SIEMENS FEATURES Current Transfer Ratio at lp=10 mA ILD/Q1, 20% Min. ILD/Q2, 100% Min. ILD/Q5, 50% Min. High Collector-Emitter Voltage ILD/Q1: BVcE9=50 V ILD/Q2, ILD/Q5: BVcEQ=70 V Field-Effect Stable by TRansparent lOn Shield (TRIOS) Isolation Test Voltage, 5300 VACrms Underwriters Lab File #E52744 VDE 0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Reverse Voltage Forward Current SUPQO CUITOIt oo... eeeeeeeeeeeeeneeeeeneeeeeneereneees Power Dissipation Derate Linearly from 25C .......cceeeseenees 1.3 mW/C Detector Collector-Emitter Reverse Voltage ILD/O1 ooeeeeeeceeeceeeeeeceeeeee eee eeaeeeeeeseeesaeeeeeeeaes 50V ILD/Q2, ILD/Q5 0... eeceeeeeeeceeeeeeeeeeneeeeeeeeeeeaees 70V Collector Current 0.0... ee eeeseeeeeeeeeeeeeesnreeeeees 50 mA Collector Current (t<1 MS)... eeeeeeeeeeees 400 mA Power Dissipation............:ceesceesseeesneeeeees 200 mW Derate Linearly from 25C... eeeeeeeeee 2.6 mW Package Isolation Test Voltage (between emitter and detector referred to standard climate 23C/50%RH, DIN 50014) ooo ceeeteeeeeeeeeeaes 5300 VACams CHECD AGS ooo... eeeeeeeeeeeenteeeeeeeeeeneeeeeateraes min. 7 mm CIOALANCE oo... eeeeeeeeeeeenneeeeeeeeeeneeeenaeeeees min. 7mm Isolation Resistance Vi9g= 500 V, Ty=25C vececcecsccsseesteeseeens Rig=10'7 Vi9g= 500 V, Ty= 100C weececcessecsteeseeees Rig= 10110 Package Power Dissipation ............... 250 mW Derate Linearly from 25C... eee 3.3 MWC Storage Temperature... Operating Temperature.............. 40C to +100C Junction Temperature... eeceesseeeeeeeeseeeeees 100C Soldering Temperature (2 mm from case bottom) DUAL CHANNEL ILD1/2/5 QUAD CHANNEL ILQ1/2/5 PHOTOTRANSISTOR OPTOCOUPLER Dual Channel Dimensions in inches (mm) oy os oy fs Pin One I.D. | Y Anode ac Ee Emitter ~<_ 268 {648} Cathode [2] | 7 | Collector Cathode [3 | 6 | Collector Lager a Kee 390 (9.9 4] fe : 9.6 1. .305 Typ. ; (7.75) Typ. \ \\ 135 @ 43) eT 115 (2.92 yp. 10 re] 9-9 022 (.56 2 -018 (.46 -012 (.30 8 8 (99. Quad Channel oh pt py my 1D. anode iy Ze Emitter / Cathode [2] HS] Collector q Cathode Bk i 4] Collector | 268 (6.81 (255 te ah Anode [4] H3] Emitter | Anode a 12] Emitter elusel focl (oet oS Cathode [6] ~K Collector .780 (20.07) Cathode ue HO] Collector TE (N97T) Anode oe ~K Emitter 045 (1.14) 150 (3.81) 3057; | .030 (.76) .130 (3 30) (7. 75) aie T | | | | | | | | | I] 135 (3.43) 115 (2.92) 4 Typ. 10 Ls ie 040 (1.02) 3-9 030 (76 ) ge 022 (56) | 3 012 (.30)_ | 018 (46 (48) 100 (2.54) Typ. 008 (20) DESCRIPTION The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD/Q1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate trou- blesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applica- tions such as CRT modulation. The ILD1/2/5 has two isolated channels in a single DIP package and the ILQ1/2/5 has four isolated channels per pack- age. See Appnote 45, How to Use Optocoupler Normalized Curves.Characteristics Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage Ve 1.25 1.65 Vv |-=60 mA Reverse Current IR 0.01 10 HA VpR=6 V Capacitance Co 25 pF Vp=0 V, f= 1 MHz Thermal Resistance, Junction to Lead Pry 750 C/W Detector Capacitance Cee 6.8 pF Vog=5 V, f= 1 MHz Leakage Current, Collector-Emitter IcEO 5 50 nA Vog=10 V Saturation Voltage, Collector-Emitter VoeEsaT 0.25 0.4 Iop=1 mA, Ip=20 WA DC Forward Current Gain HFE 200 650 1800 Veog= 10 V, Ip=20 pA Saturated DC Forward Current Gain HFEgat 120 400 600 Vog= 0.4 V, Ip=20 WA Thermal Resistance, Junction to Lead Pry 500 C/W Package Transfer Characteristics (Each Channel) Symbol Min. Typ. Max. Unit Condition ILD/Q1 Saturated Current Transfer Ratio (Collector-Emitter) | CTReesar 