MCR22-8G - ON Semiconductor - Datasheet.Directory

November, 2008 − Rev. 6

1Publication Order Number:

MCR22−6/D

MCR22-6, MCR22-8

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed and tested for repetitive peak operation required for CD

ignition, fuel ignitors, flash circuits, motor controls and low−power

switching applications.

Features

•150 A for 2 ms Safe Area

•High dv/dt

•Very Low Forward “On” Voltage at High Current

•Low−Cost TO−226 (TO−92)

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off−State Voltage (Note 1)

(RGK = IK, TJ = *40 to +110°C, Sine Wave,

50 to 60 Hz, RGK = 1kW) MCR22−6

MCR22−8

VDRM,

VRRM 400

600

On−State Current RMS

(180° Conduction Angles, TC = 80°C)

IT(RMS) 1.5 A

Peak Non−repetitive Surge Current,

@TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)

ITSM 15 A

Circuit Fusing Considerations (t = 8.3 ms) I2t 0.9 A2s

Forward Peak Gate Power

(Pulse Width ≤ 1.0 msec, TA = 25°C)

PGM 0.5 W

Forward Average Gate Power

(t = 8.3 msec, TA = 25°C)

PG(AV) 0.1 W

Forward Peak Gate Current

(Pulse Width ≤1.0 ms, TA = 25°C)

IFGM 0.2 A

Reverse Peak Gate Voltage

(Pulse Width ≤1.0 ms, TA = 25°C)

VRGM 5.0 V

Operating Junction Temperature Range

@ Rated VRRM and VDRM

TJ−40 to +110 °C

Storage Temperature Range Tstg −40 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 50 °C/W

Thermal Resistance, Junction−to−Ambient RqJA 160 °C/W

Lead Solder Temperature

(Lead Length q 1/16″ from case, 10 S Max)

TL+260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SCRs

1.5 AMPERES RMS

400 thru 600 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

TO−92 (TO−226)

CASE 029

STYLE 10

PIN ASSIGNMENT

Gate

Anode

Cathode

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

MCR

22−x

AYWW G

MARKING DIAGRAMS

MCR22−x = Device Code

x = 6 or 8

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

http://onsemi.com

123

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

MCR22−6, MCR22−8

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM; RGK = 1 kW)T

C = 25°C

TC = 110°C

IDRM, IRRM

−

200

ON CHARACTERISTICS

Peak Forward On−State Voltage (Note 2)

(ITM = 1 A Peak)

VTM −1.2 1.7 V

Gate Trigger Current (Continuous dc) (Note 3) TC = 25°C

(VAK = 6 Vdc, RL = 100 W)T

C = −40°C

IGT −

−

200

500

Gate Trigger Voltage (Continuous dc) (Note 3) TC = 25°C

(VAK = 7 Vdc, RL = 100 W)T

C = −40°C

VGT −

−

0.8

1.2

Gate Non−Trigger Voltage

(VAK = 12 Vdc, RL = 100 W)T

C = 110°C

VGD 0.1 − − V

Holding Current

(VAK = 12 Vdc, RGK = 1kW)T

C = 25°C

Initiating Current = 20 mA TC = −40°C

−

2.0

−

5.0

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage (RGK = 1kW)

(TC = 110°C)

dv/dt −25 −V/ms

2. Pulse Width = 1.0 ms, Duty Cycle v1%.

3. RGK Current not included in measurement.

+ Current

+ Voltage

VTM

IDRM at VDRM

Symbol Parameter

VDRM Peak Repetitive Off State Forward Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Off State Reverse Voltage

IRRM Peak Reverse Blocking Current

VTM Peak on State Voltage

IHHolding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

MCR22−6, MCR22−8

http://onsemi.com

T , MAXIMUM ALLOWABLE

AAMBIENT TEMPERATURE ( C)°

T , MAXIMUM ALLOWABLE

CCASE TEMPERATURE ( C)°

IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

1.8 0 0.2 0.4 0.6 0.8

120

1.0

100

140

IT(AV), AVERAGE ON-STATE CURRENT (AMP)

CURRENT DERATING

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.0

100

1.6

140

α = CONDUCTION

ANGLE

α = 180°

α = CONDUCTION ANGLE

α = 180°

Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature

I , INSTANTANEOUS ON‐STATE CURRENT (AMP)

1.5

VT, INSTANTANEOUS ON-STATE VOLTAGE

(VOLTS)

0 0.5 1.0 2.0

0.01

0.05

2.5

0.02

0.1

0.03

3.0

0.07

0.2

0.3

0.5

0.7

1.0

2.0

5.0

25°C

TJ = 110°C

Figure 3. Typical Forward Voltage

MCR22−6, MCR22−8

http://onsemi.com

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1000

t, TIME (ms)

