DSS45160FDB 60V COMPLEMENTARY NPN/PNP LOW VCE(sat) TRANSISTOR Features Mechanical Data Case: U-DFN2020-6 UL Flammability Rating 94V-0 Case Material: Molded Plastic. "Green" Molding Compound. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) Complementary NPN/PNP NPN Transistor BVCEO > 60V IC = 1A high Continuous Collector Current Low Saturation Voltage VCE(sat) < 220mV @ 1A PNP Transistor BVCEO > -60V IC = -1A high Continuous Collector Current Low Saturation Voltage VCE(sat) < -340mV @ -1A PD up to 2.47W for power demanding applications RJA efficient, 40% lower than SOT26 Low profile 0.6mm high package for thin applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Application Gate Driving Load Switches Power Management Charging Circuits Power Switches (e.g. Motors, Fans) U-DFN2020-6 6 5 C1 4 B2 E2 6 C2 C1 1 1 2 3 E1 C2 Top View Pin-Out Device Symbol Bottom View B1 Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DSS45160FDB-7 2C 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 2C YWX DSS45160FDB Datasheet Number: DS37802 Rev.1 - 2 2C = Product type Marking Code Y = Year: 0~9 W = Week: A~Z : 1~26 week; a~z; 27~52 week; z represents 52 and 53 week X = A~Z: Internal code 1 of 9 www.diodes.com December 2015 (c) Diodes Incorporated DSS45160FDB Absolute Maximum Ratings - Q1 and Q2 (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Base Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM NPN 60 60 7 1 1.5 300 1 PNP -60 -60 -7 -1 -1.5 -300 -1 Unit V V V A A mA A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol (Notes 5 & 7) (Notes 5 & 8) (Notes 6 & 7) (Notes 6 & 8) (Notes 5 & 7) (Notes 5 & 8) (Notes 6 & 7) (Notes 6 & 8) (Note 9) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Value 405 510 1650 2470 308 245 76 51 18 -55 to +150 PD RJA RJL TJ, TSTG Unit mW C/W C/W C ESD Ratings (Note 10) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm2) 2oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. VCE(sat) 1 Limit DC 100m 1s 10ms Single Pulse T amb=25C 1ms 100s See note 5 &7 1m 100m VCE(sat) 1 Limit DC 100m 100ms 10m -IC Collector Current (A) IC Collector Current (A) Thermal Characteristics and Derating Information 1 10 VCE Collector-Emitter Voltage (V) 100ms 10m 10ms Single Pulse T amb=25C Datasheet Number: DS37802 Rev.1 - 2 1ms 100s See note 5 & 7 1m 0.1 1 10 -VCE Collector-Emitter Voltage (V) NPN Safe Operating Area DSS45160FDB 1s PNP Safe Operating Area 2 of 9 www.diodes.com December 2015 (c) Diodes Incorporated DSS45160FDB Thermal Characteristics and Derating Information Max Power Dissipation (W) 2.5 Note 6 & 8 2.0 Note 6 & 7 1.5 Note 5 & 7 1.0 Note 5 & 8 0.5 0.0 0 20 40 60 80 100 120 140 160 Temperature (C) 330 300 T amb=25C 270 See note 5 & 7 240 210 180 D=0.5 150 120 90 D=0.2 60 30 0 100 1m 10m 100m 100 Maximum Power (W) Thermal Resistance (C/W) Derating Curve Single Pulse D=0.05 D=0.1 1 10 100 Single Pulse T amb=25C 1 0.1 100 1k 1m Pulse Width (s) 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 100 70 Maximum Power (W) 80 Thermal Resistance (C/W) See note 5 & 7 10 T amb=25C 60 See note 6 & 7 50 D=0.5 40 30 D=0.2 Single Pulse 20 D=0.05 10 D=0.1 0 100 1m 10m 100m 1 10 100 1k Single Pulse T amb=25C See note 6 & 7 10 1 100 Datasheet Number: DS37802 Rev.1 - 2 10m 100m 1 10 100 1k Pulse Power Dissipation Transient Thermal Impedance DSS45160FDB 1m Pulse Width (s) Pulse Width (s) 3 of 9 www.diodes.com December 2015 (c) Diodes Incorporated DSS45160FDB Electrical Characteristics - Q1 NPN (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 11) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO Emitter-Base