D TO-247 G APT1001R1BN 1000V 10.5A 1.10 S POWER MOS IV APT1001R3BN 1000V 10.0A 1.30 (R) N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C APT 1001RBN APT 1001R3BN UNIT 1000 1000 Volts 10.5 10 42 40 Amps 1 IDM Pulsed Drain Current VGS Gate-Source Voltage 30 Volts Total Power Dissipation @ TC = 25C 310 Watts Linear Derating Factor 2.48 W/C PD TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current APT1001R1BN 1000 APT1001R3BN 1000 APT1001R1BN 10.5 APT1001R3BN 10 TYP MAX UNIT Volts 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance MIN 2 Amps APT1001R1BN 1.10 APT1001R3BN 1.30 Ohms (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts MAX UNIT Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 THERMAL CHARACTERISTICS Characteristic RJC Junction to Case RJA Junction to Ambient MIN TYP 0.40 40 C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. 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Kennedy Bat B4 Parc Cadera Nord 050-0007 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT1001R1/1001R3BN Characteristic MIN Test Conditions TYP MAX Ciss Input Capacitance VGS = 0V 2460 2950 Coss Output Capacitance VDS = 25V 360 500 Crss Reverse Transfer Capacitance f = 1 MHz 105 160 Qg Total Gate Charge Qgs 3 VGS = 10V 90 130 VDD = 0.5 VDSS 9.3 14 ID = ID [Cont.] @ 25C 47 70 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 15 30 VDD = 0.5 VDSS 16 32 ID = ID [Cont.] @ 25C 64 95 RG = 1.8 24 48 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions / Part Number Symbol Continuous Source Current (Body Diode) IS ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage 2 MIN APT1001R1BN 10.5 APT1001R3BN 10 APT1001R1BN 42 APT1001R3BN 40 (VGS = 0V, IS = -ID [Cont.]) 1.3 UNIT Amps Volts t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) 636 1200 ns Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) 4.5 11 C TYP MAX UNIT SAFE OPERATING AREA CHARACTERISTICS Symbol Characteristic Test Conditions / Part Number MIN SOA1 Safe Operating Area VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. 310 SOA2 Safe Operating Area IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. 310 ILM Inductive Current Clamped APT1001R1BN 42 APT1001R3BN 40 Watts Amps 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 0.1 0.05 0.2 0.1 0.05 Note: 0.02 0.01 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-0007 Rev C 1.0 0.01 0.005 t2 SINGLE PULSE 0.001 10-5 t1 10-4 Duty Factor D = t1/t 2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT1001R1/1001R3BN V 16 =10V GS 6V ID, DRAIN CURRENT (AMPERES) 12 5.5V 8 5V 4 4.5V T = +125C J > I (ON) x R (ON)MAX. DS D DS 230 SEC. PULSE TEST 12 8 T = +125C J T = -55C J T = +25C J 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 12 10 APT1001R1BN 8 APT1001R3BN 6 4 2 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE T = +25C J 2.5 8 5V 4 4.5V 2.5 T = 25C J 2 SEC. PULSE TEST NORMALIZED TO 2.0 V GS = 10V @ 0.5 I [Cont.] D V 1.5 =10V GS V =20V GS 1.0 0.5 0.0 0 6 12 18 24 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) T = -55C J 0 6V 5.5V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 20 4 12 0 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS V =10V GS 4V 4V 0 16 V 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-0007 Rev C ID, DRAIN CURRENT (AMPERES) 16 APT1001R1/1001R3BN 60 10,000 APT1001R1BN 10S C OPERATION HERE LIMITED BY R (ON) DS iss 100S APT1001R1BN 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) APT1001R3BN APT1001R3BN 1mS 10mS 1 T C =+25C 100mS =+150C J SINGLE PULSE 1,000 C oss C rss 100 T DC APT1001R1/1001R3BN 10 .1 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1 5 10 50 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D 16 V V 12 =100V DS =200V DS V 8 =500V DS 4 0 100 50 20 T = +150C J T = +25C J 10 5 2 1 0 .5 1.0 1.5 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE TO-247AD Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain 050-0007 Rev C Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches)