S Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering-point 85 K/W 1000 10 f = 100 MHz; T j =25C C d (pF) r D( ) 800 1 600 400 200 10 -1 f = 1 MHz; T j =25C 10 -1 1 10 2 10 0 0 I F (mA ) 4 8 12 16 20 VR(V) Fig.2 Diode capacitance as a function of reverse voltage; typical values. Fig.1 Forward resistance as a function of forward current; typical values. 0 0 - 10 |s 21| 2(dB) |s 21| 2(dB) -0.1 -0.2 (1) (2) (3) (4) (5) -0.3 I F =0.5 mA. I F =1 mA. I F = 5 mA. I F = 10 mA. I F = 100mA. - 20 - 30 -0.4 Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network. Diode zero biased and inserted in series with a 50 stripline circuit. Tamb =25C. Tamb =25C. -0.5 0 1 2 3 f (GHz ) Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state as a function of frequency; typical values. - 40 0 1 2 3 f (GHz ) Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. S27-2/2