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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
1
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Functional Diagram
Features
P1dB Output Power: +31 dBm
Psat Output Power: +33 dBm
High Gain: 11 dB
Output IP3: +41 dBm
Supply Voltage: Vdd = +15V @ 500 mA
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25 mm
Typical Applications
The HMC998LP5E is ideal for:
• Test Instumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
General Description
The HMC998LP5E is a GaAs pHEMT MMIC
Distributed Power Amplier which operates between
0.1 and 20 GHz. The amplier provides 11 dB of gain,
+41 dBm output IP3, and +31 dBm of output power at
1 dB gain compression while requiring only 500 mA
from a +15V supply. The HMC998LP5E exihibits a
slightly positive gain from 3 to 17 GHz making it ideal
for EW, ECM, Radar and test equipment applications.
The HMC998LP5E amplier I/Os are internally
matched to 50 Ohms and is supplied in a leadless
QFN 5x5 mm surface mount package.
Electrical Specications, TA = +25° C, Vdd =+15V, Vgg2 = +9.5V, Idd = 500 mA [1]
Parameter Min. Typ. Max. Min. Ty p. Max. Min. Typ. max Units
Frequency Range 0.1 - 4 4 - 16 16 - 20 GHz
Gain 811 811 912 dB
Gain Flatness ±0.3 ±0.5 ±0.5 dB
Gain Variation Over Temperature 0.006 0.012 0.017 dB/ °C
Input Return Loss 17 15 25 dB
Output Return Loss 10 15 20 dB
Output Power for 1 dB Compression (P1dB) 28 31 28 31 26 29 dBm
Saturated Output Power (Psat) 33 33 31 dBm
Output Third Order Intercept (IP3) [2] 41 41 40 dBm
Noise Figure 84.5 5dB
Total Supply Current 500 500 500 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 500 mA typical.
[2] Measurement taken at Pout / tone = +14 dBm.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
2
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. TemperatureLow Frequency Gain & Return Loss
-30
-20
-10
0
10
20
0 4 8 12 16 20 24
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
4
6
8
10
12
14
16
0 4 8 12 16 20
+25 C +85 C -40 C
GAIN (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 4 8 12 16 20
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 4 8 12 16 20
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
10
20
0.0001 0.001 0.01 0.1 1 10
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0 4 8 12 16 20
+25 C +85 C -40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
3
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Psat vs. Temperature
Psat vs. Supply Voltage
Output IP3 vs. Temperature,
Pout/tone = +18 dBm Output IP3 vs. Supply Voltage,
Pout/tone = +18 dBm
P1dB vs. Temperature
P1dB vs Supply Voltage
24
26
28
30
32
34
36
0 4 8 12 16 20
+25 C +85 C -40 C
P1dB (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 4 8 12 16 20
+25 C +85 C -40 C
Psat (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 4 8 12 16 20
15V 14V 12V
P1dB (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 4 8 12 16 20
15V 14V 12V
Psat (dBm)
FREQUENCY (GHz)
25
30
35
40
45
50
0 4 8 12 16 20
+25 C +85 C -40 C
IP3 (dBm)
FREQUENCY (GHz)
25
30
35
40
45
50
0 4 8 12 16 20
15V 14V 12V
IP3 (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
4
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Power Compression @ 18 GHz
Power Dissipation
Power Compression @ 4 GHz
Power Compression @ 10 GHz
Output IP3 vs. Idd @ 10 GHz
Second Harmonics vs. Temperature
@ Pout = 18 dBm
25
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18 20 22
450 mA 500 mA
IP3 (dBm)
OUTPUT POWER (dBm)
0
5
10
15
20
25
30
35
0 4 8 12 16 20 24
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
1 5 9 13 17 21 25
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
0 4 8 12 16 20 24
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
4
5
6
7
8
9
10
11
0 4 8 12 16 20 24
3 GHz
6 GHz
9 GHz
12 GHz
15 GHz
18 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+25 C +85 C -40 C
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
5
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +17 Vdc
Gate Bias Voltage (Vgg1) -3 to 0 Vdc
Gate Bias Voltage (Vgg2) Vgg2 = (Vdd-6.5V) to (Vdd-4.5V)
RF Input Power (RFIN) +27 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 127 mW/°C above 85 °C) 8.26 W
Thermal Resistance
(channel to gnd paddle) 7.8 7 °C/ W
Output Power into VSWR > 7:1 +32 dBm
Storage Temperature -65 to 150°C
Operating Temperature -40 to 85 °C
ESD Sensitivity (HBM) Class 1A
Vdd (V) Idd (mA)
+15 500
+14 500
+13 500
+12 500
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Adjust Vgg1 to achieve Idd = 500 mA
Reverse Isolation vs. Temperature
Second Harmonics vs. Vdd
@ Pout = 18 dBm Second Harmonics vs Pout
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+12V +14V +15V
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+12 dBm
+14 dBm
+16 dBm
+18 dBm
+20 dBm
+22 dBm
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
-80
-70
-60
-50
-40
-30
-20
-10
0
0 4 8 12 16 20 24
+25 C +85 C -40 C
ISOLATION (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
6
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Outline Drawing
Package Information
Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1]
HMC998LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL3 H998
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
7
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Pin Number Function Description Interface Schematic
1, 4, 6, 14, 20,
22, GND These pins and package bottom must be connected to
RF/DC ground.
2Vgg2
Gate control for amplier. Attach bypass capacitor per
application circuit herein. For nominal opperation +9.5V
should be applied to Vgg2.
3, 7, 8, 9, 10,
11, 12, 17, 18,
19, 23, 24, 25,
26, 27, 28, 31,
32
N/C
These pins are not connected internally, however all data
shown herein was measured with these pins connected
to RF/DC ground externally.
5RFIN This pad is DC coupled and matched to 50 Ohms. Block-
ing capacitor is required.
13 Vgg1
Gate control 1 for amplier. Attach bypass capacitor per
application circuit herein. Please follow “MMIC Biasing
Procedure” application note.
15, 29 ACG4, ACG2 Low frequency termination. Attach bypass capacitor per
application circuit.
21 RFOUT & VDD
RF output for amplier. Connect DC bias (Vdd) network
to provide drain current (Idd). See application circuit
herein.
30 ACG1 Low frequency termination. Attach bypass capacitor per
application circuit herein.
Pin Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
8
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Evaluation PCB
Evaluation Order Information
Item Contents Part Number
Evaluation PCB Only HMC998LP5E Evaluation PCB Eval01-HMC998LP5E [1]
[1] Reference this number when ordering Evaluation PCB Only
List of Materials for Evaluation PCB EVAL01-HMC998LP5E
Item Description
J1, J2, J5, J6 PCB Mount SMA RF Connector
J3, J4 DC Pins.
C1 - C4 1000 pF Capacitor, 0402 Pkg.
C5 - C8 10 kpF Capacitor, 0402 Pkg.
C9 - C11 4.7 uF Capacitor, Tantalum.
R1, R2 0 Ohm Resistor, 0402 Pkg.
U1 HMC998LP5E
PCB [1] 127135 Evaluation PCB.
[1] Circuit Board Material: Rogers 4350 or Arlon 25FR
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from Hit-
tite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
10
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Notes: