© 2011 IXYS CORPORATION, All Rights Reserved DS100338(05/11)
IXFT30N50Q3
IXFH30N50Q3
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 30 A
IDM TC= 25°C, Pulse Width Limited by TJM 90 A
IATC= 25°C30 A
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns
PDTC= 25°C 690 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-268 4.0 g
TO-247 6.0 g
VDSS = 500V
ID25 = 30A
RDS(on) ≤≤
≤≤
≤ 200mΩΩ
ΩΩ
Ω
Advance Technical Information
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 4mA 3.5 6.5 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS= 0V 10 μA
TJ = 125°C 500 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 200 mΩ
HiperFETTM
Power MOSFETs
Q3-Class
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
SD (Tab)
D
TO-268 (IXFT)
S
G
D (Tab)
Features
zLow Intrinsic Gate Resistance
zInternational Standard Packages
zLow Package Inductance
zFast Intrinsic Rectifier
zLow RDS(on) and QG
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zTemperature and Lighting Controls
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT30N50Q3
IXFH30N50Q3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 12 20 S
Ciss 3200 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 435 pF
Crss 43 pF
RGi Gate Input Resistance 0.17 Ω
td(on) 14 ns
tr 14 ns
td(off) 26 ns
tf 9 ns
Qg(on) 62 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 21 nC
Qgd 26 nC
RthJC 0.18 °C/W
RthCS TO-247 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 30 A
ISM Repetitive, Pulse Width Limited by TJM 120 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 250 ns
IRM 10.4 A
QRM 1.05 μC
IF = 15A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
TO-247 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2011 IXYS CORPORATION, All Rights Reserved
IXFT30N50Q3
IXFH30N50Q3
Fi g. 1. Ou tpu t Ch ar acter i s ti cs @ T
J
= 25ºC
0
5
10
15
20
25
30
0123456
V
DS
- Volts
I
D
- A mperes
V
GS
= 10V
9V
7
V
6
V
8
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- V o lts
I
D
- Amper es
V
GS
= 10V
8
V
9
V
7
V
6
V
Fi g . 3. Ou tpu t C har acter i st i cs @ T
J
= 125º C
0
5
10
15
20
25
30
02468101214
V
DS
- Volts
I
D
- Amper es
5
V
7V
6V
V
GS
= 10V
8V
Fig. 4. R
DS(on)
No r mal i z ed to I
D
= 15A Valu e vs.
Junction T emp erature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Deg re es Centigrad e
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 30A
I
D
= 15A
Fig. 5. R
DS(on)
Normalized to I
D
= 15A Valu e vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 102030405060
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. Maximum Dr ai n C u rr en t vs.
Case Temperatur e
0
5
10
15
20
25
30
35
-50 -25 0 25 50 75 100 125 150
T
C
- Deg re es Centigrad e
I
D
- Ampere s
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT30N50Q3
IXFH30N50Q3
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
40
45
3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
V
GS
- Volt s
I
D
- Amper es
T
J
= 125ºC
- 40ºC
25ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30 35 40 45 50
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volt s
I
S
- Amper es
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 15A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volt s
Capacitance - PicoF ara ds
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o r ward -B i as Safe Op er ati ng Area
0.1
1
10
100
10 100 1,000
V
DS
- Volt s
I
D
- Ampe res
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit 25µs
© 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_30N50Q3(Q6)05-17-11
IXFT30N50Q3
IXFH30N50Q3
Fi g . 13. Maximu m Tr an si en t Thermal Imped an ce
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Second s
Z(th)JC - ºC / W
