APT10035JFLL 1000V POWER MOS 7 R 25A FREDFET 0.370 S S (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg Symbol VDSS ID SO "UL Recognized" ISOTOP (R) * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G D G S All Ratings: TC = 25C unless otherwise specified. Parameter APT10035JFLL UNIT 1000 Volts Drain-Source Voltage 25 Continuous Drain Current @ T C = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ T C = 25C 520 Watts Linear Derating Factor 4.16 W/C VGSM PD TJ,TSTG 100 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 25 (Repetitive and Non-Repetitive) EAR Volts 1 Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (V GS = 0V, I D = 250A) 1000 Volts 25 Amps On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 14A) TYP MAX 0.370 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 250 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (V GS = 30V, V DS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 2-2009 BVDSS Characteristic / Test Conditions 050-7036 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Test Conditions Input Capacitance f = 1 MHz Reverse Transfer Capacitance 3 VGS = 10V ID = 28A @ 25C Gate-Drain (" Miller ") Charge RESISTIVE SWITCHING Turn-on Delay Time VGS = 15V Rise Time VDD = 500V Turn-off Delay Time ID = 28A @ 25C Fall Time Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25C 6 IS ISM ns J 1423 VDD = 670V VGS = 15V 779 ID = 28A, RG = 5 Characteristic / Test Conditions nC 623 ID = 28A, RG = 5 INDUCTIVE SWITCHING @ 125C SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS pF 900 VDD = 670V, VGS = 15V 6 MIN TYP MAX 25 Continuous Source Current (Body Diode) Amps Pulsed Source Current (Body Diode) 100 VSD Diode Forward Voltage 2 1.3 Volts dv/ (VGS = 0V, I S = -25A) Peak Diode Recovery 18 V/ns dt dv/ dt 5 t rr Reverse Recovery Time (IS = -25A, di/dt = 100A/s) Tj = 25C 320 Tj = 125C 650 Q rr Reverse Recovery Charge (IS = -25A, di/dt = 100A/s) Tj = 25C 3.60 Tj = 125C 9.72 IRRM Peak Recovery Current (IS = -25A, di/dt = 100A/s) Tj = 25C 16.50 Tj = 125C 24.70 Symbol Characteristic RJC Junction to Case RJA Junction to Ambient MIN TYP Amps MAX 40 0.9 0.20 0.7 0.15 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 0.25 0.10 0.3 0.1 0 t1 t2 0.05 SINGLE PULSE 0.05 10-5 10-4 UNIT C/W 4 Starting T j = +25C, L = 9.60mH, R G = 25, Peak I L = 25A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID24A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 ns C 0.24 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 2-2009 UNIT 1 THERMAL CHARACTERISTICS 050-7036 Rev D UNIT 9 RG = 0.6 Turn-on Switching Energy MAX 160 186 24 122 12 10 36 VDD = 500V Gate-Source Charge APT10035JFLL 5185 881 VGS = 0V Eon Symbol TYP VDS = 25V Output Capacitance Total Gate Charge MIN Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves Power (Watts) 0.0651 0.123 0.0203F 0.173F 0.490F Case temperature ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( "C) 0.0528 APT10035JFLL 60 VGS =15,10 & 8V 50 7V 40 6.5V 30 6V 20 5.5V 10 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL VDS> I D (ON) x R DS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 70 60 50 40 30 TJ = +125C TJ = -55C 20 10 0 TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 20 15 10 5 0 25 GS 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 1.15 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7,BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 I = 14A D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 NORMALIZED TO = 10V @ 14A V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 2-2009 ID, DRAIN CURRENT (AMPERES) 25 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 050-7036 Rev D ID, DRAIN CURRENT (AMPERES) 80 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 10 1mS TC =+25C TJ =+150C SINGLE PULSE 10mS 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I = 28A D 12 VDS=200V VDS=500V 8 VDS=800V 4 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE C, CAPACITANCE (pF) Ciss 100S 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10,000 10 V G V DD G T = 125C J L = 100 H 80 60 40 tr 20 td(on) 20 10 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD 0 10 Eon G J L = 100 H EON includes diode reverse recovery. 1000 500 Eoff 4000 3000 Eon 2000 V 10 20 30 40 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT DD = 670V I = 28A D T = 125C J 1000 L = 100 H E ON includes Eoff 0 20 5000 T = 125 C 1500 30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT = 670V R = 5 2000 0 20 SWITCHING ENERGY ( J) 0 2500 0 tf J L = 100 H = 670V R = 5 100 = 670V = 5 T = 125 C 60 120 DD R tr and t f (ns) td(on) and t d(off) (ns) TJ =+25C td(off) 40 SWITCHING ENERGY (J) TJ =+150C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 140 2-2009 100 80 160 050-7036 Rev D Coss Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 180 0 1,000 100 IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 50 0 APT10035JFLL 20,000 100 diode reverse recovery. 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT10035JFLL Gate Voltage 10 % 90% T = 125 C J td(on) Gate Voltage t T = 125 C J d(off) tr Drain Current 90% 5% 10 % Drain Voltage 5% 90% Drain Voltage 10% tf Switching Energy Drain Current 0 Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT15DF120B V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign entspat pending. All Rights Reserved. 2-2009 r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7036 Rev D 7.8 (.307) 8.2 (.322)