2N5460
Silicon P−Channel JFET Transistor
General Purpose AF Amplifier
TO92 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Gate Voltage, VDG 40V............................................................
Reverse Gate−Source Voltage, VGSR 40V.................................................
Forward Gate Current, IG(f) 10mA........................................................
Total Device Dissipation (TA = +25C), PD350mW.........................................
Derate Above 25C 2.8mW/C.....................................................
Operating Junction Temperature Range, TJ−65 to +135C..................................
Storage Temperature Range, Tstg −55 to +150C..........................................
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate−Source Breakdown Voltage V(BR)GSS IG = 10A, VDS = 0 40 − − V
Gate Reverse Current IGSS VGS = 20V, VDS = 0 − − 5 nA
VGS = 20V, VDS = 0, TA = +100C− − 1A
Gate−Source Cutoff Voltage VGS(off) ID = 1A, VDS = 15V 0.75 −6.0 V
Gate−Source Voltage VGS ID = 0.1mA, VDS = 15V 0.5 −4.0 V
ON Characteristics
Zero−Gate−Voltage Drain Current IDSS VDS = 15V, VGS = 0, f = 1kHz −1− −5 mA
Small−Signal Characteristics
Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 1000 −4000 mho
Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz − − 75 mho
Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1MHz −5 7 pF
Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1MHz −1 2 pF
Functional Characteristics
Equivalent Short−Circuit Input Noise
Voltage
enVDS = 15V, VGS = 0, f = 100Hz,
BW = 1Hz
−60 115 nV/pHz
.021 (.445) Dia Max
S D G
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
G
D
S
