June 2004
ipug12_03
isp
Lever
CORE
CORE
TM
Double Data Rate (DDR) SDRAM Controller
(Pipelined Version)
User’s Guide
2
Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Introduction
DDR (Double Data Rate) SDRAM was introduced as a replacement for SDRAM memory running at bus speeds
over 75MHz. DDR SDRAM is similar in function to regular SDRAM but doubles the bandwidth of the memory by
transferring data twice per cycle (on both edges of the clock signal), implementing burst mode data transfer.
The DDR SDRAM Controller is a parameterized core. This allows the user to modify the data widths, burst transfer
rates, and CAS latency settings of the design. In addition, the DDR core supports intelligent bank management. By
maintaining a database of “all banks activated” and the “rows activated” in each bank, the DDR SDRAM Controller
decides if an active or pre-charge command is needed. This effectively reduces the latency of read/write com-
mands issued to the DDR SDRAM.
Since the DDR SDRAM Controller takes care of activating/pre-charging the banks, the user can simply issue sim-
ple read/write commands without regard to the bank/charge status.
Features
•Performance of Greater than 100MHz (200 DDR)
• Interfaces to JEDEC Standard DDR SDRAMs
• Supports DDR SDRAM Data Widths of 16, 32 and 64 Bits
• Supports up to 8 External Memory Banks
• Programmable Burst Lengths of 2, 4, or 8
• Programmable CAS Latency of 1.5, 2.0, 2.5 or 3.0
•Byte-level Writing Supported
• Increased Throughput Using Command Pipelining and Bank Management
• Supports Power-down and Self Refresh Modes
•Automatic Initialization
•Automatic Refresh During Normal and Power-down Modes
• Timing and Settings Parameters Implemented as Programmable Registers
• Bus Interfaces to PCI Target, PowerPC and AMBA (AHB) Buses Available
• Complete Synchronous Implementation
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Figure 1. DDR Controller Block Diagram
Functional Description
The DDR SDRAM Controller block diagram, illustrated in Figure 1, consists of four functional modules: the Generic
Interface block, Command Execution Engine, Data Bus Interface block and the Initialization Control Logic.
Generic Interface Block
The Generic interface block contains the configuration registers: CFG0, CFG1, CFG2, and CFG3. These registers
are updated when a
Load_CFG
command is received from the user. These registers contain the programmable
DDR SDRAM timing parameters and can be changed by the user to suit the DDR SDRAM memory timings being
used thus giving the flexibility to use any DDR SDRAM memory.
Command Execution Engine
The command execution engine is the main component of the DDR SDRAM controller. This block accepts com-
mands from the “User Interface Bus” and keeps a record of bank open/close status. It accepts up to two commands
at any time (pipelined). Once a command is received, it decides whether to open the bank, close the bank or
directly execute the READ/WRITE commands and apply the appropriate DDR SDRAM commands to the DDR
SDRAM Memory. Table 1 shows the different user interface commands supported.
To maintain throughput of data this block uses two state machines to process READ/WRITE commands received
from the user interface. When the commands are continuously received, one state machine works in master mode
and the other state machine works in slave mode. The state machine that receives the command first becomes the
master and the other becomes the slave on receiving the second command. Once the master state machine com-
pletes the command execution, the slave state machine execution is enabled.
This block also maintains an auto refresh counter, which refreshes the DDR SDRAM memory at the predetermined
programmed intervals even during power down.
Generic I/F Block
Command Execution Engine
Address/2
Chip Select
Initialization Control
Logic
Data Bus Interface Block
User
Interface
Bus
DDR
SDRAM
Interface
Bus
Data_out
Data_in
Cmd
Address
Busy
Data_in Valid
Data_out Valid
Cmd
Address
Control
PCI,
PowerPC,
AHB
or Generic
Bus
Data/2
Data Strobe
Data Mask
On-chip
PLL
clk
clk2x
system
clock
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Table 1. DDR SDRAM Controller Generic I/F Commands
Data Bus Interface
The Data Bus Interface block controls the data flow between the User Interface bus and DDR SDRAM Memory
interface bus. The data received from the Memory during a read operation is converted from a double data rate to
single data rate; similarly the data to be written into the memory is converted from a single data rate to a double
data rate.
During a write operation, depending on the data mask signals, the data is written or masked by the DDR SDRAM-
memory.
Initialization Control Logic
When the User sets the initialization bit (Bit 7 in the configuration register CFG0) using the
Load_CFG
command,
this block starts initialization as specified in the DDR SDRAM specification. The DDR controller initialization can
only be performed after the system power is applied and the clock is running for at least 200 µs. An initialization is
required before any read/write command is issued to the DDR SDRAM memory.
