BTA206-800ET,127"" - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic

package. This "series ET" triac balances the requirements of commutation performance

and gate sensitivity and is intended for interfacing with low power drivers including

microcontrollers. It is used where "high junction operating temperature" capability (Tj =

150 °C) is required.

1.2 Features and benefits

3Q technology for improved noise

immunity

Direct interfacing with low power

drivers and microcontrollers

Good immunity to fals e tu rn -o n by

dV/dt

High commutation capability with

sensitive gate

High junction operating temperature

capability

High voltage capability

Planar passivated for voltage

ruggedness and reliability

Sensitive gate for easy logic level

triggering

Triggering in three quadrants only

1.3 Applications

Applications subject to high

temperature

Electronic thermostats (heating and

cooling)

Motor controls for home appliances

Refrigeration and air-conditioner

compressor controls

1.4 Quick reference data

BTA206-800ET

3Q Hi-Com Triac

Rev. 2 — 15 December 2011 Product data sheet

TO-220AB

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-state voltage - - 800 V

ITSM non-repetitive peak on-state current full sine wave; Tj(init) =25°C;

tp=20ms; see Figure 4;

see Figure 5

--60A

Tjjunction temperature - - 150 °C

IT(RMS) RMS on-state current full sine wave; Tmb ≤134 °C;

see Figure 1; see Figure 2;

see Figure 3

--6A

Product data sheet Rev. 2 — 15 December 2011 2 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

2. Pinning information

3. Ordering information

Static characteristics

IGT gate trigger current VD=12V; I

T= 0. 1 A; T2+ G+;

Tj=25°C; see Figure 7 --10mA

VD=12V; I

T= 0.1 A; T2+ G-;

Tj=25°C; see Figure 7 --10mA

VD=12V; I

T= 0.1 A; T2- G-;

Tj=25°C; see Figure 7 --10mA

Dynamic characteristics

dVD/d t rate of rise of off-state voltage VDM = 536 V; Tj=150°C;

(VDM = 67% of VDRM); exponential

waveform; gate open circuit

50--V/µs

dIcom/dt rate of change of commutating

current VD=400V; T

j= 150 °C;

IT(RMS) =6A; dV

com/dt = 1 V/µs;

gate open circuit

5--A/ms

Table 1. Quick reference data …continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1

SOT78 (TO-220AB)

2 T2 main terminal 2

3 G gate

mb T2 mounting ba se ; main terminal 2

sym051

Table 3. Ordering information

Type number Package

Name Description Version

BTA206-800ET TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB SOT78

Product data sheet Rev. 2 — 15 December 2011 3 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage - 800 V

IT(RMS) RMS on-state current full sine wave; Tmb ≤134 °C; see Figure 1;

see Figure 2; see Figure 3 -6A

ITSM non-repetitive peak on-state

current full sine wave; Tj(init) =25°C; t

p= 20 ms;

see Figure 4; see Figure 5 -60A

full sine wave; Tj(init) =25°C; t

p=16.7ms - 66 A

I2tI

2t for fusing tp= 10 ms; sine-wave pulse - 18 A2s

dIT/dt rate of rise of on-state current IT=10A; I

G= 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs

IGM peak gate current - 2 A

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 150 °C

Fig 1. RMS on-state current as a function of surge

duration; maximum values Fig 2. RMS on-state current as a function of mounting

base temperature; maximum values

003aag655

-2

-1

1 10

surge duration (s)

IT(RMS)

(A)

Tmb (°C)

-50 150100050

003aag548

IT(RMS)

(A)

134 °C

Product data sheet Rev. 2 — 15 December 2011 4 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

Fig 3. Total power dissipation as a function of RMS on-state current; maximum values

Fig 4. No n-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

003aag551

Ptot

(W)

IT(RMS) (A)

0 7.563 4.51.5

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

Tmb(max)

(°C)

120

α = 180°

150

148

146

144

142

140

138

136

134

132

130

003aag541

ITSM

number of cycles

1103

102

(A)

TSM

j(init)

= 25 °C max

Product data sheet Rev. 2 — 15 December 2011 5 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

Fig 5. No n-repetitive peak on-state current as a function of pulse width ; maximum value s

003aag542

tp (ms)

10-2 102

1010-1 1

102

103

ITSM

(A)

(1)

TSM

j(init)

= 25 °C max

Product data sheet Rev. 2 — 15 December 2011 6 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to mounting

base full cycle; see Figure 6 --2K/W

half cycle; see Figure 6 --2.4K/W

Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W

Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width

003aaf584

tp (s)

10−511010−1

10−2

10−410−3

10−1

Zth(j-mb)

(K/W)

