3
1.013x10 ±0.61x10
9,810
4,900
Structure
Appearance
Application
Function
Absolute Maximum Ratings
A
No. Item Symbol Ratings Unit Note
1
2
3
4
5
Operating Ambient Temperature
Storage Temperature
Power Supply Voltage
Power Supply Current
Power Dissipation
Topr
Tstg
Vcc
Icc
PD
° C
° C
V
mA
mW
Operating Supply Voltage Range Vcc
Operating Ambient Pressure Popr (atm)
Operating Constant Gravity Gopr (G)
m / s 2
Operating Shock Sopr
6
7
8
Pa
(G)
m / s 2
Silicon Monolithic Bipolar IC
SSONF-16D
DIL-16Pin Plastic Package (SO type)
-25 ~ +75
-55 ~ +150
5
Note : 1) Ta = 25°C except storage temperature and operating ambient temperature.
200
437
Low Frequency Amplifier
Headphone amplifier IC with Center Amplifier
1
1
Note : 2) At no - signal
1.8 V ~ 4.5 V
4.6
5
2
Note : 3) At Ta = 70°C on PCB of the standard, 50mmX 50mmX 0.8tmm glass - epoxy.
9 Nov 2000
(1.0 ± 0.6)
(1,000)
(500)
Product Specifications
Matsushita Electronics CorporationFMSC-PSDA-002-01
Prepared
Checked
Approved
Eff. Date Eff. Date Eff. Date Eff. Date
AN17880A
Ref No.
Total Page
Page No.
A-1
7
1
%
B
No. Item Symbol Test
Cct. Condition Limit
Min Typ Max Unit Note
Quiescent Current 1
Total Harmonic Distortion
dBv
Icq 1
Vno
THD
Vin = 0mV
STB: ON
Gv 1 dB
Voltage Gain 1 8.3
-94.5
2
Po
Rg = 600
10.55.5
-88
-
30
Electrical Characteristics
(Ambient temperature is 25°C±2°C unless otherwise specified)
Maximum Power Output
Output Noise Voltage
0.5
0.1-
dB-50
Note : 1) For this measurement, use the filter [ A-Curve ].
2) For this measurement, use the filter [ 30KHz LPF ].
8
1
2
3
4
5
72 dB64 -1Ripple Rejection Ratio RR
6
7
9
10
11
12
Quiescent Current 2 Icq 2
Stand-by current Istb uA0.1 5.0
-
mA1.3 2.6
-
Vin = 0mV
C-Amp: OFF
Vin = 0mV
C-Amp: ON mA1.6 3.2
-
Vout = -22dBv
Channel Balance CB Vout = -22dBv dB0 1.0
-1.0
THD = 10%
Vcc = 2V mW9.0 -
5.0
Vout = -12.2dBv
1
Channel Crosstalk CT Vout = -12.2dBv
Vcc = 1.8V,
fr = 100Hz
Vr = -20dBv
2
68 dB-78
Muting Effect MT Vout = -12.2dBv
-56 dBv-46-51
Beep Output Voltage Vbeep Vbeep - in = 0dBv
Vcc = 2.4V, RL = 16, Frequency = 1KHz, Rg = 10K, Vbeep = 0V (GND), STB: OFF, MUTE: OFF,
unless otherwise specified.
1
1
1
1
1
1
1
1
1
1
1
1
Product Specifications
Matsushita Electronics CorporationFMSC-PSDA-002-01
Prepared
Checked
Approved
Eff. Date Eff. Date Eff. Date Eff. Date
AN17880A
Ref No.
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Page No.
B-1
7
2
9 Nov 2000
Description of Test Circuits 1
Test Circuit :
OUT1
16
VCC IN1
Standby
SW Mute
SW BEEP
15 14 13 12 11 10 9
16
+
-
+
-
+
-
2345678
1
C - Amp
SW
10k
+
10µF 22µF
+
OFF
ON
OFF
ON 0.22µF
+
1µF
+
C-Amp
+
OFF
ON
+
1µF
OUT2
16
10k
BEEP IN2
BIAS
+
10µF
Standby Mute
Product Specifications
Matsushita Electronics CorporationFMSC-PSDA-002-01
Prepared
Checked
Approved
Eff. Date Eff. Date Eff. Date Eff. Date
AN17880A
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Page No.