User Interface Bus
In order to connect this controller to different bus standards Lattice provides the following “Bus Interface blocks”:
1. PCI Target Interface
2. Power PC Interface
3. AMBA-AHB Interface
4. Generic Bus Interface
The main function of these “Bus Interface blocks” is to trap all transactions on the respective bus addressed to the
DDR SDRAM and translate them into Generic Interface commands.
Since all the buses have burst addressing which is greater than the burst supported by the DDR SDRAM memory,
all the interfaces have an address generator block which generates the appropriate address depending on the
requested burst.
In all the interfaces the data going in and out of the bus is stored in a sync FIFO block, which is used as a storage
buffer for read/write commands. During a read from the DDR SDRAM the data is sent to FIFO and is read by Bus
Interface block. During a write the data is first written into the FIFO before actually writing this data into the DDR
SDRAM.
PCI Target Interface Block
The PCI Target Interface Block is used to interface the Lattice DDR Controller IP core with a Lattice PCI Target
core, which simplifies the usage in a PCI Bus environment. Figure 2 shows the system with a PCI Target core.
The following are the features of the PCI Target interface block:
Command Name Cmd[2:0] Description
NOP
000 No operation.
READ
001 Initiate a burst read.
WRITE
010 Initiate a burst write.
LOAD CONFIG REG
(
Load_CFG
)
011 Load controller configuration values. The controller uses this command to load the
CFG0/CFG1/CFG2/CFG3 registers.
LOAD MODE REG
(
Load_MR
)
100 Load the Mode and Extended Mode registers.
POWER DOWN
101 Put the DDR SDRAM into power-down or wake up from POWER DOWN.
SELF REFRESH
110 To enter into self refresh mode or get out of self refresh mode
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
•Parameterized data path width of 32- or 64-bit on the PCI Local Bus and the User interface bus of DDR control-
ler.
• Read/Write of configurable registers through PCI memory space.
• Read/Write to DDR through PCI memory space.
• Supports Power down and self refresh commands for low power applications.
• Programmable burst length.
• Programmable FIFO Depth
•Automatic wake up from power down/self refresh by a Read/Write command.
Figure 2. Typical PCI System with Lattice DDR SDRAM Controller
PowerPC BUS Interface Block
The Power PC Bus Interface block is used to interface with the Lattice DDR SDRAM Controller IP Core with the
Power PC 60x Bus. This interface allows easy usage of the Lattice DDR SDRAM Controller in a Power PC Bus
environment. Figure 3 shows the system with a Power PC Bus interface block.
The following are the features of the Power PC Bus interface block
• Supports PowerPC 601,603, 604 and processors supporting 60x bus.
•Parameterized data path widths of 32 or 64 bits.
• Supports both burst and single-beat data transfers (DDR Burst Length is 4).
• Programmable FIFO Depth
• Supports pipeline of two requests (write).
• Supports Address retry
• Supports separate address and data bus tenure.
PCI
BUS MASTER1
PCI
I/F
Block
PCI
BUS MASTER2
Lattice
DDR SDRAM
Controller
SDRAM External Bank 0
(e.g. DIMM)
SDRAM External Bank 1
Data/2
Data Strobe
Address/2
Control
Data Mask
PCI Bus
Command
Address
Dataout
Datain Chip Sel
Chip Sel 1
DDR IP Core
0
BusArbiter
Lattice
PCI
Target
IP Core
PCI Local Bus (Target Signals)
DDR SDRAM
Memory 0
4Mx8bit
DDR SDRAM
Memory 1
4Mx8bit
DDR SDRAM
Memory 2
4Mx8bit
DDR SDRAM
Memory 3
4Mx8bit
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Figure 3. Typical PowerPC System with Lattice DDR Controller
AHB Bus Interface Block
The AHB Bus Interface Block interfaces between AMBA Bus and Lattice DDR SDRAM Controller IP Core. This
interface allows easy usage of the Lattice DDR SDRAM Controller on an ARM AHB bus environment. Figure 4
shows the system with an AHB Bus interface block.
The following are the features of the AHB Bus interface block
•Parameterized data path widths of 32, 64 and 128 bits on the AMBA Bus and the User Interface Bus.