10−2

unidirectional

bidirectional

Product data sheet Rev. 2 — 15 December 2011 7 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD=12V; I

T= 0.1 A; T2+ G+;

Tj=25°C; see Figure 7 --10mA

VD=12V; I

T= 0.1 A; T2+ G- ; Tj=25°C;

see Figure 7 --10mA

VD=12V; I

T= 0.1 A; T2- G-; Tj=25°C;

see Figure 7 --10mA

ILlatching current VD=12V; I

G= 0.1 A; T2+ G+;

Tj=25°C; see Figure 8 --25mA

VD=12V; I

G= 0.1 A; T2+ G-; Tj=25°C;

see Figure 8 --30mA

VD=12V; I

G= 0.1 A; T2- G-; Tj=25°C;

see Figure 8 --25mA

IHholding current VD=12V; T

j=25°C; see Figure 9 --15mA

VTon-state voltage IT= 7 A; see Figure 10 -1.31.6V

VGT gate trigger voltage VD=12V; I

T=0.1A; T

j=25°C;

see Figure 11 -0.81.5V

VD= 400 V; IT= 0.1 A; Tj= 150 °C 0.25 - - V

IDoff-state curre nt VD= 800 V; Tj=150°C - 0.4 2 mA

Dynamic characteristics

dVD/dt rate of rise of off-state voltage VDM =536V; T

j=150°C; (V

DM = 67% of

VDRM); exponential waveform; gate open

circuit

50--V/µs

dIcom/dt rate of change of

commutating current VD= 400 V; Tj=150°C; I

T(RMS) =6A;

dVcom/dt = 20 V/µs; (snubberless

condition); gate open circuit

1--A/ms

VD= 400 V; Tj=150°C; I

T(RMS) =6A;

dVcom/dt = 10 V/µs; gate open circuit 2--A/ms

VD= 400 V; Tj=150°C; I

T(RMS) =6A;

dVcom/dt = 1 V/µs; gate open circuit 5--A/ms

Product data sheet Rev. 2 — 15 December 2011 8 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

(1) T2- G-

(2) T2+ G-

(3) T2+ G+

Fig 7. Normalized gate trigger cu rrent as a function of

junction temperature Fig 8. Normalized latching current as a function of

junction temperature

Vo = 1.184 V; Rs = 0.047 Ω

(1) Tj = 150 °C; typical values

(2) Tj = 150 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig 9. Normalized holding current as a function of

junction temperature Fig 10. On-state current as a function of on-state

voltage

Tj (°C)

-50 150100050

003aag543

(1)

(2)

(3)

IGT

IGT(25°C)

Tj (°C)

-50 150100050

003aag544

IL(25°C)

Tj (°C)

-50 150100050

003aag545

IH(25°C)

003aag546

VT (V)

0321

(A)

(1) (2) (3)

Product data sheet Rev. 2 — 15 December 2011 9 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

Fig 11. Normalized gate trigger voltage as a function of junction temp eratu re

Tj (°C)

-50 150100050

003aag547

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

Product data sheet Rev. 2 — 15 December 2011 10 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

7. Package outline

Fig 12. Package outline SOT78 (TO-220AB)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT78

08-04-23

08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm 4.7

4.1 1.40

1.25 0.9

0.6 0.7

0.4 16.0

15.2 6.6

5.9 10.3

9.7 15.0

12.8 3.30

2.79 3.8

3.5

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.6

1.0

c D

1.3

1.0

b2(2) D1E e

2.54

L L1(1) L2(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

123

L1(1)

b1(2)

(3×)

b2(2)

(2×)

b(3×)

L2(1)

mounting

base

Product data sheet Rev. 2 — 15 December 2011 11 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BTA206-800ET v.2 20111215 Product data sheet - BTA206-800ET v.1

Modifications: •Various changes to content.

BTA206-800ET v.1 20110823 Product data sheet - -

Product data sheet Rev. 2 — 15 December 2011 12 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in t his documen t may have changed since this documen t was publish ed and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre vail.

Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyon d those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersed es an d r eplaces all inf ormation supplied pri or

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference dat a is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associate d with t heir

applications and products.

NXP Semiconductors does not accept any liabil ity related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the appl ication or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and pro ducts using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress rating s only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Product i on This document contains the product specification.

Product data sheet Rev. 2 — 15 December 2011 13 of 14

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

Te rms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercia l

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individua l

agreement is concluded only the terms and conditions of the respect ive

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by custome r.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might requir e a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors prod uct is automotive qualified,

the product is not suitable for automo tive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and st andards, customer

(a) shall use the product without NXP Semicond uctors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BTA206-800ET

3Q Hi-Com Triac

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 15 December 2011

Document identifier: BTA206-800ET

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .6

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .7

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13