NSV1C301ET4G-VF01 - APTINA IMAGING

March, 2016 − Rev. 5 1Publication Order Number:

NSS1C301E/D

NSS1C301ET4G

100 V, 3.0 A, Low VCE(sat)

NPN Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are surface mount devices featuring ultra low saturation

voltage (V CE(sat)) and high current gain capability. These are designed

for use in low voltage, high speed switching applications where

affordable efficient energy control is important.

Typical applications are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

•Complement to NSS1C300ET4G

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Max Unit

Collector−Base Voltage VCBO 140 Vdc

Collector−Emitter Voltage VCEO 100 Vdc

Emitter−Base Voltage VEB 6.0 Vdc

Collector Current − Continuous IC3.0 Adc

Collector Current − Peak ICM 6.0 Adc

Base Current IB0.5 Adc

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

PD33

0.26 W

W/°C

Total Power Dissipation (Note 1)

@ TA = 25°C

Derate above 25°C

PD2.1

0.017 W

W/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

www.onsemi.com

100 VOLTS, 3.0 AMPS

12.5 WATTS

NPN LOW VCE(sat) TRANSISTOR

DPAK

CASE 369C

STYLE 1

123

MARKING DIAGRAM

Y = Year

WW = Work Week

1C31E = Device Code

G = Pb−Free

YWW

1C31EG

COLLECTOR

2, 4

BASE

EMITTER

Device Package Shipping†

ORDERING INFORMATION

NSS1C301ET4G DPAK

(Pb−Free) 2500/

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NSV1C301ET4G DPAK

(Pb−Free) 2500/

Tape & Reel

NSS1C301ET4G

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 3.8 °C/W

Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 59.5 °C/W

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mA, IB = 0) V(BR)CEO 100 − − V

Collector−Base Breakdown Voltage

(IC = 0.1 mA, IE = 0) V(BR)CBO 140 − − V

Emitter−Base Breakdown Voltage

(IE = 0.1 mA, IC = 0) V(BR)EBO 6.0 − − V

Collector Cutoff Current

(VCB = 140 V, IE = 0) ICBO − − 0.1 mA

Emitter Cutoff Current

(VEB = 6.0 V) IEBO − − 0.1 mA

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 0.1 A, VCE = 2.0 V)

(IC = 0.5 A, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

(IC = 3.0 A, VCE = 2.0 V)

hFE 200

200

120

−

360

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 0.1 A, IB = 10 mA)

(IC = 1.0 A, IB = 0.100 A)

(IC = 2.0 A, IB = 0.200 A)

(IC = 3.0 A, IB = 0.300 A)

VCE(sat) −

−

0.015

0.045

0.080

0.115

0.050

0.090

0.150

0.250

Base−Emitter Saturation Voltage (Note 3)

(IC = 1.0 A, IB = 0.1 A) VBE(sat) − − 1.0 V

Base−Emitter Turn−on Voltage (Note 3)

(IC = 1.0 A, VCE = 2.0 V) VBE(on) − − 0.90 V

Cutoff Frequency

(IC = 500 mA, VCE = 10 V, f = 100 MHz) fT− 120 − MHz

Input Capacitance

(VEB = 5.0 V, f = 1.0 MHz) Cibo − 360 − pF

Output Capacitance

(VCB = 10 V, f = 1.0 MHz) Cobo − 30 − pF

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NSS1C301ET4G

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TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (A)

1010.10.01

150

200

300

350

450

500

1010.10.01

0.1

0.2

0.3

0.4

Figure 3. Collector−Emitter Saturation

Voltage Figure 4. Collector−Emitter Saturation

Voltage

IC, COLLECTOR CURRENT (A)

1010.10.01

0.1

0.2

0.3

0.4

Figure 5. Base−Emitter Saturation Voltage Figure 6. Base−Emitter “On” Voltage

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.01

0.2

0.4

0.6

0.8

1.0

1.2

1010.10.01

0.2

0.4

0.6

0.8

1.0

1.2

hFE, DC CURRENT GAIN

VBE(on), BASE−EMITTER

ON VOLTAGE (V)

100

250

400

VCE = 2 V

150°C

25°C

−55°C

150°C

25°C

−55°C

IC/IB = 10

IC, COLLECTOR CURRENT (A)

1010.10.01

150

200

300

350

450

500

hFE, DC CURRENT GAIN

100

250

400

VCE = 5 V

150°C

25°C

−55°C

150°C

25°C

−55°C

IC/IB = 50

150°C

25°C

−55°C

IC/IB = 10 VCE = 2 V

150°C

25°C

−55°C

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

NSS1C301ET4G

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TYPICAL CHARACTERISTICS

Figure 7. Collector Saturation Region Figure 8. Capacitance

IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V)

10,0001,0001001010.1

0.2

0.4

0.6

1.0

1.2

1.4

1.6

1001010.1

100

1,000

Figure 9. Current−Gain−Bandwidth Product Figure 10. Safe Operating Area

IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)

1010.10.01

100

1,000

100101

0.01

0.1

VCE, COLLECTOR−EMITTER

VOLTAGE (V)

C, CAPACITANCE (pF)

fT, CURRENT−GAIN−BANDWIDTH

PRODUCT (MHz)

IC, COLLECTOR CURRENT (A)

0.8

TA = 25°C

IC = 0.1 A

IC = 0.5 A

IC = 1 A

IC = 2 A

IC = 3 A

Cib

Cob

VCE = 5 V

1 S

10 mS

100 mS

1 mS

100 mS

Single Pulse Test at TA = 25°C

Figure 11. Typical Transient Thermal Response, Junction−to−Case

t, PULSE TIME (s)

R(t), TRANSIENT THERMAL RESPONSE

(°C/W)

D = 0.5

0.1

0.05

0.01

Single Pulse

0.2

0.02

0.01

0.1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 1

RqJC(t) = r(t) RqJC

RqJC = 3.8°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

DPAK (SINGLE GAUGE)

CASE 369C

ISSUE F

DATE 21 JUL 2015

SCALE 1:1

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

STYLE 3:

PIN 1. ANODE

2. CATHODE

3. ANODE

4. CATHODE

STYLE 4:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

STYLE 5:

PIN 1. GATE

2. ANODE

3. CATHODE

4. ANODE

STYLE 6:

PIN 1. MT1

2. MT2

3. GATE

4. MT2

STYLE 7:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

STYLE 8:

PIN 1. N/C

2. CATHODE

3. ANODE

4. CATHODE

STYLE 9:

PIN 1. ANODE

2. CATHODE

3. RESISTOR ADJUST

4. CATHODE

STYLE 10:

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. ANODE

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.028 0.045 0.72 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

7. OPTIONAL MOLD FEATURE.

12 3

XXXXXX = Device Code

A = Assembly Location

L = Wafer Lot

Y = Year

WW = Work Week

G = Pb−Free Package

AYWW

XXX

XXXXXG

XXXXXXG

ALYWW

DiscreteIC

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

ǒmm

inchesǓ

SCALE 3:1

GENERIC

MARKING DIAGRAM*

*This information is generic. Please refer

to device data sheet for actual part

marking.

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.114 REF 2.90 REF

L2 0.020 BSC 0.51 BSC

DETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

BOTTOM VIEW

SIDE VIEW

TOP VIEW

ALTERNATE

CONSTRUCTIONS

NOTE 7

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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DPAK (SINGLE GAUGE)

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