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ZXMN6A25K
60V DPAK N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Low on-resistance
Fast switching speed
Low gate drive
DPAK package
Applications
DC-DC converters
Power management functions
Disconnect switches
Motor control
Ordering information
Device marking
ZXMN
6A25
V(BR)DSS RDS(on) ()ID (A)
60
0.050 @ VGS= 10V 10.7
0.070 @ VGS= 4.5V 9
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN6A25KTC 13 16 2,500
D
S
G
GS
D
D
Pinout - top view
ZXMN6A25K
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Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz. copper, in
still air conditions.
Parameter Symbol Limit Unit
Drain-source voltage VDSS 60 V
Gate-source voltage VGS ±20 V
Continuous drain current @ VGS= 10V; Tamb=25°C(b) ID10.7 A
@ VGS= 10V; Tamb=70°C(b) 8.6 A
@ VGS= 10V; Tamb=25°C(a) 7A
Pulsed drain current(c) IDM 36 A
Continuous source current (body diode)(b) IS11.8 A
Pulsed source current (body diode)(c) ISM 36 A
Power dissipation at Tamb =25°C(a) PD4.25 W
Linear derating factor 34 mW/°C
Power dissipation at Tamb =25°C(b) PD9.85 W
Linear derating factor 78.7 mW/°C
Power dissipation at Tamb =25°C(d) PD2.11 W
Linear derating factor 16.8 mW/°C
Operating and storage temperature range Tj, Tstg -55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient(a) RJA 29.4 °C/W
Junction to ambient(b) RJA 12.7 °C/W
Junction to ambient(d) RJA 59.1 °C/W
ZXMN6A25K
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Thermal characteristics
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Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage
V(BR)DSS 60 V ID= 250A, VGS=0V
Zero gate voltage drain current IDSS 1.0 AV
DS= 60V, VGS=0V
Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-source threshold voltage VGS(th) 13VI
D= 250A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
RDS(on) 0.050 VGS= 10V, ID= 3.6A
0.070 VGS= 4.5V, ID = 3.0A
Forward transconductance (*)(‡) gfs 10.2 S VDS= 15V, ID= 4.5A
Dynamic(‡)
Input capacitance Ciss 1063 pF VDS= 30V, VGS=0V
f=1MHz
Output capacitance Coss 104 pF
Reverse transfer capacitance Crss 64 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature
(‡) For design aid only, not subject to production testing.
Turn-on-delay time td(on) 3.8 ns VDD= 30V, ID= 1A
RG6.0, VGS= 10V
Rise time tr 4.0 ns
Turn-off delay time td(off) 26.2 ns
Fall time tf10.6 ns
Gate charge Qg11.0 nC VDS= 30V, VGS= 5V
ID= 1.4A
Total gate charge Qg20.4 nC VDS= 30V, VGS= 10V
ID= 1.4A
Gate-source charge Qgs 4.1 nC
Gate drain charge Qgd 5.1 nC
Source-drain diode
Diode forward voltage(*) VSD 0.85 0.95 V Tj=25°C, IS= 5.5A,
VGS=0V
Reverse recovery time(‡) trr 22.0 ns Tj=25°C, IS= 2.2A,
di/dt=100A/s
Reverse recovery charge(‡) Qrr 21.4 nC
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Typical characteristics
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Typical characteristics
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k
12V Same as
D.U.T
VGS
VGS
VDS
VGQGS QGD
QG
VGS
90%
10%
t(on)
t(on)
td(on) trtr
td(off)
VDS
VCC
RD
RG
VDS
ID
IG
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Package outline - DPAK
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
DIM Inches Millimeters DIM Inches Millimeters
Min Max Min Max Min Max Min Max
A 0.086 0.094 2.18 2.39 e 0.090 BSC 2.29 BSC
A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41
b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78
b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF
b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC
c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65
c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016
D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52
D1 0.205 - 5.21 - θ1°0°10°0°10°
E 0.250 0.265 6.35 6.73 θ°0°15°0°15°
E10.170-4.32------
ZXMN6A25K
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Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview” Future device intended for production at some point. Samples may be available
“Active” Product status recommended for new designs
“Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs”
Device is still in production to support existing designs and production
“Obsolete” Production has been discontinued
Datasheet status key:
“Draft version” This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
Zetex sales offices
Europe
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Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
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USA
Telephone: (1) 631 360 2222
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usa.sales@zetex.com
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Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
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Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
© 2006 Published by Zetex Semiconductors plc