www.vishay.com Document Number: 91215
2S11-0487-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP260, SiHFP260
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -40
°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.24 -
Maximum Junction-to-Case (Drain) RthJC -0.45
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.24 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 200 V, VGS = 0 V - - 25 μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 28 Ab--0.055
Ω
Forward Transconductance gfs VDS = 50 V, ID = 28 Ab24 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 5200 -
pFOutput Capacitance Coss - 1200 -
Reverse Transfer Capacitance Crss - 310 -
Total Gate Charge Qg
VGS = 10 V ID = 46 A, VDS = 160 V,
see fig. 6 and 13b
- - 230
nC Gate-Source Charge Qgs --42
Gate-Drain Charge Qgd - - 110
Turn-On Delay Time td(on)
VDD = 100 V, ID = 46 A,
Rg = 4.3 Ω, RD = 2.1 Ω, see fig. 10b
-23-
ns
Rise Time tr - 120 -
Turn-Off Delay Time td(off) - 100 -
Fall Time tf -94-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-5.0-
nH
Internal Source Inductance LS-13-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--46
A
Pulsed Diode Forward CurrentaISM - - 180
Body Diode Voltage VSD TJ = 25 °C, IS = 46 A, VGS = 0 Vb--1.8V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 46 A, dI/dt = 100 A/μsb- 390 590 ns
Body Diode Reverse Recovery Charge Qrr -4.87.2μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G