AUIRFZ44VZS AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS 60V RDS(on) typ. 9.6m max. 12m ID 57A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Base part number D2Pak AUIRFZ44VZS G Gate D Drain Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Package Type D2-Pak AUIRFZ44VZS S G S Source Orderable Part Number AUIRFZ44VZS AUIRFZ44VZSTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy (Tested Limited) Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) VGS EAS (Thermally Limited) EAS (Tested) IAR EAR TJ TSTG Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mount), D2 Pak Max. Units 57 40 230 92 0.61 20 73 110 See Fig. 12a, 12b, 15, 16 A W W/C V mJ A mJ -55 to + 175 C 300 Typ. Max. Units --- --- 1.64 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-27 AUIRFZ44VZS Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. 60 Typ. Max. Units --- --- V Conditions VGS = 0V, ID = 250A V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- 9.6 12 VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V VDS = VGS, ID = 250A gfs Forward Trans conductance Drain-to-Source Leakage Current --- --- --- 20 S IDSS 25 --- VDS = 25V, ID = 34A VDS = 60V, VGS = 0V --- --- 250 IGSS Gate-to-Source Forward Leakage --- --- 200 Gate-to-Source Reverse Leakage --- --- -200 0.061 --- V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 34A A nA VDS = 60V,VGS = 0V,TJ =125C VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 43 11 18 14 62 35 38 65 --- --- --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1690 270 130 --- --- --- Coss Output Capacitance --- 1870 --- ID = 34A nC VDS = 48V VGS = 10V VDD = 30V ID = 34A ns RG= 12 VGS = 10V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz pF VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 260 --- VGS = 0V, VDS = 48V, = 1.0MHz Coss eff. Effective Output Capacitance --- 510 --- VGS = 0V, VDS = 0V to 48V Min. Typ. Max. Units --- --- 57 --- --- 230 --- --- --- --- 23 17 1.3 35 26 Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 34A,VGS = 0V ns TJ = 25C ,IF = 34A, VDD = 30V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) Limited by TJmax, starting TJ = 25C, L = 0.12mH, RG = 25, IAS = 34A, VGS =10V. Part not recommended for use above this value. Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production, starting TJ = 25C, L = 0.12mH, RG = 25, IAS = 34A, VGS =10V. . This is applied to D2Pak, when mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.. 2 2015-10-27 AUIRFZ44VZS 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 4.5V 60s PULSE WIDTH Tj = 25C 1 100 BOTTOM 10 4.5V 60s PULSE WIDTH Tj = 175C 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 10 100 Fig. 2 Typical Output Characteristics 60 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current ) 1 VDS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 100 T J = 175C 10 T J = 25C VDS = 25V 60s PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics T J = 175C 50 40 T J = 25C 30 20 10 VDS = 15V 380s PULSE WIDTH 0 1 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 9.0 0 10 20 30 40 50 60 ID, Drain-to-Source Current (A) Fig. 4 Typical Forward Trans conductance Vs. Drain Current 2015-10-27 AUIRFZ44VZS 3000 20 2500 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd C, Capacitance (pF) Coss = Cds + Cgd 2000 Ciss 1500 1000 500 Coss Crss VDS= 48V VDS= 30V VDS= 12V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 ID= 34A 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000.0 1000 100.0 10.0 T J = 25C VGS = 0V 0.1 0.2 0.6 40 50 60 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 T J = 175C 1.0 30 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 20 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1.0 1.4 VSD , Source-toDrain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 10 1.8 100sec 10 1msec 1 0.1 Tc = 25C Tj = 175C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2015-10-27 AUIRFZ44VZS 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 60 ID , Drain Current (A) 50 40 30 20 10 ID = 34A VGS = 10V 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 -60 -40 -20 175 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) T J , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 J 0.05 0.02 0.01 R1 R1 J 1 R2 R2 C 2 1 2 Ci= iRi Ci= iRi C Ri (C/W) i (sec) 0.960 0.00044 0.680 0.00585 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-10-27 AUIRFZ44VZS 15V DRIVER L VDS + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 300 D.U.T RG ID 3.8A 5.0A BOTTOM 34A TOP 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) I AS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy vs. Drain Current Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform VGS(th) Gate threshold Voltage (V) 4.0 ID = 250A 3.0 2.0 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit 6 2015-10-27 AUIRFZ44VZS 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs. Pulse width EAR , Avalanche Energy (mJ) 80 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 34A 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature 7 2015-10-27 AUIRFZ44VZS Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 2015-10-27 AUIRFZ44VZS D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUFZ44VZS YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-27 AUIRFZ44VZS D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-27 AUIRFZ44VZS Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level D2-Pak Machine Model Human Body Model ESD Charged Device Model RoHS Compliant MSL1 Class M4 (+/- 425V) AEC-Q101-002 Class H1B (+/- 1000V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 10/27/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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