DSS45160FDB-7 - DIODES INC - Datasheet.Directory

DSS45160FDB

Datasheet Number: DS37802 Rev.1 - 2

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December 2015

DSS45160FDB

Features

 Complementary NPN/PNP

 NPN Transistor

- BVCEO > 60V

- IC = 1A high Continuous Collector Current

- Low Saturation Voltage VCE(sat) < 220mV @ 1A

 PNP Transistor

- BVCEO > -60V

- IC = -1A high Continuous Collector Current

- Low Saturation Voltage VCE(sat) < -340mV @ -1A

 PD up to 2.47W for power demanding applications

 RθJA efficient, 40% lower than SOT26

 Low profile 0.6mm high package for thin applications

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Application

 Gate Driving

 Load Switches

 Power Management

 Charging Circuits

 Power Switches (e.g. Motors, Fans)

Mechanical Data

 Case: U-DFN2020-6

 UL Flammability Rating 94V-0

 Case Material: Molded Plastic. “Green” Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  NiPdAu, Solderable per MIL-STD-202,

Method 208

 Weight: 0.0065 grams (Approximate)

Ordering Information (Note 4)

Product

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

DSS45160FDB-7

2C

7

8

3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

e4

2C = Product type Marking Code

Y = Year: 0~9

W = Week: A~Z : 1~26 week;

a~z; 27~52 week; z represents

52 and 53 week

X = A~Z: Internal code

60V COMPLEMENTARY NPN/PNP LOW VCE(sat) TRANSISTOR

Bottom View

U-DFN2020-6

Device Symbol

Top View

Pin-Out

2C

YWX

C1 B2 E2

E1 B1 C2

1

6

C1 C2

1 2 3

6 5 4

DSS45160FDB

Datasheet Number: DS37802 Rev.1 - 2

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DSS45160FDB

Absolute Maximum Ratings – Q1 and Q2 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

NPN

PNP

Unit

Collector-Base Voltage

VCBO

60

-60

V

Collector-Emitter Voltage

VCEO

60

-60

V

Emitter-Base Voltage

VEBO

7

-7

V

Continuous Collector Current

IC

1

-1

A

Peak Pulse Collector Current

ICM

1.5

-1.5

A

Base Current

IB

300

-300

mA

Peak Base Current

IBM

1

-1

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Notes 5 & 7)

PD

405

mW

(Notes 5 & 8)

510

(Notes 6 & 7)

1650

(Notes 6 & 8)

2470

Thermal Resistance, Junction to Ambient

(Notes 5 & 7)

RJA

308

°C/W

(Notes 5 & 8)

245

(Notes 6 & 7)

76

(Notes 6 & 8)

51

Thermal Resistance, Junction to Lead

(Note 9)

RJL

18

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 10)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge – Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge – Machine Model

ESD MM

400

V

C

Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is

measured under still air conditions whilst operating in a steady-state.

6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm2) 2oz copper.

7. For a dual device with one active die.

8. For dual device with 2 active die running at equal power.

9. Thermal resistance from junction to solder-point (on the exposed collector pads).

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Thermal Characteristics and Derating Information

0.1 1 10

1m

10m

100m

1

100m 110

1m

10m

100m

1

PNP Safe Operating Area

Single Pulse

Tamb=25°C

See note 5 &7

VCE(sat)

Limit

100µs

1ms

10ms

100ms

1s

DC

NPN Safe Operating Area

IC Collector Current (A)

VCE Collector-Emitter Voltage (V)

Single Pulse

Tamb=25°C

See note 5 & 7 100µs

1ms

10ms

100ms

1s

DC

VCE(sat)

Limit

-VCE Collector-Emitter Voltage (V)

-IC Collector Current (A)

DSS45160FDB

Datasheet Number: DS37802 Rev.1 - 2

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DSS45160FDB

Thermal Characteristics and Derating Information

020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

Note 5 & 7

Note 6 & 7

Note 6 & 8

Note 5 & 8

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 110 100 1k

0

30

60

90

120

150

180

210

240

270

300

330

Tamb=25°C

See note 5 & 7

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s) 100µ 1m 10m 100m 110 100 1k

0.1

1

10

100

Single Pulse

Tamb=25°C

See note 5 & 7

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

100µ 1m 10m 100m 110 100 1k

1

10

100

Single Pulse

Tamb=25°C

See note 6 & 7

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

100µ 1m 10m 100m 110 100 1k

0

10

20

30

40

50

60

70

80

Tamb=25°C

See note 6 & 7

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

DSS45160FDB

Datasheet Number: DS37802 Rev.1 - 2

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December 2015

DSS45160FDB

Electrical Characteristics – Q1 NPN (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

BVCBO

60





V

IC = 100µA

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

60



V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

7





V

IE = 100µA

Collector-Base Cutoff Current

ICBO



100

nA

VCB = 48V, IE = 0



50

µA

VCB = 48V, IE = 0, TA = +150°C

Emitter-Base Cutoff Current

IEBO



100

nA

VEB = 5.6V, IC = 0

DC Current Gain (Note 11)

hFE

290

430



VCE = 2V, IC = 100mA

150

220



VCE = 2V, IC = 500mA

70

110



VCE = 2V, IC = 1A

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)