Cutoff Current IEBO DC Current Gain (Note 11) hFE Collector-Emitter Saturation Voltage (Note 11) VCE(sat) Min 60 60 7 290 150 70 Typ 430 220 110 90 170 Max 100 50 100 120 220 185 180 240 240 1 1.1 1.1 0.9 Unit V V V nA A nA mV Equivalent On-Resistance (Note 11) RCE(sat) Base-Emitter Saturation Voltage (Note 11) VBE(sat) Base-Emitter Turn-on Voltage (Note 11) VBE(on) fT 90 175 MHz Cob (c) ton td tr toff ts tf 4 105 15 90 540 410 130 6 pF ns ns ns ns ns ns Transition Frequency Output (Collector) Capacitance Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Note: m V V Test Conditions IC = 100A IC = 10mA IE = 100A VCB = 48V, IE = 0 VCB = 48V, IE = 0, TA = +150C VEB = 5.6V, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA VCE = 2V, IC = 1A IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 50mA IC = 500mA, IB = 50mA IC = 0.5A, IB = 50mA IC = 1A, IB = 50mA IC = 1A, IB = 100mA VCE = 2V, IC = 0.5A VCE = 10V, IC = 50mA, f = 100MHz VCB = -10V, f = 1MHz VCC = -10V, IC = -0.5A, IB1 = -IB2 = 25mA 11. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. DSS45160FDB Datasheet Number: DS37802 Rev.1 - 2 4 of 9 www.diodes.com December 2015 (c) Diodes Incorporated DSS45160FDB Electrical Characteristics - Q2 PNP (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 11) Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO Emitter-Base Cutoff Current IEBO DC Current Gain (Note 11) hFE Collector-Emitter Saturation Voltage (Note 11) VCE(sat) Min -60 -60 -7 170 120 70 Typ Max -100 -50 -100 -180 -340 -550 Unit V V V nA A nA 360 -1 -1.0 -1.1 -0.9 m mV Equivalent On-Resistance (Note 11) RCE(sat) Base-Emitter Saturation Voltage (Note 11) VBE(sat) Base-Emitter Turn-on Voltage (Note 11) VBE(on) Transition Frequency fT 65 MHz Output Capacitance Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Cob ton td tr toff ts tf 75 35 40 265 230 35 15 pF ns ns ns ns ns ns Note: V V Test Conditions IC = -100A IC = -10mA IE = -100A VCB = -48V, IE = 0 VCB = -48V, IE = 0, TA = +150C VEB = -5.6V, IC = 0 VCE = -2V, IC = -100mA VCE = -2V, IC = -500mA VCE = -2V, IC = -1A IC = -500mA, IB = -50mA IC = -1A, IB = -100mA IC = -1A, IB = -50mA IC = -500mA, IB = -50mA IC = -0.5A, IB = -50mA IC = -1A, IB = -50mA IC = -1A, IB = -100mA VCE = -2V, IC = -0.5A VCE = -10V, IC = -50mA, f = 100MHz VCB = -10V, f = 1MHz VCC = -10V, IC = -0.5A, IB1 = -IB2 = 25mA 11. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. DSS45160FDB Datasheet Number: DS37802 Rev.1 - 2 5 of 9 www.diodes.com December 2015 (c) Diodes Incorporated DSS45160FDB Typical Electrical Characteristics - Q1 NPN (@TA = +25C, unless otherwise specified.) DSS45160FDB Datasheet Number: DS37802 Rev.1 - 2 6 of 9 www.diodes.com December 2015 (c) Diodes Incorporated DSS45160FDB Typical Electrical Characteristics - Q2 PNP (@TA = +25C, unless otherwise specified.) DSS45160FDB Datasheet Number: DS37802 Rev.1 - 2 7 of 9 www.diodes.com December 2015 (c) Diodes Incorporated DSS45160FDB Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. A A3 A1 Seating Plane U-DFN2020-6 D D2 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k 0.45 L 0.25 0.35 0.30 z 0.225 z1 0.175 All Dimensions in mm D2 R0.1 50 (Pin # 1 ID) E z1 E2 z1 k L e z b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. X2 C Dimensions C G G1 X X1 X2 Y Y1 Y2 X1(2x) Y2 Y1(2x) G G1 Value (in mm) 0.650 0.150 0.450 0.350 0.600 1.650 0.500 1.000 2.300 Y X DSS45160FDB Datasheet Number: DS37802 Rev.1 - 2 8 of 9 www.diodes.com December 2015 (c) Diodes Incorporated DSS45160FDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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