2011-09-15
1
BGA427
in SIEGET 25-Technologie
Si-MMIC-Amplifie
r
1
2
3
4
• Cascadable 50 Ω-gain block
• Unconditionally stable
• Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1)
gain |S21|2 = 22 dB at 1.8 GHz (Appl.2)
IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• Typical device voltage VD = 2 V to 5 V
• Reverse isolation > 35 dB (Appl.2)
• Pb-free (RoHS compliant) package
EHA07378
V
2
1
IN
OUT
+
4
3
GND
Circuit Diagram
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BGA427 BMs 1, IN 2, GND 3, +V 4, Out SOT343
Maximum Ratings
Parameter Symbol Value Unit
Device current ID25 mA
Device voltage VD,+V 6 V
Total power dissipation
TS = 120 °C
Ptot 150 mW
RF input power PRFin -10 dBm
Junction temperature Tj150 °C
Ambient temperature range TA-65 ... 150
Storage temperature range Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS ≤ 295 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
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BGA427
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics VD = 3 V, Zo = 50Ω, Testfixture Appl.1
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
|S21|2
-
-
-
27
22
18.5
-
-
-
dB
Reverse isolation
f = 1.8 GHz
S12 - 22 -
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
NF
-
-
-
1.9
2
2.2
-
-
-
Intercept point at the output
f = 1.8 GHz
IP3out -+ 7 - dBm
Return loss input
f = 1.8 GHz
RLin - >12 - dB
Return loss output
f = 1.8 GHz
RLout - >9 -
Typical configuration
Appl.2Appl.1
EHA07380
2.2 pF
100 pF
RF IN
100 pF
GND
RF OUT
100 nH
10 nF 100 pF
+V
BGA 427
EHA07379
100 pF
100 pF
1 nF
RF OUT
RF IN GND
+V
BGA 427
Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device
to provide a low impedance path (appl.1).
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground.
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BGA427
S-Parameters at TA = 25 °C, (Testfixture, Appl.1)
fS11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
VD = 3V, Zo = 50Ω
0.1
0.2
0.5
0.8
0.9
1
1.5
1.8
1.9
2
2.5
3
0.1382
0.1179
0.1697
0.1824
0.1782
0.176
0.1827
0.1969
0.2021
0.2116
0.2437
0.258
-38.3
-16
-20.8
-56.9
-69.1
-80.6
-133.5
-156.1
-162.8
-167.7
172.8
153.3
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
164.9
158.9
135.2
115.4
109.4
104
84.9
77
74.7
72.3
63
55
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
0.6435
0.6278
0.54
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131
Spice-model BGA 427
EHA07381
3
RR
1
P1
C
P2
C
1
C
R
2
P3
CC
P4 P5
CR
4
11
14
13
T2
12
C’-E’-
including parasitics
Diode OUT
BGA 427-chip
IN
GND
+V
T1
T1 T501
T2 T501
R114.5kΩ
R2280Ω
R32.4kΩ
R4170Ω
C12.3pF
CP1 0.2pF
CP2 0.2pF
CP3 0.6pF
CP4 0.1pF
CP5 0.1pF
C'-E'-diode T1
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BGA427
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
BF = 83.23 -
IKF = 0.16493 A
BR = 10.526 -
IKR = 0.25052 A
RB = 15 Ω
RE = 1.9289
VJE = 0.70367 V
XTF = 0.3641 -
PTF = 0 deg
MJC = 0.48652 -
CJS = 0fF
XTB = 0-
FC = 0.99469 -
NF = 1.0405 -
ISE = 15.761 fA
NR = 0.96647 -
ISC = 0.037223 fA
IRB = 0.21215 A
RC = 0.12691 Ω
MJE = 0.37747 -
VTF = 0.19762 V
CJC = 96.941 fF
XCJC = 0.08161 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
IS = 0.21024 fA
VAF = 39.251 V
NE = 1.7763 -
VAR = 34.368 V
NC = 1.3152 -
RBM = 1.3491 Ω
CJE = 3.7265 fF
TF = 4.5899 ps
ITF = 1.3364 mA
VJC = 0.99532 V
TR = 1.4935 ns
MJS = 0-
XTI = 3-
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
RS = 20 Ω
IS = 2 fA N = 1.02 -
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
LBI = 0.36 nH
LBO = 0.4 nH
LEI = 0.3 nH
LEO = 0.15 nH
LCI = 0.36 nH
LCO = 0.4 nH
CBE = 95 fF
CCB = 6 fF
CCE = 132 fF
C1 =28 fF
C2 =88 fF
C3 = 8 fF
L1 = 0.6 nH
L
2
= 0.4 nH
EHA07382
L
BI
1
C
BE
C
BO
L
EI
L
L
EO
CB
C
CI
L
C
3
CO
L
CE
C
Chip
11 13
12 C’-E’-
IN
Diode
C
2
2
LOUT
L
1
14
+V
GND
BGA 427
Valid up to 3GHz
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
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BGA427
Noise figure NF = f (f)
VD,ID = parameter
10 -1 10 0 10 1
GHz
RTF-1
0
0.5
1
1.5
2
2.5
3
3.5
4
dB
5
RTF-2
VD=5V, ID=17.5mA
VD=3V, ID=9.5mA
Insertion power gain |S21|2 = f (f)
VD, ID = parameter
10 -1 10 0 10 1
GHz
f
0
5
10
15
20
25
dB
35
|S21|2
Intercept point at the output
IP3out = f (f)
VD,ID = parameter
10 -1 10 0 10 1
GHz
f
0
5
10
15
dBm
25
IP3out
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BGA427
Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
2
±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1
M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2011-09-15
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BGA427
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
