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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. J109 / MMBFJ108 N-Channel Switch Features * This device is designed for digital switching applications where very low on resistance is mandatory. * Sourced from process 58 3 2 1 TO-92 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Figure 1. J109 Device Package Figure 2. MMBFJ108 Device Package Ordering Information Part Number Top Mark Package Packing Method J109 J109 TO-92 3L Bulk J109_D26Z J109 TO-92 3L Tape and Reel MMBFJ108 I8 SSOT 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA -55 to 150 C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 www.fairchildsemi.com J109 / MMBFJ108 -- N-Channel Switch January 2015 Values are at TA = 25C unless otherwise noted. Symbol PD Max. Parameter J109 (3) MMBFJ108(4) Unit Total Device Dissipation 625 350 mW Derate Above 25C 5.0 2.8 mW/C RJC Thermal Resistance, Junction-to-Case 125 RJA Thermal Resistance, Junction-to-Ambient 200 C/W C/W 357 Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead minimum 6cm2. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cut-Off Voltage IG = -10 A, VDS = 0 -25 V VGS = -15 V, VDS = 0 -3.0 VGS = -15 V, VDS = 0, TA = 100C -200 VDS = 15 V, ID = 10 nA MMBFJ108 -3.0 -10.0 J109 -2.0 -6.0 nA V On Characteristics IDSS rDS(on) Zero-Gate Voltage Drain Current(5) VDS = 15 V, VGS = 0 Drain-Source On Resistance VDS 0.1 V, VGS = 0 MMBFJ108 80 J109 40 mA MMBFJ108 8.0 J109 12 Small Signal Characteristics Cdg(on) Csg(off) Drain-Gate &Source-Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz 85 pF Cdg(off) Drain-Gate Off Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz 15 pF Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz 15 pF Note: 5. Pulse test: pulse width 300 s, duty cycle 2%. (c) 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 www.fairchildsemi.com 2 J109 / MMBFJ108 -- N-Channel Switch Thermal Characteristics Parameter Interactions - DRAIN CURRENT (mA) - 3.0 V 60 40 - 4.0 V T A = 25 C 20 TYP V GS(off) = - 5.0 V I D - 1.0 V - 5.0 V 0 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) r DS @ V DS = 100mV, VGS = 0 50 V GS(off) @ V DS = 5.0V, I r DS 100 50 5 I DSS _ 2 0.1 10 _ _ _ _ 0.5 1 5 10 VGS (OFF) - GATE CUTOFF VOLTAGE (V) Figure 4. Parameter Interactions 50 100 - DRAIN CURRENT (mA) f = 0.1 - 1.0 MHz C iss (V DS = 5.0V) 10 D C rss (VDS = 0 ) T A = 25 C TYP V GS(off) = - 0.7 V 40 30 V GS = 0 V 20 - 0.1 V - 0.2 V - 0.3 V - 0.4 V - 0.5 V 10 I C ts (C rs ) - CAPACITANCE (pF) 500 = 3.0 nA 10 Figure 3. Common Drain-Source 0 -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) 0 -20 0 20 10 e n - NOISE VOLTAGE (nV / Hz) 100 50 V GS(off) @ 5.0V, 10 A r DS r DS = V GS 1 -________ V GS(off) 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V) 100 50 5 V DG = 10V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f 1.0 kHz 10 5 I D = 1.0 mA I D = 10 mA 1 0.01 0.03 Figure 7. Normalized Drain Resistance vs. Bias Voltage (c) 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE (V) Figure 6. Common Drain-Source Figure 5. Common Drain-Source r DS - NORMALIZED RESISTANCE D DRAIN CURRENT (mA) 80 1,000 I DSS @ V DS = 5.0V, V GS = 0 PULSED DSS - - 2.0 V V GS = 0 V 100 I r DS - DRAIN "ON" RESISTANCE () Common Drain-Source 100 0.1 0.5 1 2 10 f - FREQUENCY (kHz) 100 Figure 8. Noise Voltage vs. Frequency www.fairchildsemi.com 3 J109 / MMBFJ108 -- N-Channel Switch Typical Performance Characteristics Switching Turn-On Time vs Drain Current Switching Turn-On Time vs Gate-Source Cutoff Voltage 50 TA = 25C t OFF - TURN-OFF TIME (ns) t ON ON - TURN-ON TIME (ns) 10 VDD = 1.5V 8 V GS(off) = - 12V 6 I D = 30 mA 4 I D = 10 mA 2 0 0 V GS(off) = - 3.0V 125 C C 125 5 C 25 C - 55 V GS(off) = - 5.0V 25 C 1 10 - DRAIN CURRENT (mA) 100 Figure 11. On Resistance vs. Drain Current T A = 25 C T A = - 55 C V DG = 10V C T A = 25 f = 1.0 kHz C T A = 125 5 10 15 20 I D - DRAIN CURRENT (mA) 25 100 V DG = 5.0V 10V V GS(off) 5.0V 15V 20V - 4.0V 10V 10 5.0V 15V 10V 20V 15V - 2.0V 20V 1 0.1 T A = 25 C f = 1.0 kHz - 1.0V 1 I D - DRAIN CURRENT (mA) 10 700 600 V GS(off) = - 1.0V V GS(off) = - 3.0V V GS(off) = - 5.0V 1 I D - DRAIN CURRENT (mA) 10 500 T O -9 2 S u p e rS O T -3 400 300 200 100 0 0 25 50 75 100 125 150 o TEM PERATURE ( C) Figure 13. Transconductance vs. Drain Current (c) 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 0 Figure 12. Output Conductance vs. Drain Current 10 1 0.1 V GS(off) = - 12V PD - POWER DISSIPATION(mW) 100 TA = 25 C VDD = 1.5V 10 g os - OUTPUT CONDUCTANCE ( mhos) ) r DS - DRAIN "ON" RESISTANCE ( V GS = 0 ID g fs - TRANSCONDUCTANCE (mmhos) V GS(off) = - 3.5V Figure 10. Switching Turn-On Time vs. Drain Current 100 10 V GS(off) = - 5.5V 20 -2 -4 -6 -8 -10 VGS(off) GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V) 50 V GS(off) = - 8.5V 30 0 Figure 9. Switching Turn-On Time vs. Gate-Source Cut-Off Voltage 1 40 Figure 14. Power Dissipation vs. Ambient Temperature www.fairchildsemi.com 4 J109 / MMBFJ108 -- N-Channel Switch Typical Performance Characteristics (Continued) J109 / MMBFJ108 -- N-Channel Switch Physical Dimensions D Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type (c) 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 www.fairchildsemi.com 5 J109 / MMBFJ108 -- N-Channel Switch Physical Dimensions (Continued) Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type (c) 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 www.fairchildsemi.com 6 J109 / MMBFJ108 -- N-Channel Switch Physical Dimensions (Continued) Figure 17. MOLDED PACKAGE, SUPERSOT, 3-LEAD (c) 2002 Fairchild Semiconductor Corporation J109 / MMBFJ108 Rev. 2.2 www.fairchildsemi.com 7 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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