Si2302ADS
Vishay Siliconix
New Product
Document Number: 71831
S-20617—Rev. B, 29-Apr-02 www.vishay.com
1
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.085 @ V GS = 4.5 V 2.4
20 0.115 @ VGS = 2.5 V 2.0
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2302DS (2A)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Limit Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS "8V
_TA= 25_C 2.4 2.1
Continuous Drain Current (TJ = 150_C)aTA= 70_CID1.9 1.7
Pulsed Drain CurrentaIDM 10 A
Continuous Source Current (Diode Conduction)aIS0.94 0.6
TA= 25_C 0.9 0.7
Power DissipationaTA= 70_CPD0.57 0.46 W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t 5 sec. 115 140
_
Maximum Junction-to-AmbientaSteady State RthJA 140 175
_C/W
Notes
a. Surface Mounted on FR4 Board.
For SPICE model information via the W orldwide Web: http://www.vishay.com/www/product/spice.htm
Si2302ADS
Vishay Siliconix New Product
www.vishay.com
2Document Number: 71831
S-20617—Rev. B, 29-Apr-02
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA 20
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 50 mA 0.65 0.95 1.2 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA
VDS = 20 V, VGS = 0 V 1
m
Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 55_C 10 mA
VDS w 5 V, VGS = 4.5 V 6
On-State Drain CurrentaID(on) VDS w 5 V, VGS = 2.5 V 4A
VGS = 4.5 V, ID = 3.6 A 0.045 0.085
W
Drain-Source On-ResistancearDS(on) VGS = 2.5 V, ID = 3.1 A 0.070 0.115 W
Forward Transconductanceagfs VDS = 5 V, ID = 3.6 A 8 S
Diode Forward Voltage VSD IS = 0.94 A, VGS = 0 V 0.76 1.2 V
Dynamic
Total Gate Charge Qg4.0 10
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 0.65 nC
Gate-Drain Charge Qgd 1.5
Input Capacitance Ciss 300
Output Capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 120 pF
Reverse Transfer Capacitance Crss 80
Switching
Turn-On Delay Time td(on) 7 15
Rise Time trVDD = 10 V, RL = 5.5 W55 80
Turn-Off Delay Time td(off)
VDD = 10 V, RL = 5.5
W
ID ^ 3.6 A, VGEN = 4.5 V, RG = 6 W16 60 ns
Fall-Time tf10 25
Notes
a. Pulse test: PW v300 ms duty cycle v2%..
Si2302ADS
Vishay Siliconix
New Product
Document Number: 71831
S-20617—Rev. B, 29-Apr-02 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5
On-Resistance vs. Drain Current
Output Characteristics Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)ID
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)ID
0
2
4
6
8
10
012345
TC = 125_C
–55_C
0, 0.5, 1 V
VGS = 5 thru 2.5 V
1.5 V
2 V
0
100
200
300
400
500
600
048121620
0.6
0.8
1.0
1.2
1.4
1.6
1.8
–50 0 50 100 150
0
1
2
3
4
5
012345
0.00
0.03
0.06
0.09
0.12
0.15
0246810
Gate Charge
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
VGS
Crss
Coss
Ciss
VDS = 10 V
ID = 3.6 A
– On-Resistance (rDS(on) W)
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 3.6 A
TJ – Junction Temperature (_C)
(Normalized)
– On-Resistance (rDS(on) W)
VGS = 2.5 V
VGS = 4.5 V
25_C
Si2302ADS
Vishay Siliconix New Product
www.vishay.com
4Document Number: 71831
S-20617—Rev. B, 29-Apr-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Power (W)
–0.5
–0.4
–0.3
–0.2
–0.1
–0.0
0.1
0.2
0.3
–50 0 50 100 150
0.00
0.04
0.08
0.12
0.16
0.20
02468
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10–410–310–210–11
Normalized Ef fective Transient
Thermal Impedance
600
– On-Resistance (rDS(on) W)
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
– Source Current (A)IS
TJ – Temperature (_C)
Variance (V)VGS(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
ID = 3.6 A
ID = 250 mA
10
0.001
10
0.01 0.10 1.00 10.00 100.00 1000.00
Time (sec)
10
8
4
0
2
6
TJ = 25_C
TJ = 150_C
1
0.1
TC = 25_C
Single Pulse
100