• Supports INCR4/INCR8/INCR16/WRAP4/WRAP8/WRAP16/INCR Bursts (DDR side Burst Length is 4)
• Supports Byte/Half word/Word/Double Word transfers (with 64bit AHB-Bus)
• Programmable FIFO Depth
Figure 4. Typical AHB System with Lattice DDR Controller IP Cores
BUS MASTER
(DMA Controller)
BusArbiter
Power PC
CPU
Power PC
I/F
Block
Lattice
DDR SDRAM
Controller
SDRAM External Bank 0
(e.g. DIMM)
SDRAM External Bank 1
Data/2
Data Strobe
Address/2
Control
Data Mask
Power PC Bus
Command
Address
Dataout
Datain Chip Sel 0
DDR SDRAM
Memory 0
4Mx8bit
DDR SDRAM
Memory 1
4Mx8bit
DDR SDRAM
Memory 2
4Mx8bit
DDR SDRAM
Memory 3
4Mx8bit
Chip Sel 1
DDR IP Core
DDR IP Core
ARM
Processor
DMA Controller
(Master)
AHB Decoder
AMBA
I/F
Block
Lattice
DDR SDRAM
Controller
SDRAM External Bank 0
(e.g. DIMM)
SDRAM External Bank 1
Data/2
Data Strobe
Address/2
Control
Data Mask
AHB Bus
Command
Address
Dataout
Datain Chip Sel 0
DDR SDRAM
Memory 0
4Mx8bit
DDR SDRAM
Memory 1
4Mx8bit
DDR SDRAM
Memory 2
4Mx8bit
DDR SDRAM
Memory 3
4Mx8bit
Chip Sel 1
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Parameter Descriptions
The static parameters are set before the design is synthesized to a gate-level netlist. The dynamic parameters can
also be set in this way, or they can be changed after the core is programmed onto a device by writing the values
into the Configuration Registers. The user should consult the DDR SDRAM specifications before choosing the
dynamic parameters, which are dependent on the DDR SDRAM device being used.
Table 2. Static DDR Core Parameters
Parameter Description Default Value
DSIZE
Defines the bus width for the data input/output port on the User Interface Bus side of
the core. The selectable values are 32, 64, and 128 bits depending on the Interface
Type. The data width on the DDR SDRAM Interface Bus (external memory side of the
core) will be half of this value. For example, if a 64-bit wide bus is needed to access
the DDR memory chip, the value for DSIZE needs to be set to 128.
32 bits
RSIZE
Defines row address width. 12 bits
CSIZE
Defines column width. 11 bits
BSIZE
Defines bank width for internal chip banks. This version of the DDR SDRAM Control-
ler is designed to work with memory chips containing four internal banks (sometimes
called a quad memory array). The default value for BSIZE cannot be changed in this
version of the core.
2 bits
RANK_SIZE
Defines the number of external Banks (RANKS). NOTE: an external bank is a mem-
ory chip or group of chips (such as on a DIMM) that can be accessed using the same
chip select signal.
RANK_SIZE = 0 (External Banks = 1)
RANK_SIZE = 1 (External Banks = 2)
RANK_SIZE = 2 (External Banks = 4)
RANK_SIZE = 3 (External Banks = 8)
0
Interface Type
The following Bus Interface Blocks are available for connecting this controller to dif-
ferent bus standards: PCI Target Interface, PowerPC Interface, AMBA_AHB Inter-
face, Generic Bus Interface.
Generic
Interface-Dependent Parameters
ASIZE_BIM
If PCI, AHB or PowerPC Interface Type is selected, this parameter defines the BIM
Address space. 32 bits
Fifo Depth
If PCI, AHB or PowerPC Interface Type is selected, this parameter defines the FIFO
Depth.
Varies by
Interface Type
Fifo Add Width
If PCI, AHB or PowerPC Interface Type is selected, this parameter defines the FIFO
Address Width.
Varies by
Interface Type
Mem Base Address
If PowerPC Interface Type is selected, this parameter defines the Memory Base
Address on the PowerPC Bus. 0
Mem Size
If PowerPC Interface Type is selected, this parameter defines the Memory Size on
the PowerPC Bus. 0
Reg Base Address
If PowerPC Interface Type is selected, this parameter defines the Register Base
Address on the PowerPC Bus. 0
Slave Select Bits
If AHB Interface Type is selected, this parameter defines the Slave Select Bits on the
AHB Bus. 2 bits
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Table 3. Dynamic DDR Core Parameters
Parameter Description Default Value
INIT
Initialize DDR. Initializes the DDR SDRAM when bit is set. Set by command in register. 0
TRCD Delay
RAS to CAS Delay. This is the delay from /RAS to /CAS in number of clock cycles and
is calculated using this formula INT(t
RCD(MIN)
/ t
CK
)*.
2
TRRD Delay
Row ACTIVE to Row ACTIVE Delay. This delay is in clock cycles and is calculated
using this formula INT(t
RRD(MIN)
/ t
CK
)*.
