RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
*Power dissipation
Pcm: 0.2 W (Tamb=25OC)
Icm: 0.6 A
V(BR)CBO: 75 V
TJ,Tstg: -55OCto +150OC
*Collector current
*Collector-base voltage
*
MECHANICAL DATA
* Case: Molded plastic
MMST2222A
Operationg and storage junction temperature range
SOT-323
0.081(2.05)
0.012(0.30)
0.077(1.95)
0.052(1.33)
0.050(1.27)
0.089(2.25)
0.092(2.35)
REF .040(1.01)
0.051(1.30)
0.047(1.20)
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
Max. Instantaneous Forward Voltage at IF= 10mA
CHARACTERISTICS SYMBOL UNITS
625
-
Volts
oC/WThermal Resistance Junction to Ambient
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation @TA=25oC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
PD
TJ
TSTG
R θJA
VF
VALUE
MAX.
-
-
TYP.
-
-
MIN.
UNITS
-
mW
-
200
-55 to +150
-55 to +150
oC
oC
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
*Epoxy: UL 94V-O rate flame retardant
*Lead: MIL-STD-202E method 208C guaranteed
*Mounting position: Any
*Weight: 0.006 gram
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= 10mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 10µAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 10µAdc, IC= 0)
Collector Cutoff Current (VCE= 60Vdc,VEB(off)= 3.0Vdc
Collector Cutoff Current (VCB= 60Vdc, IE= 0)
(VCB= 60Vdc, IE= 0, TA= 125OC)
Emitter Cutoff Current (VEB= 3.0Vdc, IC= 0)
Base Cutoff Current (VCE= 60Vdc, VEB(off)= 3.0Vdc
DC Current Gain (IC= 100µA, VCE= 10Vdc)
Collector-Emitter Saturation Voltage (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, IB= 50mAdc)
(IC= 1.0mAdc, VCE= 10Vdc)
(IC= 10mAdc, VCE= 10Vdc)
(IC= 150mAdc, VCE= 10Vdc)
(IC= 500mAdc, VCE= 10Vdc)
(IC= 10mAdc, VCE= 10Vdc,TA=-55OC)
(IC= 150mAdc, VCE= 1.0Vdc)
V(BR)CEO 40 - Vdc
V(BR)CBO 75 - Vdc
V(BR)EBO 6.0 - Vdc
Vdc
Vdc
ICEX
ICBO
IEBO
IBL
- 10
-10
-
-
-
10
10
20
µAdc
nAdc
nAdc
nAdc
fT300 - MHz
hFE
35 -
-
50 -
VCE(sat)
75 -
100 300
µAdc
Symbol Min Max Unit
Base-Emitter Saturation Voltage (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, IB= 50mAdc)
Current-Gain-Bandwidth Product (IC= 20mAdc, VCE= 20Vdc, f= 100MHz)
Cibo
Cobo
- 25 pF
pF
td
tr
ts
tf
NF -
-
-
-
-
4.0
ns
dB
ns
- 8
225
60
10
25
Input Capacitance (VEB=0.5Vdc, IC= 0, f= 1.0MHz)
Output Capacitance (IE= 0, VCB= 10Vdc, f= 1.0MHz)
Noise Figure (IC= 100µAdc, VCE= 10Vdc, RS= 1.0k
Ω
, f= 1.0kHz)
(VCC= 30Vdc, VBE(off)= 0.5Vdc, IC= 150mAdc, IB1= 15mAdc)
(VCC= 30Vdc, IC= 150mAdc, IB1= IB2= 15mAdc)
VBE(sat)
40 -
50
35
-
-
-
-
0.3
1.0
0.6
-
1.2
2.0
Delay Time
Rise Time
Storage Time
Fall Time
RECTRON
NOTES : 1. Short duration test pulse used to minimize self-heating effect.
