BAS40, BAS40-04, BAS40-05, BAS40-06 BAS40, BAS40-04, BAS40-05, BAS40-06 Surface Mount Schottky Barrier Single/Double Diodes Schottky-Barrier Einzel-/Doppel-Dioden fur die Oberflachenmontage Version 2005-06-21 1.1 2.9 0.1 0.4 1.3 2.5 Type Code 0.1 max 3 2 1 Power dissipation - Verlustleistung 310 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 40 V Plastic case Kunststoffgehause SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 1.9 Dimensions - Mae [mm] Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) per diode / pro Diode BAS40-series Power dissipation - Verlustleistung 1) Ptot 310 mW 2) Max. average forward current (dc) Dauergrenzstrom IFAV 200 mA 2) Repetitive peak forward current Periodischer Spitzenstrom IFRM 300 mA 2) IFSM 0.6 A VRRM 40 V Tj TS -55...+150C -55...+150C Non repetitive peak forward surge current Stostrom-Grenzwert tp 1 s Repetitive peak reverse voltage Periodische Spitzensperrspannung Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25C) Kennwerte (Tj = 25C) 3 Forward voltage ) Durchlass-Spannung 3) IF = 1 mA IF = 10 mA IF = 40 mA VF VF VF < 380 mV < 500 mV < 1.00 V Leakage current Sperrstrom VR = 30 V VR = 40 V IR IR < 200 nA < 10 A Max. junction capacitance - Max. Sperrschichtkapazitat VR = 0 V, f = 1 MHz CT 5 pF Reverse recovery time - Sperrverzug IF = 10 mA uber/through IR = 10 mA bis/to IR = 1 mA trr < 5 ns RthA < 400 K/W 2) Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft 1 2 3 Total power dissipation of both diodes - Summe der Verlustleistungen beider Dioden Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BAS40, BAS40-04, BAS40-05, BAS40-06 Pinning - Anschlussbelegung 3 1 Single Diode Einzeldiode 1=A 2 3 1 1 = A1 3 3=C 2 = C2 BAS40-04 = 44 3 = C1/A2 Dual diode, common cathode Doppeldiode, gemeinsame Katode 1 = A1 2 3 1 2 = n.c./frei BAS40 = 43 Dual diode, series connection Doppeldiode, Reihenschaltung 2 1 Marking - Stempelung 2 = A2 BAS40-05 = 45 3 = C1/C2 Dual diode, common anode Doppeldiode, gemeinsame Anode 1 = C1 2 2 = C2 BAS40-06 = 46 3 = A1/A2 120 1 [%] [A] 100 10-1 80 60 10-2 40 10-3 20 IF Ptot 0 0 TA 50 100 150 [C] 10-4 Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von der Umgebungstemp.1) 2 http://www.diotec.com/ Tj = 25C 0 VF 0.4 0.6 0.8 1.0 [V] 1.4 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) (c) Diotec Semiconductor AG