2
TRFC Delay
AUTO REFRESH command period. This delay is in clock cycles and is calculated using
this formula INT(t
RFC(MIN)
/ t
CK
)*.
9
TRP Delay
PRECHARGE command period. This is calculated by the formula INT(t
RP(MIN)
/ t
CK
)*. 2
TMRD Delay
LOAD MODE REGISTER command cycle time. This is calculated by the formula
INT(t
MRD(MIN)
/t
CK
)*.
2
TWR Delay
Write recovery time. This is calculated by the formula INT(t
WR(MIN)
/ t
CK
)*. 2
TRAS Delay
ACTIVE to PRECHARGE delay. Defines the delay between the ACTIVE and PRE-
CHARGE commands (maximum value = 15 clock cycles).
6
TWTR Delay
WRITE to READ command delay. Defines internal write to read command delay (maxi-
mum value = 7 clock cycles).
1
TRC Delay
ACTIVE to ACTIVE /AUTOREFRESH command delay. Defines ACTIVE to ACTIVE
/auto refresh command period delay (maximum value = 15 clock cycles).
8
CAS Latency
CAS Latency. Delay in clock cycles between the registration of a READ command and
the first bit of output data. Valid values are 1.5, 2.0, 2.5 and 3.0.
2
(2.0 clock cycles)
Burst Length
Burst Length. This number determines the maximum number of columns that can be
accessed for a given READ/WRITE and is equal to Burst Length programmed in the
Mode register. Valid values are 2, 4 and 8.
2
Burst Type
Burst Type. Specifies whether an interleaved or sequential burst is required. 0 repre-
sents a sequential and 1 represents an interleaved burst type.
0
DSTRENGTH
Drive Strength. Defines bit 1 in the Extended mode register. 0 represents normal drive
strength, 1 represents a reduced drive strength (required by some memory devices).
0
QFCFUNC
Defines bit 2 of the extended mode register which enables or disables the QFC func-
tion (required by some memory devices).
0
Refresh Period
Refresh Period. Defines maximum time period between AUTOREFRESH commands.
Calculate as follows: INT(t
REF
/ t
CK
)*.
2228
*Notes:
t
CK
= Clock cycle time
t
RCD(MIN)
= ACTIVE to READ or WRITE delay
t
RRD(MIN)
= ACTIVE (bank A) to ACTIVE (bank B) command period
t
RFC(MIN)
= AUTOREFRESH command period (min.)
t
RP(MIN)
= PRECHARGE command period
t
MRD(MIN)
= LOAD_MR command cycle time
t
WR(MIN)
= Write recovery time
t
REF
= AUTOREFRESH command interval (max.)
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Signal Descriptions
The following tables show the different interface signals for the DDR SDRAM controller. The DDR SDRAM Interface
signals are the same for all core configurations.
Table 4. DDR SDRAM Interface Bus Signals
Table 5. User Generic Interface Bus Interface Signals
Signal Name Direction Active State Description
ddr_clk
Output N/A DDR SDRAM Clock, derived from the system clock.
NOTE:
If multiple memory banks are used (RANK_SIZE > 0),
then additional clock signals will be needed at the
project's top level to drive each individual memory
bank.
ddr_clk_n
Output N/A Inverted DDR SDRAM Clock, derived from the system
clock.
NOTE: If multiple memory banks are used
(RANK_SIZE > 0), then additional clock signals will be
needed at the project's top level to drive each individual
memory bank.
ddr_cke
Output High Clock enable.
ddr_cs_n [(2
RANK_SIZE)
- 1:0]
Output N/A Active Low Chip Select. Selects and deselects the DDR
SDRAM external bank.
ddr_we_n
Output Low Write Enable. Defines the part of the command being
entered.
ddr_cas_n
Output Low Column Select. Defines the part of the command being
entered.
ddr_ras_n
Output Low Row select. Defines the part of the command being entered.
ddr_ad[RSIZE-1:0]
Output N/A Row or column address lines depending whether the /RAS
or /CAS is active.
ddr_ba[BSIZE-1:0]
Output N/A Bank Address Select.
ddr_dq[DSIZE/2-1:0]
In/Out N/A Bi-directional Data Bus.
ddr_dqm[DSIZE/16-1:0]
Output N/A Data mask signals used to mask the byte lanes for byte level
write control.
ddr_dqs[DSIZE/16-1:0]
In/Out N/A Data strobe signals used by memory to latch the write data.
