111
NPN PNP
NPN PNP
NPN PNP
VCE(sat)-IB Characteristics (Typical)
VCE(sat)-IC Temperature Characteristics (Typical)
Safe Operating Area (SOA)
Characteristic curves
SMA6010
(Ta=25°C)
NPN PNP
Symbol Specification Unit Conditions Specification Unit Conditions
min typ max min typ max
ICBO 10
µ
AVCB=60V –10
µ
AVCB=–60V
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCEO 60 V IC=10mA –60 V IC=–20mA
hFE 2000 5000 12000 VCE=4V, IC=3A 2000 5000 12000 VCE=–4V, IC=–3A
VCE(sat) 1.5 V –1.5 V
VBE(sat) 2.0 V –2.0 V
VFEC 1.8 V IFEC=1A –1.8 V IFEC=–1A
ton 1.0
µ
sVCC 30V, 0.4
µ
sVCC –30V,
tstg 4.0
µ
sIC=3A, 0.8
µ
sIC=–3A,
tf1.5
µ
sIB1=–IB2=10mA 0.6
µ
sIB1=–IB2=–10mA
fT75 MHz VCE=12V, IE=–0.1A 200 MHz VCE=–12V, IE=0.2A
Cob 50 pF VCB=10V, f=1MHz 75 pF VCB=–10V, f=1MHz
IC=3A, IB=6mA IC=–3A, IB=–6mA
3
0.2
V
CE
(sat) (V)
I
B
(mA)
2
1
00.5 1 5 10 50 100 200
I
C
=4A
I
C
=1A
I
C
=2A
3
0.5
(I
C
/ I
B
=1000)
V
CE
(sat) (V)
I
C
(A)
2
1
0156
T
a
=125°C
75°C
25°C
–30°C
10
3
I
C
(A)
V
CE
(V)
5
1
0.5
0.1
0.05
0.03 5 10 50 100
Single Pulse
Without Heatsink
T
a
=25°C
1ms
10ms
–3
–0.3
V
CE
(sat) (V)
I
B
(mA)
–2
–1
0–0.5 –1 –5 –10 –50 –100 –200
I
C
=–4A
I
C
=–2A
I
C
=–1A
–3
–0.5
(I
C
/
IB
=1000)
V
CE
(sat) (V)
I
C
(A)
–2
–1
0–1 –5 –6
125°C
25°C
75°C
T
a
=–30°C
–10
–3
I
C
(A)
–5
–1
–0.5
–0.1
–0.05
–0.03 –5 –10 –50 –100
Single Pulse
Without Heatsink
T
a
=25°C
1ms
10ms
V
CE
(V)
20
10
5
1
0.5
15 10 50 100 500 1000
θ
j–a
(°C / W)
PW (mS)
20
15
10
5
0
–40 0 50 100 150
P
T
(W)
T
a
(°C)
With Infinite Heatsink
Without Heatsink
Electrical characteristics
PT-Ta Characteristics
θ
j-a-PW Characteristics