MOSFETs C/MOS & MULTIFET DEVICES COMPOSANTS: MOSF Cea MOSFETs C/MOS & MULTIFET BAUELEMENTE MULTIFET SWITCHES ELECTRICAL _ CHARACTERISTICS: Ta = 25 C No. Max. Power] , Lead of | Chen: | Dissipation! Nierdoss v pos Vosrhess Mes{en) | roster} J foss Neos} Hoss Pfofon)] Ce b Crash. Coss Vie Con- Part No. Chan-}|. nel | 25C Each olte olts Volts Volts | Ohms | nA nA nA mA F. ff PF pmho |P.18 fg. nals | Type | Gate mW Max Max Max Typ Typ Typ | Typ Typ. Typ tp yp]. Typ Typ | | P.197 P. $* MEM 780P 4 N 150 +12 +12 +30 1.0** 20 2.0 2.0 1.0 70 0.5 | 0.3) .05]) 12,000 | 12] 25 *MEM 780D 4 N 150 +12 +12 +30 1.0** 20 2.0 2.0 1.0 70 0.5} 0.3} .05 | 12,000 ) 13} 25 *MEM 780F 4 N 150 +12 +12 +30 1.0** 20 2.0 2.0 1.0 70 0.5 | 0.3} .05 | 12,000 | 16] 25 {* MEM 851P 4 P 150 40 40 40 2.5 65 0.2 0.2 0.05) 25 2.0} 1.5) .05 3,500 | 12 | 26 *MEM 851D 4 P 150 40 40 40 2.5 65 0.2 0.2 0.05; 25 2.0 | 1.5] .05 3,500 | 13 | 26 *MEM 851F 4 P 150 40 40 40 ~2.5 65 0.2 0.2 0.05} 25 2.0] 1.5] .05 3,500 | 16 | 26 *MEM 8&53P 10 P 175 30 30 30 2.0 700 0.2 0.2 0.10) 20 1.54 1.0) .05 3,500 } 14) 31 *MEM 853D 10 P 175 30 30 30 | 2.0 100 | 0.2 0.2 0.10] 20 1.54 1.0] .05 3,500 | 15] 31 *MEM 853F 10 P 175 30 30 30 2.0 100 0.2 0.2 0.10} 20 1.5] 1.0] .05 3,500 | 17 | 31 f* MEM 855P 6 P 150 30 30 30 4.0 150 0.2 0.2 0.10 6.0! 3.0] 1.9] .05 2,500 | 12 | 27 MU-1-006 6 P 150 30 30 30 4.0 150 0.2 0.2 0.10 6.0} 3.0] 1.9} .05 2,500 | 12 | 27 *MEM 855D 6 Pp 150 30 30 30 -40 450 0.2 0.2 0.10 6.0) 30) 1.9) .05 2,500 | 13 | 27 *MEM 855F 6 P 150 30 30 30 40 150 0.2 0.2 0.10 6.0] 3.0] 1.9] .05 2,500 |} 16] 2 f* MEM 856P 6 P 50 80 80 80 4.0 700 0.05; 0.05] 0.05 3.0} 02] 0.2) .05 700 | 12 | 27 *MEM 856D 6 P 50 80 80 80 40 700 0.05; 0.05} 0.05 3.0} 0.2] 0.2]; .05 700 | 13 | 27 *MEM 856F 6 P 50 8&0 80 80 4.0 700 0.05 0.05 0.05 3.0} 021 0.2] .05 700 | 16 | 27 *MEM 857P 8 P 175 30 30 30 2.0 400 0.2 0.2 0.10} 20 1.5) 1.0) .05 3,500 | 14) 28 *MEM 857D 8 P 175 30 ~30 30 2.0 100 0.2 0.2 0.10] 20 15] 1.0] .05 3,500 | 15 | 28 *MEM 857F 8 P 175 30 30 30 2.0 100 0.2 0.2 0.10] 20 1.5] 1.0] .05 3,500 | 17 | 28 *MEM 859 3 P 250 30 30 30 2.0 100 0.2 0.2 0.10} 20 1.5] 1.0] .05 | 20,000 9] 29 MU-6-0103 3 P 250 30 30 30 2.0 100 0.2 0.2 0.10! 20 1.51 1.0! .05.! 20,000 9! 