Signal Name Direction Active State Description
clk
Input N/A System clock.
reset_n
Input Low System reset.
cmd[2:0]
Input N/A Command for controller.
datain[DSIZE-1:0]
Input N/A Data input. DSIZE is a programmable parameter of 32, 64, or
128.
addr[ASIZE-1:0]
Input N/A Address for read/write. ASIZE is based on size of memory, which
is derived by the following formula: ASIZE = RANK_SIZE +
RSIZE + BSIZE + CSIZE.
dmsel[DSIZE/8-1:0]
Input N/A Data Mask select.
busy
Output High Busy signal indicates the controller will not accept any more com-
mands.
dataout[DSIZE-1:0]
Output N/A Data out.
dataout_valid
Output High During a read, this signal indicates when the dataout bus from
the controller contains valid data.
datain_valid Output High This signal indicates when the user can start sending in data
through datain bus during a write.
clk2x Input N/A This is the doubled clock signal coming from the on-chip PLL.
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Table 6. Power PC Bus Interface Signals
Signal Name Direction Active State Description
clk In N/A System Clock.
reset_n In LOW System Reset.
ppc_aack_n Out LOW Address Acknowledge. When asserted, this signal indicates
the address phase of the transaction is complete.
ppc_addr[0:ASIZE_BIM] In N/A Address Bus. Address received from a bus master after
receiving a bus grant.
ppc_data_l[0:31] I/O N/A Low Data Bus.
ppc_data_h[0:31] I/O N/A High Data Bus.
ppc_artry_n In LOW Address Retry. This signal indicates the current cycle is
aborted and the bus master will issue a request at a later
time.
ppc_dbb_n In LOW Data Bus Busy. The bus master that has received a data bus
grant issues this signal. This signal indicates the length the
data bus will be used for a memory access.
ppc_ta_n Out LOW Transfer Acknowledge. This signal indicates the data transfer
on the PowerPC bus has been completed.
ppc_tbst_n In LOW Transfer Burst. This signal indicates a burst transfer is in
progress.
ppc_tea_n Out LOW Transfer Error Acknowledge. This signal indicates an error
has occurred during a data transfer.
ppc_ts_n In LOW Transfer Start. This signal indicates the master has begun a
memory bus transaction, and the address and transfer
attributes are valid.
ppc_tsiz[0:2] In LOW Transfer Size.
ppc_tt[0:4] In LOW Transfer Type.
clk2x In N/A This the doubled clock signal coming from the on-chip PLL.
Table 7. PCI Local Bus Interface Signals
Signal Name Direction Active Description
clk In N/A PCI System Clock.
reset_n In LOW Asynchronous PCI Reset.
l_data_in[DSIZE-1:0] Out N/A Local Address/Burst Length/Data Input. The address/burst
length input is used in master transactions. The data input is
used for a master write or for a target read.
l_data_out[DSIZE-1:0] In N/A Local data output for a master read or a target write.
lt_address_out[ASIZE_BIM-
1:0]
In N/A Local starting address output for target reads and writes.
lt_ben_out[DSIZE/8-1:0] In N/A Local target byte enables.
lt_command_out[3:0] In N/A Local command for target reads and writes.
lt_abortn Out LOW Local target abort request.
lt_disconnectn Out LOW Local target disconnect or retry.
l_interruptn Out LOW Local side interrupt request (multi-function device may need
additional IRQ signals).
lt_rdyn Out LOW Local target ready to receive data (write) or send data (read).
lt_r_nw In HIGH Read/Write# (read/not write). Signals whether the current
transaction is a read or write.
cache[7:0] In N/A Local target controller cache register output.
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Table 8. AMBA Bus Interface Signals
status[5:0] In N/A Local target controller status register.
lt_hdata_xfern In LOW Memory or I/O high DWORD read or write data phase com-
plete. The address counter can be incremented in combina-
tion with the lt_ldataxfern.
lt_ldata_xfern In LOW Memory or I/O low DWORD read or write data phase com-
plete. The address counter can be incremented in combina-
tion with the lt_hdataxfern.
exprom_hit In HIGH Expansion ROM register hit.
bar_hit[5:0] In N/A Signals that the current address is within one of the base
address register ranges, and access is requested until the
current cycle is done (multi-function devices will need an
additional set of registers for each function).
lt_64bit_transn In LOW Signals the local target that a 64-bit read or write transaction
is underway.
clk2x In N/A This is the doubled clock signal coming from the on-chip PLL.
Signal Name Direction
Active
State Description
clk In N/A Bus Clock. This clock times all bus transfers. All signal timings are related to
the rising edge of clk.
reset_n In LOW The bus reset signal is active LOW and is used to reset the system and the
bus. This is the only active LOW signal.
HADDR[ASIZE_BIM-1:0] In N/A The 32-bit system address bus.
