SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.045 ;I
D= -5.5A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•Low profile SOIC package
APPLICATIONS
•Motor Drive
•LCD backlighting
DEVICE MARKING
ZXMP
3A16
ZXMP3A16DN8
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DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
DEVICE REEL TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A16DN8TA 7’‘ 12mm 500 units
ZXMP3A16DN8TC 13’‘ 12mm 2500 units
ORDERING INFORMATION
SO8
Top view
PINOUT
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PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) RθJA 100 °C/W
Junction to Ambient (b)(e) RθJA 70 °C/W
Junction to Ambient (b)(d) RθJA 60 °C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGS ⫾20 V
Continuous Drain Current@VGS=10V; TA=25⬚C(b)(d)
@VGS=10V; TA=70⬚C(b)(d)
@VGS=10V; TA=25⬚C(a)(d)
ID-5.5
-4.4
-4.2
A
A
A
Pulsed Drain Current (c) IDM -20 A
Continuous Source Current (Body Diode)(b) IS-3.2 A
Pulsed Source Current (Body Diode)(c) ISM -20 A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD1.25
10
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD1.8
14
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD2.1
17
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
ZXMP3A16DN8
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100m 1 10
10m
100m
1
10
Single Pulse
Tamb=25°C
One active die
R
DS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IDDrain Current (A)
-VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Two active die
One active die
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
110
Tamb=25°C
Oneactivedie
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Oneactivedie
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250μA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1.0 AV
DS=-30V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250A,
VDS=V
GS
Static Drain-Source On-State Resistance (1) RDS(on) 0.045
0.070
⍀
⍀
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-3.4A
Forward Transconductance (1)(3) gfs 9.2 S VDS=-15V,ID=-4.2A
DYNAMIC (3)
Input Capacitance Ciss 1022 pF
VDS=-15 V, VGS=0V,
f=1MHz
Output Capacitance Coss 267 pF
Reverse Transfer Capacitance Crss 229 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 3.8 ns
VDD =-15V, ID=-1A
RG=6.0Ω,V
GS=-10V
Rise Time tr6.5 ns
Turn-Off Delay Time td(off) 37.1 ns
Fall Time tf21.4 ns
Gate Charge Qg17.2 nC VDS=-15V,VGS=-5V,
ID=-4.2A
Total Gate Charge Qg29.6 nC
VDS=-15V,VGS=-10V,
ID=-4.2A
Gate-Source Charge Qgs 2.8 nC
Gate-Drain Charge Qgd 8.6 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.85 -0.95 V TJ=25°C, IS=-3.6A,
VGS=0V
Reverse Recovery Time (3) trr 21.7 ns TJ=25°C, IF=-2A,
di/dt= 100A/μs
Reverse Recovery Charge (3) Qrr 16.1 nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width ≤300μs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A16DN8
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0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
123
0.1
1
10
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01 0.1 1 10
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
1.5V
10V 4V 3.5V
-VGS
2.5V
2V
3V
Output Characteristics
T=25°C
-VGS
-IDDrain Current (A)
-VDS Drain-Source Voltage (V)
4V 3.5V
3V
2V
1.5V
10V
2.5V
Output Characteristics
T = 150°C
-IDDrain Current (A)
-VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
-VDS =10V
T = 25°C
T = 150°C
-IDDrain Current (A)
-VGS Gate-Source Voltage (V)
Normalised Curves v Temperature
R
DS(on)
V
GS =-10V
ID= -4.2A
V
GS(th)
V
GS =V
DS
ID= -250uA
Normalised RDS(on) and VGS(t h)
Tj Junction Temperature (°C)
1.5V
10V
3V
2V
4V
3.5V
2.5V
On-Resistance v Drain Current
T=25°C
-VGS
R
DS(on) Drain-Source On-Resistance (Ω)
-IDDrain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
-VSD Source-Drain Voltage (V)
-ISD Reverse Drain Current (A)
TYPICAL CHARACTERISTICS
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Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's
application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with
respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),
breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use
of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales
channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and
ELV directives.
Product status key:
"Preview"Future device intended for production at some point. Samples may be available
"Active"Product status recommended for new designs
"Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect
"Not recommended for new designs"Device is still in production to support existing designs and production
"Obsolete"Production has been discontinued
Datasheet status key:
"Draft version"This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
"Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to
the test conditions and specifications may occur, at any time and without notice.
"Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and
without notice.
ZXMP3A16DN8
ISSUE 2 - MAY 2007
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Europe
Zetex GmbH
Kustermann-Park
Balanstraße 59
D-81541 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
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Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
© Zetex Semiconductors plc 2007
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
DIM
Millimeters Inches
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
A 1.35 1.75 0.053 0.069 e 1.27 BSC 0.050 BSC
A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020
D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010
H 5.80 6.20 0.228 0.244 ⍜0° 8° 0° 8°
E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050 - ----
PACKAGE DIMENSIONS