90

120

mV

IC = 500mA, IB = 50mA



170

220

IC = 1A, IB = 100mA



185

240

IC = 1A, IB = 50mA

Equivalent On-Resistance (Note 11)

RCE(sat)



180

240

mΩ

IC = 500mA, IB = 50mA

Base-Emitter Saturation Voltage (Note 11)

VBE(sat)





1

V

IC = 0.5A, IB = 50mA





1.1

IC = 1A, IB = 50mA





1.1

IC = 1A, IB = 100mA

Base-Emitter Turn-on Voltage (Note 11)

VBE(on)





0.9

V

VCE = 2V, IC = 0.5A

Transition Frequency

fT

90

175



MHz

VCE = 10V, IC = 50mA,

f = 100MHz

Output (Collector) Capacitance

Cob (c)



4

6

pF

VCB = -10V, f = 1MHz

Turn-On Time

ton



105



ns

VCC = -10V, IC = -0.5A,

IB1 = -IB2 = 25mA

Delay Time

td



15



ns

Rise Time

tr



90



ns

Turn-Off Time

toff



540



ns

Storage Time

ts



410



ns

Fall Time

tf



130



ns

Note: 11. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.

DSS45160FDB

Datasheet Number: DS37802 Rev.1 - 2

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DSS45160FDB

Electrical Characteristics – Q2 PNP (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

BVCBO

-60





V

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

-60



V

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7





V

IE = -100µA

Collector-Base Cutoff Current

ICBO



-100

nA

VCB = -48V, IE = 0



-50

µA

VCB = -48V, IE = 0, TA = +150°C

Emitter-Base Cutoff Current

IEBO



-100

nA

VEB = -5.6V, IC = 0

DC Current Gain (Note 11)

hFE

170



VCE = -2V, IC = -100mA

120



VCE = -2V, IC = -500mA

70



VCE = -2V, IC = -1A

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)





-180

mV

IC = -500mA, IB = -50mA





-340

IC = -1A, IB = -100mA





-550

IC = -1A, IB = -50mA

Equivalent On-Resistance (Note 11)

RCE(sat)



360

mΩ

IC = -500mA, IB = -50mA

Base-Emitter Saturation Voltage (Note 11)

VBE(sat)





-1

V

IC = -0.5A, IB = -50mA





-1.0

IC = -1A, IB = -50mA





-1.1

IC = -1A, IB = -100mA

Base-Emitter Turn-on Voltage (Note 11)

VBE(on)





-0.9

V

VCE = -2V, IC = -0.5A

Transition Frequency

fT

65



MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Output Capacitance

Cob



15

pF

VCB = -10V, f = 1MHz

Turn-On Time

ton



75



ns

VCC = -10V, IC = -0.5A,

IB1 = -IB2 = 25mA

Delay Time

td



35



ns

Rise Time

tr



40



ns

Turn-Off Time

toff



265



ns

Storage Time

ts



230



ns

Fall Time

tf



35



ns

Note: 11. Measured under pulsed conditions. Pulse width  300µs. Duty cycle 2%.

DSS45160FDB

Datasheet Number: DS37802 Rev.1 - 2

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December 2015

DSS45160FDB

Typical Electrical Characteristics - Q1 NPN (@TA = +25°C, unless otherwise specified.)

DSS45160FDB

Datasheet Number: DS37802 Rev.1 - 2

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December 2015

DSS45160FDB

Typical Electrical Characteristics - Q2 PNP (@TA = +25°C, unless otherwise specified.)

DSS45160FDB

Datasheet Number: DS37802 Rev.1 - 2

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DSS45160FDB

Package Outline Dimensions

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.

D2

R0.150

AA1

A3

Seating Plane

E

D2

E2

b

(Pin #1 ID)

e

L

D

k

z1

z

X2

C

Y2 Y1(2x)

G1

X

Y

G

X1(2x)

U-DFN2020-6

Type B

Dim

Min

Max

Typ

A

0.545

0.605

0.575

A1

0.00

0.05

0.02

A3

-

0.13

b

0.20

0.30

0.25

D

1.95

2.075

2.00

D2

0.50

0.70

0.60

e

-

0.65

E

1.95

2.075

2.00

E2

0.90

1.10

1.00

k

-

0.45

L

0.25

0.35

0.30

z

-

0.225

z1

-

0.175

All Dimensions in mm

Dimensions

Value

(in mm)

C

0.650

G

0.150

G1

0.450

X

0.350

X1

0.600

X2

1.650

Y

0.500

Y1

1.000

Y2

2.300

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Datasheet Number: DS37802 Rev.1 - 2

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DSS45160FDB

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR

PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other

changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising

out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under

its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such

applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are

represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales

channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall

indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising

out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and

markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is

the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the

express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in

the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,

and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their

products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-

or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes

Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life

support devices or systems.

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