75 % lp=10 mA, Vop=0.4 V Current Transfer Ratio (Collector-Emitter) CTRee 20 90 300 % lp=10 mA, Vop=10 V ILD/Q2 Saturated Current Transfer Ratio (Collector-Emitter) | CTReesar 170 % lp=10 mA, Vop=0.4 V Current Transfer Ratio (Collector-Emitter) CTRee 100 200 500 % lp=10 mA, Vop=10 V ILD/Q5 Saturated Current Transfer Ratio (Collector-Emitter) | CTReesar 100 % lp=10 mA, Vop=0.4 V Current Transfer Ratio (Collector-Emitter) CTRee 50 130 400 % lp=10 mA, Vee-=10 V Isolation and Insulation Common Mode Rejection, Output High Cun 5000 Vius Vom=50 Vp.p, RLp=1 kQ, |-=O mA Common Mode Rejection, Output Low Cu 5000 Vius Voy=50 Vp_p, Rp=1 kQ, |= 10 mA Common Mode Coupling Capacitance Com 0.01 pF Package Capacitance Cio 0.8 pF Vio=0 V, f=1 MHz ILD/Q1/2/5Typical Switching Times ; oo. _ Characteristic | ILD/Q1 ILD/Q2 ILD/Q5 Unit | Condition Figure 1. Non-saturated switching timing I-=20 mA | Ip=5 mA | Ip=10 mA Voc=5 V Delay, tp 0.8 1.7 1.7 us Ip=10 mAW 2 y Rise time, ta | 1.9 2.6 26 us O F=10 KHz, = Storage, t 0.2 0.4 0.4 Voe=5 V DF=50% RiE%eO omee's MS] Rp=75 ko - Fall Time, tr 1.4 2.2 2.2 us | 90% of Vpp ; oo Propagation 0.7 1.2 1.1 us Figure 2. Non-saturated switching timing H-L, toy I; Propagation 1.4 2.3 2.5 us L-H, tpiy = Characteristic | ILD/Q1 ILD/Q2 ILD/Q5 Unit | Condition Ip=20 mA | Ip=5 mA | Ip=10 mA P< toy] Delay, tp 0.8 1 1.7 ps v. Ly tee 0 4 Rise time, tg 1.2 2 7 ps St t 7.4 5.4 4.6 Voe=0.4 V 50% orage, ts . . . us R= pe Fall Time, te 7.6 13.5 20 ys Viq=1.5 V ty | tr te Propagation | 1.6 5.4 2.6 us H-L, teu. Figure 3. Saturated switching timing nee 8.6 74 72 Hs F=10 KHz, Vane V DF=50% ce Figure 5. Normalized non-saturated and saturated RL CTR at T,=25C versus LED current Ip=10 mA Vv 1.4 ra > 1.3 + O12 - = S14 Figure 4. Saturated switching timing = 10 iano 5 0.9 uw ~ a = 100C 708 0.7 A 1 10 100 If - Forward Current - mA _, 'o- Figure 6. Normalized non-saturated and saturated tr CTR at T,=25C versus LED current Yo - 15 - et ply 2 . Normalized to: Ang Vce = 10V, IFi= 10mA Vol 5V i Ta = 25C TH Ee CTRee(sat) Ve = 0.4V | O 1.0 3 lh. >| < i te \N teu s = A | 05 uy + | NCTR(SAT) fe ~@ INCTR EE 5 0.0 us far 4 1 10 100 IF - LED Current - mA ILD/Q1/2/5Figure 7. Normalized non-saturated and saturated CTR at T,=50C versus LED current 1.5 . Normalized t: g Vee = 10V,3IF = 10mA, Ta = 25C & CTRee(satk Vce = 0.4V Es of O Ta = 50C 3 rT a fo o AN S E fxm 205 i LL z & =NCTRISAT) FE @ INCTR Oo 0.0 1 ou A 100 Figure 8. Normalized non-saturated and saturated 1 10 IF - LED Current - mA CTR at Tg=70C versus LED current 1.5 Normalized to: Vce = 10V,31F = 10mA Ta = 25C CTRee(sat)iVce = 0.4V 0.5 CTR - Normalized CTR Factor 70C NCTR NCTR(SAT) 0.0 Figure 9. Normalized non-saturated and saturated j IF - LED Current - 10 100 mA CTR at Ta=85C versus LED current 15 1.0 0.5 NCTR - Normalized CTR 0.0 A Normalizedito: CTRee(sat);Vce = 0.4V Vce = 10V, JF = 10mA, Ta = 25C oe = NCITR(SAT) ~~ NCTR 85C 1 10 100 IF - LED Current - mA Figure 10. Collector-emitter current versus tempera- 35 30 25 20 15 10 5 0 Ice - Collector Current - mA 0 10 ture and LED current 20 3 0 40 50 IF-LED Current - mA 60 Figure 11. Collector-emitter leakage current versus temperature 105 Iceo - Collector-Emitter - nA o 8s 86 8 8 8 A oO + NO wo ms nm -20 0 20 40 60 80 Ta- Ambient Temperature - C 100 Figure 12. Propagation delay versus collector load resistor 1000 F F Ta =25C,}IF =10mA 1 Veco = 5ViVth = 1.5V 7 tPLH f 4. oO oO \ on << 7 tPHL tPLH - Propagation Low-High - ps an 3 1 . 1 RL- Collector Load Resistor - KQ 10 100 m oa tPHL - Propagation High-Low - ps t4 | 2.0 1.5 5-4 ILD/Q1/2/5