C-1
7
3
Note: The above circuit is used for Latchup testing.
9 Nov 2000
Circuit Function Block Diagram
OUT1
16
VCC IN1
Standby
SW Mute
SW BEEP
15 14 13 12 11 10 9
16
+
-
+
-
+
-
2345678
1
C - Amp
SW
10k
+
10µF 22µF
+
OFF
ON
OFF
ON 0.22µF
+
1µF
+
C-Amp
+
OFF
ON
+
1µF
OUT2
16
10k
BEEP IN2
BIAS
+
10µF
Pin Descriptions
Pin No. Pin Descriptions Pin No. Pin Descriptions
Ripple Filter Input Gnd
Output Gnd
Standby Control
Supply Voltage
Bias Output
Beep Input
Standby Mute
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16 Bias input
Centre Amplifier Control
Ch.2 Output
Ch.1 Output
Centre Amplifier Output
Ch.1 Input
Ch.2 Input
Mute time Control
Mute Control
Product Specifications
Matsushita Electronics CorporationFMSC-PSDA-002-01
Prepared
Checked
Approved
Eff. Date Eff. Date Eff. Date Eff. Date
AN17880A
Ref No.
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Page No.
D-1
7
4
9 Nov 2000
Date
Code
Name
of item
Unit : mm
Package Name SSONF-16D
Product Specifications
Matsushita Electronics CorporationFMSC-PSDA-002-01
Prepared
Checked
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Page No.
E
7
5
SEATING PLANE
18
16 9
5.00 ±0.20
4.40±0.20
6.40±0.30
0.15
+0.10
-0.05
0~10
0.50±0.20
(1.0)
(0.225)
1.20±0.200.10±0.10
0.65
0.22
+0.10
-0.05
SEATING PLANE
( ) : Reference Value
9 Nov 2000
Chip surface passivation
Lead frame material
Inner lead surface process
Outer lead surface process
Chip mounting method
Wire bonding method
Wire material
Mold material
Molding method
SiN,
Fe group,
Ag plating,
Solder plating,
Ag paste,
Thermalsonic bonding,
Au,
Epoxy
Transfer mold,
Others ( )
Others ( )
Others ( )
Others ( )
Others ( )
Others ( )
Others ( )
Others ( )
Others ( )
1
2 , 6
PSG,
Cu group,
Au plating,
Solder dip,
Au-Si alloy, Solder,
Diameter : 24 µm
Multiplunger mold,
2
6
3
4
4
5
5
Product Specifications
Matsushita Electronics CorporationFMSC-PSDA-002-01
Prepared
Checked
Approved
Eff. Date Eff. Date Eff. Date Eff. Date
Ref No.
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Page No.
F-1
7
6
(Structure Description)
Package SSONF-16D
AN17880A
1
4
2
3 6
5
9 Nov 2000
Product Specifications
Matsushita Electronics CorporationFMSC-PSDA-002-01
Prepared
Checked
Approved
Eff. Date Eff. Date Eff. Date Eff. Date
AN17880A
Ref No.
Total Page
Page No.
G-1
7
7
SSONF-16D Package Power Dissipation
(Technical Data)
Ambient Temperature, Ta (°C)
Power Dissipation, PD (W)
PD - Ta
025 50 75 100 125 150
0.000
0.100
0.200
0.300
Single unit package
Rth(j-a)=295.6°C/W
0.400
0.500
0.600
0.700
0.800
0.727
0.422
With a glass-epoxy PCB
Mounted on standard board
(Glass epoxy : 50mm x 50mm x 0.8tmm3)
Rth(j-a)=171.8°C/W
9 Nov 2000