IRLR/U2905
HEXFET® Power MOSFET
S
D
G
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4
RθJA Case-to-Ambient (PCB mount)** ––– 50 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
VDSS = 55V
RDS(on) = 0.027Ω
ID = 42A
Description
12/8/00
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D - Pa k
TO-252AA I- P a k
TO-251AA
lLogic-Level Gate Drive
lUltra Low On-Resistance
lSurface Mount (IRLR2905)
lStraight Lead (IRLU2905)
lAdvanced Process Technology
lFast Switching
lFully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
IDM Pulsed Drain Current 160
PD @TC = 25°C Power Dissipation 11 0 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy210 mJ
IAR Avalanche Current25 A
EAR Repetitive Avalanche Energy11 mJ
dv/d t Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
PD- 91334E
IRLR/U2905
2www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
trr Reverse Recovery Time –– – 80 120 ns TJ = 25°C, IF = 25A
Qrr Reverse RecoveryCharge ––– 210 320 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
42
160 A
VDD = 25V, starting TJ = 25°C, L =470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRLZ44N data and test conditions.
ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.027 VGS = 10V, ID = 25A
––– ––– 0.030 W VGS = 5.0V, ID = 25A
––– ––– 0.040 VGS = 4.0V, ID = 21A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 21 ––– ––– S VDS = 25V, ID = 25A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
QgTotal Gate Charge ––– ––– 48 ID = 25A
Qgs Gate-to-Source Charge ––– ––– 8.6 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 11 ––– VDD = 28V
trRise Time ––– 84 ––– ns ID = 25A
td(off) Turn-Off Delay Time ––– 26 ––– RG = 3.4Ω, VGS = 5.0V
tfFall Time ––– 15 ––– RD = 1.1Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 1700 ––– VGS = 0V
Coss Output Capacitance ––– 400 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 15 0 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
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LSInternal Source Inductance ––– 7.5 –––
RDS(on) Static Drain-to-Source On-Resistance
LDInternal Drain Inductance – –– 4.5 –––
IDSS Drain-to-Source Leakage Current
Caculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
IRLR/U2905
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A )
D
V , Dra in- to -S o u r ce Vo lta
g
e
(
V
)
DS
A
20
µ
s PU LSE WID TH
T = 25°C
J
VGS
TOP 15V
1 2V
1 0V
8 .0V
6 .0V
4 .0V
3 .0V
BOTTOM 2.5V
2.5V
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A )
D
V , Dra in- to -S o u r ce Vo lta
g
e
(
V
)
DS
A
20
µ
s PU LSE WID TH
T = 175°C
VGS
TOP 15V
1 2V
1 0V
8 .0V
6 .0V
4 .0V
3 .0V
BOTTOM 2.5V
2.5V
J
1
10
100
1000
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
T = 25°C
J
GS
V , G ate -to -S ou rce Volta
g
e (V)
D
I , D ra in -to -S ourc e C urre nt ( A)
T = 175°C
J
A
V = 25 V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Tem perature (°C )
R , D ra in-to -S o u rc e O n R e s is ta nc e
DS(on)
(Normalized)
V = 1 0 V
GS
A
I = 4 1A
D
IRLR/U2905
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
400
800
1200
1600
2000
2400
2800
1 10 100
C , Capacitance (pF)
DS
V , Dra in- to -S o u rc e Volt a
g
e
(
V
)
A
V = 0 V , f = 1 M Hz
C = C + C , C S H O RTED
C = C
C = C + C
GS
iss
g
s
g
d ds
rss
g
d
oss ds
g
d
C
iss
C
oss
C
rss
0
3
6
9
12
15
0 10203040506070
Q , T o ta l Ga te Ch a r
g
e
(
nC
)
G
V , G a te-to -S o u rc e V o ltag e (V )
GS
A
FO R TEST CIR CU IT
S E E FIGU R E 1 3
V = 4 4 V
V = 2 8 V
I = 2 5A
DS
DS
D
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4
T = 25 °C
J
V = 0V
GS
V , Source-to-Drain Volta
g
e
(
V
)
I , Rev e rs e D ra in Cur re nt (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Dra in- to -S o u r ce Vo lta
g
e
(
V
)
DS
I , Drain Current (A)
O P ER A T IO N IN T HIS AR E A L IM IT E D
B Y R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25 °C
T = 17 5 °C
Sin
g
le Pul se
C
J
IRLR/U2905
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
5V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Dut
y
factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(
THERMAL RESPONSE
)
IRLR/U2905
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
0
100
200
300
400
500
25 50 75 100 125 150 175
J
E , S in gle Pu ls e A valanc he E n ergy (m J)
AS
A
Startin
g
T , J unc tion Tem perature
(
°C
)
I
T O P 1 0A
1 7 A
B OTTO M 25A
V = 25 V
D
DD
IRLR/U2905
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRLR/U2905
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P ac kage Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
TO-252AA (D-PARK)
P art Marking Inf ormation
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
6.2 2 (.2 45)
5.9 7 (.2 35)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.01 0) M A M B
4 .57 (.18 0)
2.28 (.09 0)
2X 1.1 4 (.0 45)
0.7 6 (.0 30)
1.52 (.060)
1.15 (.045)
1.02 (.040)
1.64 (.025)
5 .46 (.215 )
5 .21 (.205 ) 1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086) 1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.4 5 (.2 45)
5.6 8 (.2 24)
0 .51 (.02 0)
MIN.
