Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA= 25_C TA= 70_C Pulsed Drain Currenta IS TA= 25_C Power Dissipationa TA= 70_C Operating Junction and Storage Temperature Range PD 2.1 1.9 IDM Continuous Source Current (Diode Conduction)a V 2.4 ID Unit 1.7 A 10 0.94 0.6 0.9 0.7 0.57 0.46 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t 5 sec. Maximum Junction-to-Ambienta Steady State RthJA Typical Maximum 115 140 140 175 Unit _ _C/W Notes a. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71831 S-20617--Rev. B, 29-Apr-02 www.vishay.com 1 Si2302ADS New Product Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = 10 mA 20 VGS(th) VDS = VGS, ID = 50 mA 0.65 0.95 1.2 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 VDS = 20 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55_C 10 On-State Drain Currenta ID(on) Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage rDS(on) VDS w 5 V, VGS = 4.5 V 6 VDS w 5 V, VGS = 2.5 V 4 V nA m mA A VGS = 4.5 V, ID = 3.6 A 0.045 0.085 VGS = 2.5 V, ID = 3.1 A 0.070 0.115 gfs VDS = 5 V, ID = 3.6 A 8 VSD IS = 0.94 A, VGS = 0 V 0.76 1.2 4.0 10 W S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.5 Input Capacitance Ciss 300 Output Capacitance Coss Reverse Transfer Capacitance Crss 80 td(on) 7 15 55 80 16 60 10 25 VDS = 10 V, VGS = 4.5 V, ID = 3.6 A VDS = 10 V, VGS = 0 V, f = 1 MHz 0.65 nC 120 pF Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time tr td(off) tf VDD = 10 V, RL = 5.5 W ID ^ 3.6 A, VGEN = 4.5 V, RG = 6 W ns Notes a. Pulse test: PW v300 ms duty cycle v2%.. www.vishay.com 2 Document Number: 71831 S-20617--Rev. B, 29-Apr-02 Si2302ADS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 Transfer Characteristics 10 VGS = 5 thru 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 2V 4 2 4 TC = 125_C 2 1.5 V 0, 0.5, 1 V 6 25_C -55_C 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 600 0.15 500 0.12 C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 1.5 0.09 VGS = 2.5 V 0.06 VGS = 4.5 V 0.03 400 Ciss 300 200 Coss 100 Crss 0.00 0 0 2 4 6 8 10 0 Gate Charge 1.8 1.6 4 r DS(on)- On-Resistance ( W ) (Normalized) V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.6 A 3 2 1 0 0 1 2 3 Qg - Total Gate Charge (nC) Document Number: 71831 S-20617--Rev. B, 29-Apr-02 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 5 4 4 5 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2302ADS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C 1 TJ = 25_C 0.1 0.001 0.16 0.12 ID = 3.6 A 0.08 0.04 0.00 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.3 10 0.2 8 ID = 250 mA -0.0 Power (W) VGS(th) Variance (V) 0.1 -0.1 -0.2 6 TC = 25_C Single Pulse 4 -0.3 2 -0.4 -0.5 -50 0 0 50 100 150 0.01 0.10 TJ - Temperature (_C) 1.00 10.00 100.00 1000.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71831 S-20617--Rev. B, 29-Apr-02