HTRANS[1:0] In N/A Transfer type. This indicates the type of the current transfer, which can be
NONSEQUENTIAL, SEQUENTIAL, IDLE or BUSY.
HWRITE In HIGH Transfer direction. When HIGH, this signal indicates a write transfer. When
LOW, it indicates a read transfer.
HSIZE[2:0] In N/A Transfer size. Indicates the size of the transfer, which is typically byte (8-bit),
half word (16-bit), word (32-bit) or double word (64-bit) for a 64-bit AHB Bus.
HBURST[2:0] In N/A Burst type. Indicates if the transfer forms part of a burst. Four, eight and six-
teen beat bursts are supported. The burst may be either incremental or wrap-
ping.
HWDATA[DSIZE-1:0] In HIGH Write data bus. The write data bus is used to transfer data from the master to
the bus slaves during write operations.
HSELx In HIGH Slave select. This signal indicates that the current transfer is intended for the
slave. This signal is a combinatorial decode of the address bus.
HSELregx In HIGH This signal indicates the current transfer is meant for internal registers of the
Bus Interface Block. This is valid only when HSELx is asserted.
HSELmemx In HIGH This signal indicates the current transfer is meant for DDR memory data. This
is valid only when HSELx is asserted.
HREADY In HIGH Transfer done. When HIGH, the HREADY signal indicates that a transfer has
finished on the bus.
HRDATA[DSIZE-1:0] Out N/A Read data bus. The read data bus is used to transfer data from bus slaves to
the bus master during read operations.
HREADY_out Out HIGH Transfer done. When high, the HREADY_out signal indicates that a transfer
has finished on the bus. This signal may be driven LOW to extend a transfer.
HRESP[1:0] Out N/A Transfer response. The transfer response provides additional information on
the status of a transfer. Four different responses are possible: OKAY, ERROR,
RETRY and SPLIT. RETRY and SPLIT are not supported.
clk2x In N/A This is the doubled clock signal coming from the on-chip PLL.
Table 7. PCI Local Bus Interface Signals (Continued)
Signal Name Direction Active Description
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Timing Specifications
Figure 5. Generic I/F Timing Diagram
Figure 6. Read Followed By Read (Same Bank Same Row) With BL = 2
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Figure 7. Read Followed by Read (Same Bank Different Row) With BL = 2
Figure 8. Read Followed by Read (Different Bank Row Open BL = 2)
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Figure 9. Read followed by Read (Different Bank Row Open Row Close BL = 2)
Figure 10. Read Followed by Read (Different Bank Row Closed BL = 2)
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Figure 11. Write Followed by Write (Same Bank Same Row BL = 2)
Figure 12. Write Followed by Write (Same Bank Different Row BL = 2)
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Figure 13. Write Followed by Write (Different Bank Row Open BL = 2)
Figure 14. Write Followed by Write (Different Bank Row Open BL = 2)
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Figure 15. Write Followed by Write (Different Bank Row Open Row Close BL = 2)
Figure 16. Write Followed by Write (Different Bank Row Open Row Close BL = 2)
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Figure 17. Power Down
Figure 18. Self Refresh
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Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Command Descriptions and Usage
This section describes the commands supported and their usage at the generic interface block.
NOP
This command is issued when the interface is waiting to issue commands. This command does not perform any
operation on the DDR SDRAM.
READ
This command is issued when a READ is required form a memory location. The address is comprised of rank num-
ber and absolute address. The absolute address is formed by the row, bank and column addresses.
This read command automatically applies ACTIVATE, READ and PRECHARGE commands to the DDR SDRAM
by looking at the bank and row address.
Once a READ command is issued, the dataout bus will contain valid read data when the dataout_valid signal
is high.
WRITE
This command is issued when a WRITE is required from a memory location. The address is composed of rank
number and absolute address. The absolute address is formed by the row, bank and column addresses.
The WRITE command automatically applies ACTIVATE, READ and PRECHARGE commands to the DDR SDRAM
by looking at the bank and row address.
After a WRITE command is issued, the controller accepts the data to be written from the datain bus when the
datain_valid signal is high.
SELF REFRESH
The SELF REFRESH command is issued to retain the data in the DDR SDRAM. This can be issued even if the rest
of the system is powered down. In this mode, the DDR SDRAM retains data without applying an external clock sig-
nal. During this command, the address is “don’t care” since all the DDR SDRAM devices enter self-refresh mode.
Once the command is given, the DDR Controller enters the self-refresh mode. The DDR Controller will remain in
this mode until another SELF REFRESH command is sent. All other user commands are ignored while the DDR
Controller is in the self-refresh mode.