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
10.42 (.4 10)
9.40 (.37 0)
NOTES:
1 DIM E NSIO NING & T O LERAN CING PER ANSI Y14.5 M , 1982 .
2 C ONTROLLING DIMENSION : INCH.
3 C ONFO RMS TO JEDEC OUTLINE TO-252AA.
4 D IMENSIONS SHOWN ARE BEFORE SOLD ER DIP,
SO LDE R DIP MAX. +0.16 (.0 06).
INTERNATIONAL
REC TIF IER
LO G O
ASSEMBLY
L O T COD E
EXAMPLE : THIS IS AN IRFR120
WITH ASSEMBLY
L O T C OD E 9U 1P FIR ST PO RTION
OF PART NUMBER
SECOND PORTION
OF PART NUMBER
120
IRFR
9U 1P
A
IRLR/U2905
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P ackage Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
TO-251AA (I-PARK)
P art Marking Inf ormation
6 .73 (.26 5)
6 .35 (.25 0)
- A -
6 .22 (.2 45)
5 .97 (.2 35)
- B -
3X 0.89 (.0 35)
0.64 (.0 25)
0.25 ( .010) M A M B
2.28 (.09 0)
1.14 (.045 )
0.76 (.030 )
5.46 (.215)
5.21 (.205) 1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
1 .14 (.04 5)
0 .89 (.03 5)
0.58 (.023)
0.46 (.018) LEAD A SSIGN M ENT S
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
S O LDER DIP M A X. +0.16 (.006).
9.65 (.380)
8.89 (.350)
2X
3X
2.2 8 (.0 90)
1.9 1 (.0 75)
1.52 (.060)
1.15 (.045)
4
1 2 3
6.4 5 (.245)
5.6 8 (.224)
0.58 (.023)
0.46 (.018)
INTERNATIONAL
R E CTIFIER
LO GO
ASSEMBLY
LO T C O D E
F IRST PO RT ION
OF PART NUM BE
R
SECON D PORTION
OF PART NUMBER
120
9 U 1P
E XA M PLE : TH IS IS AN IRFU 1 2 0
WITH ASSEMBLY
L O T C ODE 9 U1 P
IRFU
IRLR/U2905
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Tape & Reel Information
TO-252AA
Dimensions are shown in millimeters (inches)
TR
16 .3 ( .6 4 1 )
15 .7 ( .6 1 9 )
8.1 ( .318 )
7.9 ( .312 )
1 2.1 ( .47 6 )
1 1.9 ( .46 9 ) FEED DIRECTIO N FEED DIRECTION
16 .3 ( .641 )
15 .7 ( .619 )
TRR TRL
NO TES :
1. CO NTRO LLING DIMENSION : MILLIM ETER.
2. ALL DIMEN SIONS ARE SHO WN IN M ILLIM ETERS ( INCHES ).
3. O U T LIN E C O N F O R MS T O E IA-4 81 & EIA-541.
NOTES :
1 . OUT L INE CONFORMS TO EIA- 4 8 1.
16 mm
1 3 IN CH
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
