AP9565GEH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance G Fast Switching Characteristic BVDSS -40V RDS(ON) 38m ID -24A S Description G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D S The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9565GEJ) is available for low-profile applications. G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage +16 V ID@TC=25 Continuous Drain Current, VGS @ 10V -24 A ID@TC=100 Continuous Drain Current, VGS @ 10V -15 A 1 IDM Pulsed Drain Current -80 A PD@TC=25 Total Power Dissipation 35.7 W Linear Derating Factor 0.28 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W 3 Data and specifications subject to change without notice 1 200903094 AP9565GEH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units -40 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA - -0.02 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A - - 38 m VGS=-4.5V, ID=-8A - - 58 m -0.8 - -2.5 V VGS=0V, ID=-250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-10V, ID=-16A - 13 - S IDSS Drain-Source Leakage Current VDS=-40V, VGS=0V - - -1 uA Drain-Source Leakage Current (T j=125 C) VDS=-32V, VGS=0V - - -250 uA Gate-Source Leakage VGS=+16V, VDS=0V - - +30 uA ID=-16A - 10 16 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-30V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6 - nC VDS=-20V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 28 - ns tf Fall Time RD=20 - 16 - ns Ciss Input Capacitance VGS=0V - 765 1230 pF Coss Output Capacitance VDS=-25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF Rg Gate Resistance f=1.0MHz - 6 9 Min. Typ. IS=-16A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-16A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 17 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9565GEH/J 80 60 -10V -7.0V -5.0V -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V T C = 150 o C -ID , Drain Current (A) o T C = 25 C 60 -4.5V 40 V G = -3.0 V 40 V G = -3.0 V 20 20 0 0 0 2 4 6 8 0 2 -V DS , Drain-to-Source Voltage (V) 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 120 I D = -16 A V G = -10V ID=-8A T C =25 Normalized RDS(ON) RDS(ON) (m) 100 80 60 1.4 1.0 40 0.6 20 2 4 6 8 25 10 -V GS , Gate-to-Source Voltage (V) 75 100 125 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20.0 60.0 15.0 50.0 T j =25 o C RDS(ON) (m) T j =150 o C -IS(A) 50 10.0 5.0 V GS =-4.5V 40.0 V GS =-10V 30.0 0.0 20.0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 0 10 20 30 40 -I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 3 AP9565GEH/J f=1.0MHz 1000 I D = - 16 A V DS = - 30 V 10 C iss 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 C oss C rss 100 4 2 0 10 0 4 8 12 16 20 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 100us -ID (A) 10 1ms 10ms 100ms DC 1 o T c =25 C Single Pulse DUTY=0. 0.2 0.1 0.1 0.0 PDM t 0.0 T 0.0 Duty factor = t/T Peak Tj = PDM x Rthjc + T C SINGLE PULSE 0.01 0.1 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 -ID , Drain Current (A) V DS = -5V VG 30 T j =25 o C QG T j =150 o C -4.5V QGS 20 QGD 10 Charge Q 0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4