Command Name Cmd[2:0]
Addr[‘ASIZE-1:0]
Rank Absolute Address
NOP 000 Rank Number xxxx (Don’t Care)
Command Name Cmd[2:0]
Addr[‘ASIZE-1:0]
Rank Row, Bank, Column
READ 001 Rank Number Absolute Address
Command Name Cmd[2:0]
Addr[‘ASIZE-1:0]
Rank Row, Bank, Column
WRITE 010 Rank Number Absolute Address
Command Name Cmd[2:0]
Addr[‘ASIZE-1:0]
Rank Row, Bank, Column
SELF REFRESH 110 xxxx xxxx (Don’t Care)
20
Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Load_MR
The Load_MR command is issued to program either the Mode Register or Extended Mode Register depending on
the BA1:BA0 bits in the address.
BA1:BA0 = 00 Addresses the Mode Register
BA1:BA0 = 01 Addresses the Extended Mode Register
Once the Mode register is programmed, the CFG0 register in the controller is also updated
POWER DOWN
The POWER DOWN command is issued to make the DDR SDRAM enter power down mode. The Controller auto-
matically wakes up the DDR SDRAM, then puts the DDR SDRAM back into power down mode.
Once the command is given, the DDR Controller enters power-down mode. The power-down mode (and the DDR
SDRAM) remains in power-down mode until another POWER DOWN command is sent. All other user commands
are ignored while the DDR is in power-down mode.
Load_CFG
The Load_CFG command is used to program the Controller CFG0, CFG1, CFG2 and CFG3 registers. The control-
ler register is selected with the A1:A0 bits in the address as shown in the table below.
The Load_CFG command can be used before the initialization of the DDR Controller.
Once the CFG0 is programmed, the Mode Register in the DDR SDRAM is also updated.
The A[19:2] maps to the register (refer to the next section on Configuration Registers).
Command Name Cmd[2:0]
Addr[‘ASIZE-1:0]
Rank Addr[‘ASIZE-1:14] Addr[13:12] Addr[11:0]
Load_MR 100 xxxx xxxx BA1:BA0 A11:A0
Command Name Cmd[2:0]
Addr[‘ASIZE-1:0]
Rank Row, Bank, Column
POWER DOWN 101 xxxx xxxx (Don’t Care)
A[1:0] Configuration Register Selected
00 CFG0
01 CFG1
10 CFG2
11 CFG3
Command Name Cmd[2:0]
Addr[‘ASIZE-1:0]
Rank Addr[‘ASIZE-1:20] Addr[19:2] Addr[1:0]
Load_CFG 011 xxxx xxxx A[19:2] A1:A0
21
Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Configuration Registers
There are four Configuration registers in the DDR Controller: CFG0, CFG1, CFG2 and CFG3. These registers are
selected using the Load_CFG command (see above). The A1 and A0 address bits determine the CFG register
being addressed. A2 to A19 contain the data to be loaded into the selected register. See the description of the
Load_CFG command for more information.
Configuration Register 0
The Configuration Register 0 (CFG0) is used to modify the DDR SDRAM Controller timing and behavior. Table 9
describes the contents of CFG0. When any change is made to this register, the DDR Controller automatically
updates the DDR SDRAM mode register. The DDR SDRAM mode register is also updated when the DDR Control-
ler receives a LOAD MODE REG command.
The user can program the Burst Length, Burst Type, and CAS Latency bits or use the default values without
any programming.
After the power up condition is satisfied (all power supply and reference voltages are stable at approximately
200µs), the user triggers initialization of the DDR SDRAM by setting the INIT bit using the Load_CFG command.
Once this bit is set, the controller starts the initialization process. The busy signal is held high until the initialization
process is completed.
The default values for this register are set in the Verilog parameters file.
Table 9. Configuration Register 0 (CFG0)
Configuration Bits Parameter Description
CFG0[2:0] Burst Length
Burst Length, valid values are 2, 4 and 8.
001b = 2
010b = 4
011b = 8
All others are reserved. Default value is Burst Length parameter.
CFG0[3] Burst Type
Burst Type, Sequential / Interleaved
0 = Sequential
1 = Interleaved
Default value is Burst Type parameter
CFG0[6:4] CAS Latency
CAS Latency in number of clock cycles.
101b = 1.5
010b = 2.0
110b = 2.5
011b = 3.0
Default value is CAS Latency parameter
CFG0[7] INIT Initialize the DDR SDRAM when this bit is set. Default value is 0.
CFG0[19:8] Reserved These bits are reserved. Default value is unknown.
22
Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Configuration Register 1
The Configuration Register 1 (CFG1) is used to modify the DDR SDRAM Controller timing and behavior. The cor-
rect settings will depend on the DDR SDRAM being used with the controller. Table 10 shows the contents of CFG1.