1000050000.2 200050020010020 50105.02.01.00.5

0.05

0.1

0.01

0.02

0.07

0.7

0.03

0.1

0.2

0.3

0.5

1.0

Figure 4. Thermal Response

P MAXIMUM AVERAGE POWER DISSIPATION (WATTS)

(AV)

I , HOLDING CURRENT (mA)

HV , GATE TRIGGER VOLTAGE (VOLTS)

I GATE TRIGGER CURRENT (

GT μ

0.4

0.5

0.6

0.7

0.8

100

0.3

-75 -50 0 25 7550-25

TJ, JUNCTION TEMPERATURE (°C)

VAK = 7.0 V

RL = 100

01101006040

TJ, JUNCTION TEMPERATURE (°C)

1.0

5.0

2.0

-40

-20

VAK = 12 V

RL = 100 W

1.0

2.0

3.0

5.0

0-40 -20

20 40 60 80 100

100

110

TJ JUNCTION TEMPERATURE (°C)

1.8

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

2.0

0.2 0.6

IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

1.61.20.40

1.4

120

1.0

90°

0.8

180°

60°

30°

TYPICAL CHARACTERISTICS

Figure 5. Typical Gate Trigger Voltage Figure 6. Typical Gate Trigger Current

Figure 7. Typical Holding Current Figure 8. Power Dissipation

110

MCR22−6, MCR22−8

http://onsemi.com

TO−92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A

P2 P2

P1 P

H2B H2B

H4 H5

Figure 9. Device Positioning on Tape

Item Symbol

Specification

Inches Millimeter

Min Max Min Max

Tape Feedhole Diameter D0.1496 0.1653 3.8 4.2

Component Lead Thickness Dimension D2 0.015 0.020 0.38 0.51

Component Lead Pitch F1, F2 0.0945 0.110 2.4 2.8

Bottom of Component to Seating Plane H.059 .156 1.5 4.0

Feedhole Location H1 0.3346 0.3741 8.5 9.5

Deflection Left or Right H2A 0 0.039 0 1.0

Deflection Front or Rear H2B 0 0.051 0 1.0

Feedhole to Bottom of Component H4 0.7086 0.768 18 19.5

Feedhole to Seating Plane H5 0.610 0.649 15.5 16.5

Defective Unit Clipped Dimension L0.3346 0.433 8.5 11

Lead Wire Enclosure L1 0.09842 −2.5 −

Feedhole Pitch P0.4921 0.5079 12.5 12.9

Feedhole Center to Center Lead P1 0.2342 0.2658 5.95 6.75

First Lead Spacing Dimension P2 0.1397 0.1556 3.55 3.95

Adhesive Tape Thickness T0.06 0.08 0.15 0.20

Overall Taped Package Thickness T1 −0.0567 −1.44

Carrier Strip Thickness T2 0.014 0.027 0.35 0.65

Carrier Strip Width W0.6889 0.7481 17.5 19

Adhesive Tape Width W1 0.2165 0.2841 5.5 6.3

Adhesive Tape Position W2 .0059 0.01968 .15 0.5

NOTES:

1. Maximum alignment deviation between leads not to be greater than 0.2 mm.

2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.

3. Component lead to tape adhesion must meet the pull test requirements.

4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.

5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.

6. No more than 1 consecutive missing component is permitted.

7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.

8. Splices will not interfere with the sprocket feed holes.

MCR22−6, MCR22−8

http://onsemi.com

ORDERING & SHIPPING INFORMATION: MCR22 Series Packaging Options, Device Suffix

U.S.

Europe

Equivalent Shipping†Description of TO−92 Tape Orientation

MCR22−8RL1

2000 / Tape & Reel Flat side of TO−92 and adhesive tape visible

MCR22−8RL1G

MCR22−6

5000 Units / Box N/A, Bulk

MCR22−6G

MCR22−8

MCR22−8G

MCR22−6RLRA

2000 / Tape & Reel Round side of TO−92 and adhesive tape visible

MCR22−6RLRAG

MCR22−6RLRP 2000 / Tape & Ammo Pack Flat side of TO−92 and adhesive tape visible

MCR22−6RLRPG

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MCR22−6, MCR22−8

http://onsemi.com

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX

MILLIMETERS

A4.45 5.20

B4.32 5.33

C3.18 4.19

D0.40 0.54

G2.40 2.80

J0.39 0.50

K12.70 ---

N2.04 2.66

P1.50 4.00

R2.93 ---

V3.43 ---

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

STYLE 10:

PIN 1. CATHODE

2. GATE

3. ANODE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

MCR22−6/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative