C3M0075120D VDS 1200 V ID @ 25C Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 30 A 75 m N-Channel Enhancement Mode Features * * * * * Package C3MTM SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits * * * * Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications * * * * Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking C3M0075120D TO-247-3 C3M0075120 Maximum Ratings (TC = 25 C unless otherwise specified) Symbol Parameter Unit Test Conditions 1200 V VGS = 0 V, ID = 100 A Note VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 VGS = 15 V, TC = 25C Fig. 19 ID Continuous Drain Current ID(pulse) Pulsed Drain Current PD TJ , Tstg 30 19.7 A VGS = 15 V, TC = 100C 80 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 113.6 W TC=25C, TJ = 150 C Fig. 20 Operating Junction and Storage Temperature -55 to +150 C TL Solder Temperature 260 C Md Mounting Torque 1 8.8 Nm lbf-in Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 1 Value C3M0075120D Rev. A, 02-2019 1.6mm (0.063") from case for 10s M3 or 6-32 screw Electrical Characteristics (TC = 25C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Min. Drain-Source Breakdown Voltage Typ. Max. Unit V VGS = 0 V, ID = 100 A 2.5 4.0 V VDS = VGS, ID = 5 mA V VDS = VGS, ID = 5 mA, TJ = 150C 1200 1.7 Gate Threshold Voltage 2.0 Test Conditions IDSS Zero Gate Voltage Drain Current 1 100 A VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 75 90 RDS(on) Drain-Source On-State Resistance 105 9.0 gfs Transconductance Ciss Input Capacitance Coss Output Capacitance 58 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 35 EON Turn-On Switching Energy (SiC Diode FWD) 564 EOFF Turn Off Switching Energy (SiC Diode FWD) 186 EON Turn-On Switching Energy (Body Diode FWD) 924 EOFF Turn Off Switching Energy (Body Diode FWD) 162 td(on) Turn-On Delay Time 56 Rise Time 17 Turn-Off Delay Time 32 Fall Time 13 tr td(off) tf RG(int) m S 8.3 VGS = 15 V, ID = 20 A VGS = 15 V, ID = 20A, TJ = 150C VDS= 20 V, IDS= 20 A VDS= 20 V, IDS= 20 A, TJ = 150C Note Fig. 11 Fig. 4, 5, 6 Fig. 7 1350 Internal Gate Resistance pF f = 1 MHz J 10.5 Qgs Gate to Source Charge 17 Qgd Gate to Drain Charge 20 Qg Total Gate Charge 54 VGS = 0 V, VDS = 1000 V VAC = 25 mV Fig. 17, 18 Fig. 16 J VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0, L= 157 H, TJ = 150C Fig. 26, 29 J VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0, L= 157 H, TJ = 150C Fig. 26, 29 ns VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 , Timing relative to VDS Inductive load Fig. 27, 28 f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12 Reverse Diode Characteristics (TC = 25C unless otherwise specified) Symbol VSD IS IS, pulse Parameter Diode Forward Voltage Typ. Max. Unit Test Conditions Note 4.1 V VGS = -4 V, ISD = 10 A 3.75 V VGS = -4 V, ISD = 10 A, TJ = 150 C A VGS = -4 V, TJ = 25 C Note 1 VGS = -4 V, pulse width tP limited by Tjmax Note 1 VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 2800 A/s, TJ = 150 C Note 1 Continuous Diode Forward Current 25.3 Diode pulse Current 80 A trr Reverse Recover time 48 ns Qrr Reverse Recovery Charge 279 nC Irrm Peak Reverse Recovery Current 9 A Fig. 8, 9, 10 Thermal Characteristics Parameter Typ. Max. RJC Thermal Resistance from Junction to Case 0.97 1.1 RJA Thermal Resistance From Junction to Ambient Symbol 2 C3M0075120D Rev. A, 02-2019 40 Unit C/W Test Conditions Note Fig. 21 Typical Performance 90 80 VGS = 13V 70 60 50 VGS = 11V 40 30 20 Conditions: TJ = 25 C tp = < 200 s 80 VGS = 15V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 90 Conditions: TJ = -55 C tp = < 200 s VGS = 9V 10 VGS = 15V VGS = 13V 70 60 VGS = 11V 50 40 30 VGS = 9V 20 10 VGS = 7V 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS = 7V 0 10.0 0.0 1.0 2.0 3.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 C 90 1.6 70 60 VGS = 15V VGS = 11V 50 40 VGS = 9V 30 20 VGS = 7V 10 8.0 9.0 10.0 1.4 1.2 1.0 0.8 0.6 0.4 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -50 10.0 -25 0 Figure 3. Output Characteristics TJ = 150 C 140 200 160 On Resistance, RDS On (mOhms) TJ = -55 C 80 TJ = 25 C 60 75 100 125 150 Conditions: IDS = 20 A tp < 200 s 180 TJ = 150 C 100 50 Figure 4. Normalized On-Resistance vs. Temperature Conditions: VGS = 15 V tp < 200 s 120 25 Junction Temperature, TJ (C) Drain-Source Voltage, VDS (V) On Resistance, RDS On (mOhms) 7.0 0.2 0 40 20 140 VGS = 11 V 120 100 VGS = 13 V 80 VGS = 15 V 60 40 20 0 0 0 10 20 30 40 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 6.0 Conditions: IDS = 20 A VGS = 15 V tp < 200 s 1.8 On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) 2.0 VGS = 13V 5.0 Figure 2. Output Characteristics TJ = 25 C Conditions: TJ = 150 C tp = < 200 s 80 4.0 Drain-Source Voltage, VDS (V) C3M0075120D Rev. A, 02-2019 50 60 -50 -25 0 25 50 75 100 Junction Temperature, TJ (C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 80 -8 -6 -4 -2 0 0 Drain-Source Current, IDS (A) 70 Drain-Source Current, IDS (A) -10 Conditions: VDS = 20 V tp < 200 s 60 50 TJ = 25 C 40 TJ = 150 C TJ = -55 C 30 20 -10 VGS = -4 V -20 VGS = 0 V -30 VGS = -2 V -40 -50 -60 10 Conditions: TJ = -55C tp < 200 s 0 0 2 4 6 8 10 12 14 Figure 7. Transfer Characteristic for Various Junction Temperatures -4 Figure 8. Body Diode Characteristic at -55 C -2 0 -10 -4 -2 0 -10 -10 -20 -30 VGS = -2 V -6 0 VGS = -4 V VGS = 0 V -8 0 -40 -50 Drain-Source Current, IDS (A) -6 Drain-Source Current, IDS (A) -8 VGS = -4 V -20 VGS = 0 V -30 VGS = -2 V -40 -50 -60 Conditions: TJ = 25C tp < 200 s Drain-Source Voltage VDS (V) -60 Conditions: TJ = 150C tp < 200 s -70 -80 Drain-Source Voltage VDS (V) Figure 9. Body Diode Characteristic at 25 C Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 Junction Temperature TJ (C) Figure 11. Threshold Voltage vs. Temperature 4 Conditions: IDS = 20 A IGS = 50 mA VDS = 800 V TJ = 25 C 12 3.0 -25 C3M0075120D Rev. A, 02-2019 -80 16 Conditons VGS = VDS IDS = 5 mA 3.5 -70 Figure 10. Body Diode Characteristic at 150 C 4.0 -50 -80 Drain-Source Voltage VDS (V) Gate-Source Voltage, VGS (V) -10 -70 150 8 4 0 -4 0 10 20 30 40 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 50 60 Typical Performance -6 -5 -3 -4 -2 -1 0 VGS = 0 V -8 -6 -5 -4 -3 -2 -1 0 0 -10 -10 -20 VGS = 5 V -7 0 -30 VGS = 10 V -40 VGS = 15 V -50 Drain-Source Current, IDS (A) -7 Drain-Source Current, IDS (A) -8 VGS = 0 V -20 VGS = 5 V -30 VGS = 10 V -40 VGS = 15 V -50 -60 Conditions: TJ = -55 C tp < 200 s -60 Conditions: TJ = 25 C tp < 200 s -70 -80 Drain-Source Voltage VDS (V) -7 -8 -6 -5 -4 -3 -1 -2 Figure 14. 3rd Quadrant Characteristic at 25 C 40 0 0 35 -10 -20 VGS = 5 V VGS = 10 V -30 VGS = 15 V -40 -50 30 Stored Energy, EOSS (J) Drain-Source Current, IDS (A) VGS = 0 V -60 Conditions: TJ = 150 C tp < 200 s Drain-Source Voltage VDS (V) 25 20 15 10 5 -70 0 0 -80 200 600 800 1000 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz 10000 Ciss Ciss 1000 Capacitance (pF) Capacitance (pF) 400 Drain to Source Voltage, VDS (V) Figure 15. 3rd Quadrant Characteristic at 150 C 10000 -80 Drain-Source Voltage VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 C -70 Coss 100 1000 Coss 100 Crss 10 1 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 Crss 10 C3M0075120D Rev. A, 02-2019 200 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1000V) 1000 Typical Performance Drain-Source Continous Current, IDS (DC) (A) 35 120 Conditions: TJ 150 C Conditions: TJ 150 C Maximum Dissipated Power, Ptot (W) 30 25 20 15 10 5 100 0 -55 -30 -5 20 45 70 95 120 80 60 40 20 0 145 -55 Case Temperature, TC (C) -30 -5 20 45 70 95 120 145 Case Temperature, TC (C) Figure 19. Continuous Drain Current Derating vs. Case Temperature Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 1 0.5 Limited by RDS On Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 100.00 0.3 0.1 100E-3 0.05 0.02 0.01 10E-3 SinglePulse 1 ms 100 ms 1.00 0.10 Conditions: TC = 25 C D = 0, Parameter: tp 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1 0.1 10 1 1.6 Switching Loss (mJ) 1.4 Conditions: TJ = 25 C VDD = 800 V RG(ext) = 0 VGS = -4V/+15 V FWD = C3M0075120D L = 157 H ETotal 2.5 1.2 Switching Loss (mJ) 1.8 EOn 1.0 0.8 0.6 EOff 0.4 100 1000 Figure 22. Safe Operating Area 3.0 Conditions: TJ = 25 C VDD = 600 V RG(ext) = 0 VGS = -4V/+15 V FWD = C3M0075120D L = 157 H 10 Drain-Source Voltage, VDS (V) Figure 21. Transient Thermal Impedance (Junction - Case) 2.0 10 s 100 s 10.00 2.0 ETotal EOn 1.5 1.0 EOff 0.5 0.2 0.0 0.0 0 10 20 30 40 Drain to Source Current, IDS (A) Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 6 C3M0075120D Rev. A, 02-2019 50 0 5 10 15 20 25 30 35 40 Drain to Source Current, IDS (A) Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 45 Typical Performance 1.4 1.2 Switching Loss (mJ) 1.6 Conditions: TJ = 25 C VDD = 800 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0075120D L = 157 H 1.0 1.2 EOn 0.8 0.6 0.4 EOff 0.2 1.0 ETotal EOn 0.8 ETotal 0.6 EOn 0.4 EOff 0.2 0.0 EOff 0.0 0 10 5 15 20 25 External Gate Resistor RG(ext) (Ohms) 120 Conditions: TJ = 25 C VDD = 800 V IDS = 20 A VGS = -4V/+15 V FWD = C3M0075120D L = 157 H 100 80 0 25 50 75 100 125 Figure 26. Clamped Inductive Switching Energy vs. Temperature td(on) td(off) 60 tr 40 tf 20 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 C3M0075120D Rev. A, 02-2019 150 Junction Temperature, TJ (C) Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Switching Times (ns) Conditions: IDS = 20 A VDD = 800 V RG(ext) = 0 VGS = -4V/+15 V FWD = C3M0075120D FWD = (- - - -) C4D10120A L = 157 H 1.4 ETotal Switching Loss (mJ) 1.6 Figure 28. Switching Times Definition 175 Test Circuit Schematic Figure 29. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M0075120D Rev. A, 02-2019 Package Dimensions POS Package TO-247-3 A T V U W Pinout Information: * * * Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Recommended Solder Pad Layout TO-247-3 9 C3M0075120D Rev. A, 02-2019 Inches Millimeters Min Max Min Max .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC N 3 5.44 BSC 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 OP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9 11 9 11 U 9 11 9 11 V 2 8 2 8 W 2 8 2 8 Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links * * * SPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support Copyright (c) 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C3M0075120D Rev. A, 02-2019 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power