Mar
.
2013.
Ver
sion 2.1
MagnaC
hip Semiconducto
r Ltd
.
1
MP
KB
2CA/CB 10
0U
60
60
0V
FRD Module
A
bsolute Maximum Ra
tings
@Tc = 25
o
C (Per
Leg)
Characterist
ics
Conditions
Symbol
Rating
Unit
Repetitive Peak
Reverse Voltag
e
V
RRM
60
0
V
Reverse DC Vol
tage
V
R(DC)
480
V
Average Forw
ard
Current
T
C
=25
o
C
Resistive Load
I
F(AV)
2
00
A
T
C
=
10
0
o
C
100
A
Surge(non-r
epetitive) Forw
ard
Curre
nt
One Half Cy
cle at 60Hz,
Peak Value
I
FSM
140
0
A
I
2
t for Fusing
Value for One Cy
cle Curren
t,
t
w
= 8.3ms, T
j
= 25
℃
Start
I
2
t
16
.2* 10
3
A
2
s
Junction
T
e
mperature
T
J
-40 ~ 150
℃
Maximum Pow
er Dissipation
P
D
360
W
Isolation
Voltage
@AC 1 minutes
V
isol
2500
V
Storage Temper
ature
T
stg
-40 ~ 150
℃
Mounting Torqu
e(M6)
-
4.0
N.m
Terminal Torque(M
5)
Typical Including
Screws
-
2.0
N.m
Weight
-
120
g
Product
Name
MPKB2CA100U60
MPKB2CB100U60
Optional
Information
Center Comm
on
& N-type
Center Comm
on
& P-type
MP
KB
2C
A
/
CB10
0U
60
60
0V FRD Module
General Description
Ultra-FRD module devices ar
e optimized to reduce losses
and
EMI/RFI in high frequency po
wer conditioning electrica
l
systems.
These diode modules ar
e ideally suited for power con
verters,
motors drives and othe
r applications where switching
losses
are significant portion of the t
otal losses.
Features
Repeti
tive Reverse V
oltage : V
RRM
=
60
0V
Low Forward V
o
ltage
: V
F
(typ.)
=
1.
45
V
Average Forward Current : I
F
(
Av
.)=100A
@T
C
=100
℃
Ultra-Fast
Reverse Recovery
T
ime : t
rr
(typ.) =
35
ns
E
x
tensive Characterization of Recovery Parameters
Reduc
ed EM
I and RFI
Iso
lation T
ype Package
A
pplications
High Sp
eed & High Power converters,
Welders
V
arious
Switching and
T
elecommunication Power Supply
5
DM
-1
E
301932
Ordering Information
Mar
.
2013.
Ver
sion 2.1
MagnaC
hip Semiconducto
r Ltd
.
2
MP
KB
2CA/CB 10
0U
60
60
0V
FRD Module
Electrical Characteristics
@Tc = 25
o
C
(unle
ss otherwise
specified)
Characterist
ics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Cathode Anode
Breakdow
n Voltage
I
R
=100uA
V
R
60
0
-
-
V
Diode Max
imum Forward
Voltage
I
F
=1
0
0A
T
C
=25
℃
V
FM
-
1.45
1.
8
V
T
C
=100
℃
-
1.35
-
Diode Peak Rev
erseRecovery
Current
T
c
=100
℃
,
V
RRM
applied
T
C
=100
℃
I
RRM
-
-
1.0
mA
Diode Reve
rse Recovery Ti
me
I
F
=1
A,
V
R
=30V
di/dt = -200A/uS
T
C
=
25
℃
t
rr
-
35
50
ns
Diode Reve
rse Recovery Ti
me
I
F
=100
A,
V
R
=3
00V
di/dt = -200A/uS
T
C
=25
℃
t
rr
-
90
130
ns
T
C
=100
℃
-
160
-
Thermal Characteristics
Characterist
ics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Thermal Resistan
ce(Isolation Typ
e)
J
un
ction to Case
R
th(j-c)
-
-
0.34
℃
/W
Mar
.
2013.
Ver
sion 2.1
MagnaC
hip Semiconducto
r Ltd
.
3
MP
KB
2CA/CB 10
0U
60
60
0V
FRD Module
Fig.1 T
ypical Forward V
oltage Drop
vs. Instantaneous Forw
ard Current
Fig.2 T
ypical Reverse R
ecovery Time
V
s.
–
di/dt
Fig.3 T
ransient T
hermal I
mpedance(Zthjc)
Characteristics
Fig.4 Forward Cur
rent Derating Curve
100
200
300
400
500
0
30
60
90
120
150
Reverse R
ecovery Time[ns]
di/dt[A/us]
0.0
0.5
1.0
1.5
2.0
0
50
100
150
200
250
300
Forward Current,I
F
[A]
T
C
=25
℃
T
C
=125
℃
Forward Voltage
Drop,V
F
[V]
0
20
40
60
80
100
120
140
160
0
50
100
150
200
250
DC
Average Forward
Current,I
F(AVG)
[A]
Case Temperatute, Tc[
℃
]
1E-5
1E-4
1E-3
0.01
0.1
1
10
1E-4
1E-3
0.01
0.1
1
T
C
=25
℃
Thermal Response Zthjc[
℃
/W]
Rectangular Pulse Duration
Time[sec]
Mar
.
2013.
Ver
sion 2.1
MagnaC
hip Semiconducto
r Ltd
.
4
MP
KB
2CA/CB 10
0U
60
60
0V
FRD Module
Package Dimension
5
DM
-1
Dimensions are in mil
limeters, unless ot
herwise specified
T
BD
T
BD
MA
X
23.
5
15.
0±
0
.5
Mar
.
2013.
Ver
sion 2.1
MagnaC
hip Semiconducto
r Ltd
.
5
MP
KB
2CA/CB 10
0U
60
60
0V
FRD Module
DISCLAIMER:
The
Products
are
not
designed
for
use
in
hostile
environments,
including,
without
limitation,
aircraft,
nu
clear
power
generation,
medical
appliances,
and
devices
or
systems
in
which
malfunction
of
any
Product
can
reasonably
be
expected
to
result
in
a
personal
injury.
Seller’s
customers
using
or
selling
Seller’s
products
for
use
in
su
ch
applications do so at their own risk and agree to fully defend and indemnify
Seller.
MagnaC
hip reserves
the
right to
change the
specifications and
circuitry without notice
at
any time.
Mag
naChip does
not
consider
respo
nsibility
for
use
of
any
c
ircuitry
o
ther
than
cir
cuitry
entirely
included
in
a
MagnaChip
product.
is
a
registered
trademark
of
MagnaCh
ip
Semiconductor
Ltd.
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