DATA SH EET
Product specification
File under Discrete Semiconductors, SC07 April 1995
DISCRETE SEMICONDUCTORS
PMBFJ174 to 177
P-channel silicon field-effect
transistors
April 1995 2
Philips Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and
source connections.
PINNING
Note
1. Drain and source are
interchangeable.
Marking codes:
1 = drain
2 = source
3 = gate
174 : p6X
175 : p6W
176 : p6S
177 : p6Y
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
g
d
s
3
Top view
MAM386
QUICK REFERENCE DATA
Drain-source voltage ±VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate current −IGmax. 50 mA
Total power dissipation
up to Tamb =25°CP
tot max. 300 mW
Drain current
−VDS = 15 V; VGS =0
PMBFJ174 175 176 177
−IDSS >
<20
135 7
70 2
35 1,5
20 mA
mA
Drain-source ON-resistance
−VDS = 0,1 V; VGS =0 R
DS on <85 125 250 300 Ω
April 1995 3
Philips Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
Tj=25°C unless otherwise specified
Note
1. Mounted on a ceramic substrate of 8 mm ×10 mm ×0,7 mm.
Drain-source voltage ±VDS max. 30 V
Gate-source voltage VGSO max. 30 V
Gate-drain voltage VGDO max. 30 V
Gate current (d.c.) −IGmax. 50 mA
Total power dissipation
up to Tamb =25°C
(1) Ptot max. 300 mW
Storage temperature range Tstg −65 to +150 °C
Junction temperature Tjmax. 150 °C
From junction to ambient in free air Rth j-a = 430 K/W
PMBFJ174 175 176 177
Gate cut-off current
VGS = 20 V; VDS =0 I
GSS <1111nA
Drain cut-off current
−VDS = 15 V; VGS = 10 V −IDSX <1111nA
Drain current >
<20
135 7
70 2
35 1,5
20 mA
mA
−VDS = 15 V; VGS =0 −I
DSS
Gate-source breakdown voltage
IG=1µA; VDS =0 V
(BR)GSS >30 30 30 30 V
Gate-source cut-off voltage >
<5
10 3
61
40,8
2,25 V
V
−ID= 10 nA; VDS =−15 V VGS off
Drain-source ON-resistance
−VDS = 0,1 V; VGS =0 R
DS on <85 125 250 300 Ω
April 1995 4
Philips Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DYNAMIC CHARACTERISTICS
Tj=25°C unless otherwise specified
Input capacitance, f = 1 MHz
VGS = 10 V; VDS =0 V C
is typ. 8 pF
VGS =V
DS =0 C
is typ. 30 pF
Feedback capacitance, f = 1 MHz
VGS = 10 V; VDS =0 V C
rs typ. 4 pF
Switching times (see Fig.2 +3) PMBFJ174 175 176 177
Delay time tdtyp. 2 5 15 20 ns
Rise time trtyp. 5 10 20 25 ns
Turn-on time ton typ. 7 15 35 45 ns
Storage temperature tstyp. 5 10 15 20 ns
Fall time tftyp. 10 20 20 25 ns
Turn-off time toff typ. 15 30 35 45 ns
Test conditions: −VDD 10 6 6 6 V
VGS off 12 8 6 3 V
RL560 1200 2000 2900 Ω
VGS on 000 0V
Fig.2 Switching times test circuit
handbook, halfpage
MBK292
RL
50 Ω
D.U.T
50 Ω
Vin
Vout
−VDD
Fig.3 Input and output waveforms
td+tr=t
on
ts+tf=t
off
Rise time input voltage <1 ns
MBK293
VGSoff
INPUT
OUTPUT
ts
tf
90%
10%
10%
90%
10%
90%
td
tr
April 1995 5
Philips Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
April 1995 6
Philips Semiconductors Product specification
P-channel silicon field-effect transistors PMBFJ174 to 177
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
