© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 2
1Publication Order Number:
NSR0620P2/D
NSR0620P2T5G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dcdc
converter, clamping and protection applications in portable devices.
NSR0620P2 in a SOD923 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
Very Low Forward Voltage Drop 350 mV @ 100 mA
Low Reverse Current 2.0 mA @ 10 V
Continuous Forward Current 500 mA
Power Dissipation with Minimum Trace 190 mW
Very High Switching Speed 4.0 ns @ 10 mA
Low Capacitance 12 pF @ 1.0 V
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dcdc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR20 Vdc
Forward Continuous Current (DC) IF500 mA
NonRepetitive Peak Forward Surge
Current
IFSM 1.0 A
ESD Rating: Human Body Model
Machine Model
ESD Class 3B
Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
20 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
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Device Package Shipping
ORDERING INFORMATION
NSR0620P2T5G SOD923
(PbFree)
2 mm Pitch
8000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD923
CASE 514AB
PLASTIC
F = Specific Device Code
M = Month Code
G= PbFree Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM
MG
G
1
2
12
F
NSR0620P2T5G
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
520
190
°C/W
mW
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
175
570
°C/W
mW
Junction and Storage Temperature Range TJ, Tstg 55 to +125 °C
1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06” thick singlesided. Operating to steady state.
2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06” thick singlesided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 20 V)
IR2.0
9.0
10
mA
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 500 mA)
VF270
350
480
310
390
520
mV
Total Capacitance
(VR = 1.0 V, f = 1 MHz) CT 12 pF
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr 4.0 ns
1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
3. Pulse Generator transition time << trr.
4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
5. tp » trr
RL = 50 W
Current
Transformer
DUT
750 mH
0.1 mF
50 W Output
Pulse
Generator
trtp
10%
90%
IF
IRM
trr
iR(REC) = 1 mA
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
IF
Pulse Generator
Output
Figure 1. Recovery Time Equivalent Test Circuit
50 W Input
Oscilloscope
0.1 mF
0 V
VR
DC Current
Source
Adjust for IRM
+
NSR0620P2T5G
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3
0.1
1
10
100
1000
0 0.1 0.2 0.3 0.4 0.5 0.6
VF
, FORWARD VOLTAGE (V)
Figure 2.
25°C
85°C
125°C
40°C
IF
, FORWARD CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 3.
IR, REVERSE CURRENT (mA)
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
0 2 4 6 8 10 12 14 16 18 20
40°C
25°C
85°C
125°C
2
4
6
8
10
12
14
16
18
20
22
02468101214161820
VR, REVERSE VOLTAGE (V)
Figure 4.
Ct, TOTAL CAPACITANCE (pF)
NSR0620P2T5G
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4
PACKAGE DIMENSIONS
SOD923
CASE 514AB
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM MIN NOM MAX
MILLIMETERS
A0.34 0.37 0.40
b0.15 0.20 0.25
c0.07 0.12 0.17
D0.75 0.80 0.85
E0.55 0.60 0.65
0.95 1.00 1.05
L0.19 REF
HE
0.013 0.015 0.016
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.007 REF
MIN NOM MAX
INCHES
D
E
c
A
Y
X
21
DIMENSIONS: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
See Application Note AND8455/D for more mounting details
1.20
2X
0.25
2X
0.36
PACKAGE
OUTLINE
b2X
0.08 XY TOP VIEW
HE
SIDE VIEW
2X
BOTTOM VIEW
L2
L
2X
L2 0.05 0.10 0.15 0.002 0.004 0.006
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NSR0620P2/D
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