29 * Diode Protected Gate. ** Depletion unit, actually Vos(or). C/MOS QUAD BILATERAL SWITCHES SIGNAL INPUT TO. OUTPUT CONTROL. CHARACTERISTIC Sine Freq. Wave Atten. Input Max Lead Part No. Reap, |. Distor- Switch | Crogs- Coss Cer- (MHz) | Case | Con- Po Vin Ron 3 aB tlon Off tatk Ciss ta Vin rent ec ta Rep. P.18 fg. LW Volts ohms MHz % dB dB pF ns Volts nA pF ne Rate P.19 | P. MEM 4016P 04 +1.65 100 40 0.4 50 --50 8 8 1.5 0.1 7 15 13 12 30 MEM 4016D 0.1 +1.65 100 40 0.4 50 50 8 8 15 0.1 7 15 43 13 30 MEM 4016F 0.1 +1.5 100 40 0.4 50 50 8 8 1.5 0.1 7 15 13 16 30 MEM 4016S 0.1 +15 100 40 0.4 50 50 8 8 1.5 0.1 7 16 13 13A 30 C/MOS DUAL PAIR PLUS INVERTER STATIC ELECTRICAL CHRST. DYNAMIC ELECT. CHRST. . INDIV. P &N MOS DEVICES 7 NOISE PROPAGAT.: | TRANSITION OUTPUT LEVEL IMMUNITY |. DELAY TIME Yn Vou Vou {umho) Case Po Max Miia ba Cin Vin. Van: - ftaGorr): | talon) t te Vien Vfea)ose see Part No. nw Valts Volta pA pF {| Volts | Volts | ons ne ns ns Volts N-MOS P-MOS olts P19 MEM 4007P 2.5 -01 4.99 10 5 2.25 2.25 18 16 12 12 +15 +000 500 #15 12 MEM 4007D 2.5 .01 4.99 10 5 2.25 2.25 18 16 12 12 +15 1000 500 #16 13 MEM 4007F 25 OF 4.99 10 5 2.25 2.25 18 16 12 12 15 1000 500 +15 16 MEM 4007S 25 01 4.99 10 5 2.25 | 2.25 18 16 12 12 +15 1000 500 15 13A C/MOS QUAD 2-INPUT POSITIVE LOGIC NAND GATE MEM 4011P 10.0 01 9.99 10 5 2.25) 2.25 25 16 30 30 1.5 _ _ 15 12 MEM 4011D 4.0 .01 9.99 10 5 2.25) 2,25 25 15 30 30 15 _ 15 13 MEM 4011F 4.0 01 9.99 10 5 2.25 | 2.25 25 15 30 30 1.5 _ 15 16 MEM 4011S 4.0 .01 9.99 10 5 2.25 | 2.25 25 15 30 30 16 _ 15 183A C/MOS TWO PHASE CLOCK GENERATOR MEM 4950P 25m} 14.95 0.1 _ _ _ 250 250 20 20 _ _ 15 12 MEM 4950D 25m) 14.95 -0.1 _ _ _ 250 250 20 20 _ _ 18 13 MEM 4950F 2.5m 14.95 0.1 _ _ _ _ 250 250 20 20 _ _ _ 15 16 C/MOS QUAD MULTIFET /MULTIPLEX DRIVER (TTL COMPATIBLE) Output. Current lo(mA) Output Input Voltage Pulse Part No. Po Cin Co Output Output Level Ampid a(oe) tafori) tr tr Case mW pF pF High Low Volts Volts ns ns ns ns P.19 MEM 4900P 25 6 8 5 12 215 +3 180 180 30 30 12 MEM 4900D 2.5 6 8 5 12 415 +3 180 180 30 30 13 MEM 4900F 2.5 6 8 5 12 15 +3 180 180 30 30 16 MEM 4900S 25 6 8 5 12 +15 +3 180 180 30 30 138A t Preferred type. Available from stock. # Type preferable. Disponible au magasin. # Vorzugstyp. Ab Lager lieferbar. 17