SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
•
V
GS(th) = 0.8 ...2.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type
V
DS
I
D
R
DS(on)
Package
BSP372 100 V 1.7 A 0.31
Ω
PG-SOT223
Type Tape and Reel Information
BSP372 L6327: 1000 pcs/reel
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
A = 28 ˚C
I
D
1.7
A
DC drain current, pulsed
T
A = 25 ˚C
I
Dpuls
6.8
Avalanche energy, single pulse
I
D = 1.7 A,
V
DD = 25 V,
R
GS = 25
Ω
L
= 23.3 mH,
T
j = 25 ˚C
E
AS
45
mJ
Gate source voltage
V
GS
±
14 V
Gate-source peak voltage,aperiodic
V
gs
±
20
Power dissipation
T
A = 25 ˚C
P
tot
1.8
W
Pb-free lead plating; RoHS compliant
•
Marking
BSP372 Packaging
Non dry
• Qualified according to AEC Q101
B
SP372
Rev 2.0
1
2
008-03-31
BSP372
Rev 2.0 2 2008-03-31
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
T
j -55 ... + 150 ˚C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip to ambient air 1)
R
thJA
≤
70 K/W
Thermal resistance, junction-soldering point 1)
R
thJS
≤
10
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
j= 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 0 ˚C
V
(BR)DSS 100 - -
V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th)
0.8 1.4 2
Zero gate voltage drain current
V
DS = 100 V,
V
GS = 0 V,
T
j = 25 ˚C
V
DS = 100 V,
V
GS = 0 V,
T
j = 125 ˚C
I
DSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS
- 10 100
nA
Drain-Source on-state resistance
V
GS = 5 V,
I
D = 1.7 A
R
DS(on)
- 0.24 0.31
Ω
BSP372
Rev 2.0 3 2008-03-31
Electrical Characteristics, at
T
j= 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
≥
2 *
I
D *
R
DS(on)max,
I
D = 1.7 A
g
fs
2 3.7 -
S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss
- 415 520
pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss
- 80 100
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss
- 50 65
Turn-on delay time
V
DD = 30 V,
V
GS = 5 V,
I
D = 0.3 A
R
G = 50
Ω
t
d(on)
- 20 30
ns
Rise time
V
DD = 30 V,
V
GS = 5 V,
I
D = 0.3 A
R
G = 50
Ω
t
r
- 35 55
Turn-off delay time
V
DD = 30 V,
V
GS = 5 V,
I
D = 0.3 A
R
G = 50
Ω
t
d(off)
- 110 165
Fall time
V
DD = 30 V,
V
GS = 5 V,
I
D = 0.3 A
R
G = 50
Ω
t
f
- 50 75
BSP372
Rev 2.0 4 2008-03-31
Electrical Characteristics, at
T
j= 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 ˚C
I
S- - 1.7
A
Inverse diode direct current,pulsed
T
A = 25 ˚C
I
SM
- - 6.8
Inverse diode forward voltage
V
GS = 0 V,
I
F = 1.7 A
V
SD
- 0.85 1.1
V
Reverse recovery time
V
R = 30 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
t
rr - 65 -
ns
Reverse recovery charge
V
R = 30 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
Q
rr
- 0.11 -
µC
BSP372
Rev 2.0 5 2008-03-31
Power dissipation
P
tot =
ƒ
(
T
A)
020 40 60 80 100 120 ˚C 160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
P
tot
Drain current
I
D =
ƒ
(
T
A)
parameter:
V
GS
≥
5 V
020 40 60 80 100 120 ˚C 160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
A
1.8
I
D
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0,
T
C=25˚C Transient thermal impedance
Z
th JA =
ƒ
(
t
p)
parameter:
D = t
p /
T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJA
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
BSP372
Rev 2.0 6 2008-03-31
Typ. output characteristics
I
D =
ƒ(
V
DS)
parameter:
t
p = 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
V
DS
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
A
3.8
I
D
V
GS [V]
a
a 2.0
b
b 2.5
c
c 3.0
d
d 3.5
e
e 4.0
f
f 4.5
g
g 5.0
h
h 6.0
i
i 7.0
j
j 8.0
k
k 9.0
l
P
tot = 2 W
l 10.0
Typ. drain-source on-resistance
R
DS (on) =
ƒ(
I
D)
parameter:
t
p = 80 µs,
T
j = 25 ˚C
0.0 0.2 0.4 0.6 0.8 1.0 A1.4
I
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Ω
1.0
R
DS (on)
V
GS [V] =
a
2.0
V
GS [V] =
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
6.0
h
h
7.0
i
i
8.0
j
j
9.0
k
k
10.0
Typ. transfer characteristics
I
D
= f
(
V
GS)
parameter:
t
p = 80 µs
V
DS
≥
2 x
I
D x
R
DS(on)max
0 1 2 3 4 5 6 7 8 V 10
V
GS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
A
6.5
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
V
DS
≥
2 x
I
D x
R
DS(on)max
0.0 1.0 2.0 3.0 4.0 A6.0
I
D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
S
6.5
g
fs
BSP372
Rev 2.0 7 2008-03-31
Drain-source on-resistance
R
DS (on) =
ƒ
(
T
j)
parameter:
I
D = 1.7 A,
V
GS = 5 V
-60 -20 20 60 100 ˚C 160
T
j
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Ω
1.0
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) =
ƒ
(
T
j)
parameter:
V
GS =
V
DS,
I
D = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60 -20 20 60 100 ˚C 160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
= 1 MHz
0 5 10 15 20 25 30 V40
V
DS
1
10
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F =
ƒ
(
V
SD)
parameter:
T
j
, t
p = 80 µs
-2
10
-1
10
0
10
1
10
A
I
F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 150 ˚C typ
T
j = 150 ˚C (98%)
BSP372
Rev 2.0 8 2008-03-31
Avalanche energy
E
AS =
ƒ
(
T
j)
parameter:
I
D = 1.7 A,
V
DD = 25 V
R
GS = 25
Ω
,
L
= 23.3 mH
20 40 60 80 100 120 ˚C 160
T
j
0
5
10
15
20
25
30
35
40
mJ
50
E
AS
Drain-source breakdown voltage
V
(BR)DSS =
ƒ
(
T
j)
-60 -20 20 60 100 ˚C 160
T
j
90
92
94
96
98
100
102
104
106
108
110
112
114
116
V
120
V
(BR)DSS
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0.01,
T
C=25˚C
BSP372
R
ev 2.0
9
2
008-03-31
