KEEL ssemiconpucror TIP112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. 5 a 11 FEATURES = Lea - | * High DC Current Gain. | an Din | MILLIMETERS > hpp=l000(Min.), @Vcu=4V, Ic=1A. ; = sa * Low Collector-Emitter Saturation Voltage. | c 0.80 * Complementary to TIP117. - | | | 7 ; ea yy. =f as0e080 H 5.60 MAX MAXIMUM RATINGS (Ta=25C) ce |e bw K 0.50 CHARACTERISTIC SYMBOL | RATING | UNIT = a K } [| N 4.70 MAX Collector-Base Voltage Vero 100 Vv ibe ty = 0 2.60 Ly Li Le P 1.50 MAX Collector-Emitter Voltage Vico 100 Vv 1. BASE ; ysic0m 2. COLLECTOR (HEAT SINK) s 8.00+0.20 Emitter-Base Voltage Viso 5 V 5 ewrrer r 2.90 MAX DC Ic 2 Collector Current A Pulse Tcp A TO220AB Base Current DC Ip 50 mA mp. ory C Collector Power Pa=25'C Pe 2 Ww Oo Dissipation Tce=25C 50 Junction Temperature Tj 150 Cc B Storage Temperature Range Tstg -65 ~ 150 Cc ~\ A Ri Re MN 10kO 50.6k0 O E ELECTRICAL CHARACTERISTICS (Ta=25T) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. | MAX. | UNIT Icro Vcr=50V, In=0 - - ) Collector Cut-off Current mA Icno Vcn=100V, In=0 - - 1 Emitter Cut-off Current Tego Vip=5V, Ic=0 - - 2 mA Vcr=4V, Ic=l1A 1000 - - DC Current Gain hee Vcr=4V, [c=2A 500 - - Collector-Emitter Sustaining Voltage Venous) | Ic=30mA, Ip=0 100 - - Collector-Emitter Saturation Voltage Venrtsat) Tc=2A, In=8mA - - 2.5 Base-Emitter On Voltage VBRION) Vcr=4V, [c=2A - - 2.8 Collector Output Capacitance Cob Vep=10V, Ie=0, f-0.1MHz - - 100 pF 1999. 11. 16 Revision No : 1 KEC 1/2TIP112 Ic Vcr hre Ic = 2.0 100K = 30K ~ 1.6 a & 2, 5 10K B 1.2 o s E 300 o 25 0.8 3 S a= 100 5 5 0.4 oO 5 . oO 30 3 a oO 0 10 1 2 3 4 5 0.01 0.1 1 10 COLLECTOR-EMITTER VOLTAGE Vop (Vv) COLLECTOR CURRENT Ic (A) VBE(sat) VCE(sat) Ic Cob Vos 100 I/Ip=500 500 f=0.1MHz fa 30 & 300 a= ~ > 10 2 100 > 8 So 50 ze 3 30 os Z 3c 1 e 10 pe 2 5 aH 0.3 3 ns 3 0.1 1 0.01 0.1 1 10 0.01 0.1 1 10 100 COLLECTOR-BASE VOLTAGE Vcp (V) COLLECTOR CURRENT Ic (A) SAFE OPERATING AREA Pp - Ta > 10 I T T I TTT ~~ | a Ee = ! [ T [ttt ~ 5 | Ig MAX(PULSED) X a ~ 8 Net Zz E NS, Sel = 3 DC OPERATION NYG N Tc=25C fi B 1b NL n oO \ B eos N A . = >< SINGLE NONREPETITIVE N Ei oO 0.3 PULSE Tc=25C \N 4 CURVES MUST BE DERATED A, 8 LINEARLY WITH INCREASE IN 0 50 100 150 200 O14 TEMPERATURE CASE TEMPERATURE Ta (C) 4 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE Vcg (V) 1999. 11. 16 Revision No : 1 KEC 2/2