APT1001R1BN - Advanced Power Technology

Symbol

VDSS

IDM

VGS

TJ,TSTG

Parameter

Drain-Source Voltage

Continuous Drain Current @ TC = 25°C

Pulsed Drain Current 1

Gate-Source Voltage

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

(VGS = 0V, ID = 250 µA)

On State Drain Current 2

(VDS > I D(ON) x RDS(ON) Max, VGS = 10V)

Drain-Source On-State Resistance 2

(VGS = 10V, 0.5 ID [Cont.])

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

THERMAL CHARACTERISTICS

Symbol

RθJC

RθJA

Characteristic

Junction to Case

Junction to Ambient

MIN TYP MAX

0.40

UNIT

°C/W

Symbol

BVDSS

ID(ON)

RDS(ON)

IDSS

IGSS

VGS(TH)

MIN TYP MAX

APT1001R1BN 1000

APT1001R3BN 1000

APT1001R1BN 10.5

APT1001R3BN 10

APT1001R1BN 1.10

APT1001R3BN 1.30

250

1000

±100

UNIT

Volts

Amps

Ohms

µA

Volts

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

APT APT

1001RBN 1001R3BN

1000 1000

10.5 10

42 40

±30

310

2.48

-55 to 150

300

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT1001R1BN 1000V 10.5A 1.10Ω

APT1001R3BN 1000V 10.0A 1.30Ω

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS

POWER MOS IV

050-0007 Rev C

TO-247

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 579215 15 FAX: (33) 5 5647 97 61

MIN TYP MAX

310

APT1001R1BN 42

APT1001R3BN 40

MIN TYP MAX

APT1001R1BN 10.5

APT1001R3BN 10

APT1001R1BN 42

APT1001R3BN 40

1.3

636 1200

4.5 11

DYNAMIC CHARACTERISTICS

Symbol

Ciss

Coss

Crss

Qgs

Qgd

td(on)

td(off)

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

MIN TYP MAX

2460 2950

360 500

105 160

90 130

9.3 14

47 70

15 30

16 32

64 95

24 48

UNIT

APT1001R1/1001R3BN

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions / Part Number

Continuous Source Current

(Body Diode)

Pulsed Source Current 1

(Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)

Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

ISM

VSD

t rr

Q rr

UNIT

Amps

Volts

µC

Test Conditions / Part Number

VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.

IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

Symbol

SOA1

SOA2

ILM

Characteristic

Safe Operating Area

Inductive Current Clamped

UNIT

Watts

Amps

SAFE OPERATING AREA CHARACTERISTICS

1Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-0007 Rev C

ZθJC, THERMAL IMPEDANCE (°C/W)

10-5 10-4 10-3 10-2 10-1 1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

1.0

0.5

0.1

0.05

0.01

0.005

0.001

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D=0.5

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

PDM

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VGS(TH), THRESHOLD VOLTAGE BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

050-0007 Rev C

2.5

2.0

1.5

1.0

0.5

0.0

0 6 12 18 24 30

0 100 200 300 400 500

TJ = 25°C

2µ SEC. PULSE TEST

NORMALIZED TO

VGS = 10V @ 0.5 ID [Cont.]

-50 -25 0 25 50 75 100 125 150

0 2 4 6 8

0 4 8 12 16 20

DS D DS

V > I (ON) x R (ON)MAX.

230µ SEC. PULSE TEST

ID = 0.5 ID [Cont.]

VGS = 10V

APT1001R1/1001R3BN

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

0.9

0.8

0.7

1.4

1.2

1.0

0.8

0.6

0.4

TJ = -55°C

TJ = +125°C

TJ = +25°C

TJ = -55°CTJ = +25°C

TJ = +125°C

4.5V

5.5V

VGS=10V 6V

4.5V

5.5V

VGS=10V

VGS=20V

VGS=10V

025 50 75 100 125 150

APT1001R3BN

APT1001R1BN

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

TO-247AD Package Outline

050-0007 Rev C

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Source

Gate

Dimensions in Millimeters and (Inches)

Drain

2-Plcs.

0 .5 1.0 1.5 2.0

0 10 20 30 40 50

0 40 80 120 160 200

10,000

1,000

100

Ciss

Coss

Crss

TJ = +150°C TJ = +25°C

VDS=200V

VDS=100V

VDS=500V

APT1001R1/1001R3BN

ID = ID [Cont.]

1 5 10 50 100 1000

TC =+25°C

TJ =+150°C

SINGLE PULSE

OPERATION HERE

LIMITED BY RDS (ON)

1mS

10mS

100mS

100µS

10µS

APT1001R1BN

APT1001R3BN

APT1001R1BN

APT1001R3BN

APT1001R1/1001R3BN