Configuration Register 2
The Configuration register 2 (CFG2) contains the 16 bits used to store the Refresh Period (RP). The DDR Control-
ler regularly issues AUTO REFRESH commands to the DDR SDRAM during normal operation mode. Table 11
shows the contents of CFG2.
Table 11. Configuration Register 2 (CFG2)
Configuration Register 3
The Configuration register 3 (CFG3) is used to modify the DDR SDRAM Controller timing and behavior. The cor-
rect settings will depend on the DDR SDRAM being used with the controller. Table 12 shows the contents of CFG3.
Table 12. Configuration Register 3 (CFG3)
Table 10. Configuration Register 1 (CFG1)
Configuration Bits Parameter Description
CFG1[2:0] TRCD Delay RAS to CAS Delay in number of clocks (maximum value 7 clocks). Default
value is TRCD Delay parameter
CFG1[5:3] TRRD Delay Active bank A to active bank B command (maximum value 7 clocks). Default
value is TRRD Delay parameter
CFG1[9:6] TRFC Delay AUTO REFRESH command delay period in number of clocks (maximum value
15 clocks). Default value is TRFC Delay parameter
CFG1[12:10] TRP Delay PRECHARGE Command period (maximum value 7 clocks). Default value is
TRP Delay parameter
CFG1[15:13] TMRD Delay LOAD MODE REGISTER Command period (maximum value 7 clocks). Default
value is TMRD Delay parameter
CFG1[18:16] TWR Delay Write recovery time (maximum value 7 clocks). Default value is TWR Delay
parameter
CFG1[19] Reserved This bit is reserved. Default value is unknown.
Configuration Bits Parameter Description
CFG2[15:0] Refresh
Period
Refresh Period (max. = tCK * FFFFh). Default value is Refresh Period parame-
ter.
CFG2[19:16] Reserved These bits are reserved. Default value is unknown.
Configuration Bits Parameter Description
CFG3[3:0] TRAS Delay Active to pre-charge command (maximum value of 15 clocks). Default value is TRAS
Delay parameter.
CFG3[6:4] TWTR Delay Internal write to read command delay (maximum value of 7 clocks). Default value is
TWTR Delay parameter.
CFG3[10:7] TRC Delay Active to Active/AUTO REFRESH command delay period in number of clocks (maxi-
mum value of 15 clocks). Default value is TRC Delay parameter.
CFG3[19:11] Reserved These bits are reserved. Default value is unknown.
23
Double Data Rate (DDR) SDRAM Controller
Lattice Semiconductor (Pipelined Version) User’s Guide
Before going to the Place and Route, the user needs to run edifmod.pl provided in the package to generate a new
EDIF netlist. Installation of Perl programming software is required before running the script (edifmod.pl) provided.
To download Perl programming software, please visit www.activeperl.com for the latest version of the software. The
script (edifmod.pl) will allow user to insert the I/O types property to the specific instances that declare in the port
inside the EDIF netlist. The current LeonardoSpectrum synthesis tool only inserts I/O type property on ports and
the ispLEVER software requires the I/O type property inserted on the instances. Therefore, the script (edifmod.pl)
is provided to work around the problem.
Open DOS-shell, change directory to where the EDIF netlist located and type:
perl edifmod.pl <EDIF name>.edf
By running the edifmod.pl provided, it will generate a new EDIF netlist as <EDIF name>.edf.new. The new EDIF
netlist need to be renamed to <new EDIF name>.edf before importing the netlist.
References
• Double Data Rate (DDR) SDRAM Data Sheet, Micron Technology, Inc., 2001.
• 128 M-bit Synchronous DRAM with Double Data Rate Data Sheet, NEC Corp., December 1998.
• DDR SDRAM Specification Version 0.3, Samsung Electronics, 2000.
• DDR SDRAM Controller Data Sheet, Lattice Semiconductor Corporation, 2003.
• ispLeverCORE™ Evaluation Tutorials, Lattice Semiconductor Corp., 2003.
Technical Support Assistance
Hotline: 1-800-LATTICE (North America)
+1-408-826-6002 (Outside North America)
e-mail: techsupport@latticesemi.com
Internet: www.latticesemi.com
The following procedure is required for the ORCA® Series 4 version of this IP core. For other device versions,
refer to the Readme release notes included in that evaluation package.
Mouser Electronics
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DDRCT-PPC-5X-N1 DDRCT-PPC-O4-N1 DDRCT-PPC-XP-N1 DDRCT-GEN-P2-U6 DDRCT-NP-XM-N3 DDRCT-
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